Alan S Cooper

US Patent:

60346884, Mar 7, 2000

Filed:

Sep 15, 1997

Appl. No.:

8/929742

Inventors:

Wayne Eugene Greenwood - Palo Alto CA
Alan Martin Cooper - Menlo Park CA
Karen Louise Evensen - Lake Forest CA

Assignee:

Sony Corporation - Tokyo
Sony Trans Com Inc. - Irvine CA

International Classification:

G06F 314

US Classification:

345353

Abstract:

A user-interface system adapted to navigate through a plurality of menus is disclosed. The system comprises a display system comprising a display having a category area on a first portion of the display, the category area displaying a plurality of categories, including a currently displayed category. Each of the plurality of categories has a plurality of items. The display also has a marquee area on a second portion of the display, which displays items of the currently displayed category. The system further comprises a scrolling mechanism for scrolling through items of each category of the plurality of categories. The marquee area is updated by the scrolling mechanism to display the corresponding items in each category. The scrolling mechanism also indicates a position of a currently displayed item of a currently displayed category by updating the category area. Various embodiments are disclosed.

US Patent:

20200032389, Jan 30, 2020

Filed:

Jun 14, 2016

Appl. No.:

15/735832

Inventors:

- Tempe AZ, US
Jianheng Li - Santa Clara CA, US
John Francis Lehmann - Bethlehem PA, US
Alan Charles Cooper - Macungie PA, US

International Classification:

C23C 16/34
C23C 16/455
C23C 16/44
C23C 16/36
B01J 29/40
C23C 16/448
C23C 16/02

Abstract:

Halidosilane compounds, processes for synthesizing halidosilane compounds, compositions comprising halidosilane precursors, and processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS). Also described herein are methods for depositing silicon containing films such as, without limitation, silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films, at one or more deposition temperatures of about 500 C. or less.