Alan J Carroll

US Patent:

7163596, Jan 16, 2007

Filed:

May 2, 2003

Appl. No.:

10/428284

Inventors:

Alan Frederick Carroll - Raleigh NC, US
Christopher John Roach - Apex NC, US

Assignee:

E. I. du Pont Nemours and Company - Wilmington DE

International Classification:

B32B 37/00

US Classification:

156155, 1563082, 1563096

Abstract:

This invention is directed to a process for the fabrication of features on a silicon wafer utilizing fibers or ribbons comprising organic polymer and inorganic material.

US Patent:

7282106, Oct 16, 2007

Filed:

Oct 18, 2004

Appl. No.:

10/968626

Inventors:

Alan Frederick Carroll - Raleigh NC, US
Christopher John Roach - Apex NC, US

Assignee:

E. I. du Pont de Nemours and Company - Wilmington DE

International Classification:

B32B 37/00

US Classification:

156155, 156166, 156176, 1563082, 1563096

Abstract:

This invention is directed to a process for the fabrication of features on a silicon wafer utilizing ribbons comprising organic polymer and inorganic material.

US Patent:

7435361, Oct 14, 2008

Filed:

Apr 14, 2005

Appl. No.:

11/106259

Inventors:

Alan Frederick Carroll - Raleigh NC, US
Kenneth Warren Hang - Hillsborough NC, US

Assignee:

E.I. du Pont de Nemours and Company - Wilmington DE

International Classification:

H01B 1/16
H01B 1/22

US Classification:

252514

Abstract:

The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) zinc-containing additive; (c) glass frit wherein said glass frit is lead-free; dispersed in (d) organic medium. The present invention is further directed to an electrode formed from the composition above wherein said composition has been fired to remove the organic vehicle and sinter said glass particles. Still further, the invention is directed to a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition detailed above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode. Additionally, the present invention is directed to a semiconductor device formed by the method detailed above and a semiconductor device formed from the thick film conductive composition detailed above.

US Patent:

7462304, Dec 9, 2008

Filed:

Apr 14, 2005

Appl. No.:

11/106245

Inventors:

Yueli Wang - Morrisville NC, US
Alan Frederick Carroll - Raleigh NC, US
Kenneth Warren Hang - Hillsborough NC, US
Richard John Sheffield Young - Bath, GB

Assignee:

E.I. du Pont de Nemours and Company - Wilmington DE

International Classification:

H01B 1/22

US Classification:

252514

Abstract:

The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Mn-containing additive; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600 C. ; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.

US Patent:

7491442, Feb 17, 2009

Filed:

Oct 18, 2004

Appl. No.:

10/967801

Inventors:

Alan Frederick Carroll - Raleigh NC, US
Christopher John Roach - Apex NC, US

Assignee:

E. I. du Pont de Nemours and Company - Wilmington DE

International Classification:

B32B 19/00
H01L 31/00
H01B 1/02
H01B 1/04

US Classification:

428357, 136256, 252512, 25251933

Abstract:

This invention is directed to a process for the fabrication of features on a silicon wafer utilizing ribbons comprising organic polymer and inorganic material.

US Patent:

7556748, Jul 7, 2009

Filed:

Apr 14, 2005

Appl. No.:

11/106329

Inventors:

Yueli Wang - Morrisville NC, US
Richard John Sheffield Young - Bath, GB
Alan Frederick Carroll - Raleigh NC, US
Kenneth Warren Hang - Hillsborough NC, US

Assignee:

E. I. du Pont de Nemours and Company - Wilmington DE

International Classification:

H01B 1/22

US Classification:

252514

Abstract:

The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600 C. ; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.

US Patent:

7906045, Mar 15, 2011

Filed:

May 28, 2008

Appl. No.:

12/127969

Inventors:

Yueli L. Wang - Morrisville NC, US
Alan Frederick Carroll - Raleigh NC, US
Kenneth Warren Hang - Hillsboroough NC, US
Richard John Sheffield Young - Somerset, GB

Assignee:

E. I. du Pont de Nemours and Company - Wilmington DE

International Classification:

H01B 1/22
B05D 5/12
H01L 31/0224

US Classification:

252514, 106 119, 136256, 427 961

Abstract:

The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600 C. ; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.

US Patent:

7935277, May 3, 2011

Filed:

Jul 21, 2008

Appl. No.:

12/176697

Inventors:

Alan Frederick Carroll - Raleigh NC, US
Kenneth Warren Hang - Hillsborough NC, US

Assignee:

E. I. du Pont de Nemours and Company - Wilmington DE

International Classification:

H01B 1/22
B05D 5/12
H01L 31/0224

US Classification:

252514, 427 961, 136252

Abstract:

The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) zinc-containing additive; (c) glass frit wherein said glass frit is lead-free; dispersed in (d) organic medium. The present invention is further directed to an electrode formed from the composition above wherein said composition has been fired to remove the organic vehicle and sinter said glass particles. Still further, the invention is directed to a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition detailed above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode. Additionally, the present invention is directed to a semiconductor device formed by the method detailed above and a semiconductor device formed from the thick film conductive composition detailed above.