Abstract:
A semiconductor chemical vapor deposition reactor includes a susceptor and a cover above the susceptor to reflect and radiate heat from the susceptor back onto the top surfaces of the wafers held on the susceptor, thereby minimizing temperature gradients on the wafers and reducing slip. The cover has an opening in the center through which process gases are injected, creating a Bernouli effect to draw the process gases between the cover and susceptor, where the process gases then deposit on the wafers secured thereon.