Alan G Jacobs

US Patent:

20220254639, Aug 11, 2022

Filed:

Jan 26, 2022

Appl. No.:

17/584477

Inventors:

- Arlington VA, US
James C. Gallagher - Alexandria VA, US
Marko J. Tadjer - Vienna VA, US
Alan G. Jacobs - Arlington VA, US
Boris N. Feigelson - Springfield VA, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 21/265
H01L 29/20
H01L 29/207
H01L 21/285
H01L 29/45
H01L 21/266
H01L 21/324
H01L 29/36

Abstract:

A method for activating implanted dopants and repairing damage to dopant-implanted GaN to form n-type or p-type GaN. A GaN substrate is implanted with n- or p-type ions and is subjected to a high-temperature anneal to activate the implanted dopants and to produce planar n- or p-type doped areas within the GaN having an activated dopant concentration of about 10-10cm. An initial annealing at a temperature at which the GaN is stable at a predetermined process temperature for a predetermined time can be conducted before the high-temperature anneal. A thermally stable cap can be applied to the GaN substrate to suppress nitrogen evolution from the GaN surface during the high-temperature annealing step. The high-temperature annealing can be conducted under Npressure to increase the stability of the GaN. The annealing can be conducted using laser annealing or rapid thermal annealing (RTA).

US Patent:

20230030549, Feb 2, 2023

Filed:

Jul 28, 2022

Appl. No.:

17/876163

Inventors:

- Arlington VA, US
Mona A. Ebrish - Alexandria VA, US
Andrew D. Koehler - Alexandria VA, US
Alan G. Jacobs - Rockville MD, US
Matthew A. Porter - Virginia Beach VA, US
Karl D. Hobart - Alexandria VA, US
Prakash Pandey - Toledo OH, US
Tolen Michael Nelson - Tecumseh MI, US
Daniel G. Georgiev - Canton MI, US
Raghav Khanna - Toledo OH, US
Michael Robert Hontz - Drexel Hill PA, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 29/06
H01L 29/20
H01L 29/861

Abstract:

A hybrid edge termination structure and method of forming the same. The hybrid edge termination structure in accordance with the invention is based on a junction termination extension (JTE) architecture, but includes an additional Layer of guard ring (GR) structures to further implement the implantation of dopants into the structure. The hybrid edge termination structure of the invention has a three-Layer structure, with a top Layer and a bottom Layer each having a constant dopant concentration in the lateral direction, and a middle Layer consisting of a plurality of spatially defined alternating regions that exhibit the electrical properties of either the top or bottom layer. By including the second layer, a discretized varying charge profile can be obtained that approximates the varying charge profile obtained using tapered edge termination but with easier manufacturing and lower cost.

US Patent:

20210028020, Jan 28, 2021

Filed:

Jul 13, 2020

Appl. No.:

16/927061

Inventors:

- Arlington VA, US
James C. Gallagher - Alexandria VA, US
Marko J. Tadjer - Vienna VA, US
Alan G. Jacobs - Arlington VA, US
Boris N. Feigelson - Springfield VA, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 21/265
H01L 29/20
H01L 29/207
H01L 29/36
H01L 29/45
H01L 21/266
H01L 21/324
H01L 21/285

Abstract:

A method for activating implanted dopants and repairing damage to dopant-implanted GaN to form n-type or p-type GaN. A GaN substrate is implanted with n- or p-type ions and is subjected to a high-temperature anneal to activate the implanted dopants and to produce planar n- or p-type doped areas within the GaN having an activated dopant concentration of about 10-10cm. An initial annealing at a temperature at which the GaN is stable at a predetermined process temperature for a predetermined time can be conducted before the high-temperature anneal. A thermally stable cap can be applied to the GaN substrate to suppress nitrogen evolution from the GaN surface during the high-temperature annealing step. The high-temperature annealing can be conducted under Npressure to increase the stability of the GaN. The annealing can be conducted using laser annealing or rapid thermal annealing (RTA).

US Patent:

20190341261, Nov 7, 2019

Filed:

Apr 30, 2019

Appl. No.:

16/398355

Inventors:

- Arlington VA, US
Francis J. Kub - Arnold MD, US
Alan G. Jacobs - Arlington VA, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 21/268
H01L 21/04
H01L 29/20
H01L 29/16
H01L 21/67
H01L 21/225
B23K 26/00
B23K 26/03
B23K 26/082
B23K 26/12

Abstract:

An enhanced symmetric multicycle rapid thermal annealing process for removing defects and activating implanted dopant impurities in a III-nitride semiconductor sample. A sample is placed in an enclosure and heated to a temperature Tunder an applied pressure Pfor a time t. While the heating of the sample is maintained, the sample is subjected to a series of rapid laser irradiations under an applied pressure Pand a baseline temperature T. Each of the laser irradiations heats the sample to a temperature Tabove its thermodynamic stability limit. After a predetermined number of temperature pulses or a predetermined period of time, the laser irradiations are stopped and the sample is brought to a temperature Tand held at Tfor a time tto complete the annealing.