A thin GaAs Substrate can be provided with a copper back-metal layer to allow the GaAs Substrate to be packaged using conventional plastic packaging technologies. By providing the GaAs Substrate with a copper back-metal layer, the GaAs Substrate can be made thinner than 2 mils (about 50 microns), thereby reducing heat dissipation problems and allowing the semiconductor die to be compatible with soft-solder technologies. By enabling the semiconductor die to be packaged in a plastic package substantial cost savings can be achieved.
High Impedance Radio Frequency Power Plastic Package
Robert J. McLaughlin - Phoenix AZ, US Alexander J. Elliott - Tempe AZ, US Mall Mahalingam - Scottsdale AZ, US Scott D. Marshall - Chandler AZ, US Pierre-Marie J. Piel - Tempe AZ, US
Assignee:
Freescale Semiconductor, Inc. - Austin TX
International Classification:
H01L 23/34
US Classification:
257728, 257701
Abstract:
The disclosures made herein relate to RF power semiconductor devices. In accordance with one embodiment of the disclosures made herein, a RF power plastic semiconductor device comprises a semiconductor (RF) device, a Low Temperature Co-Fired Ceramic (LTCC) impedance matching structure electrically connected to the RF device and a plastic package body formed over the RF device and the impedance matching structure. The LTCC impedance matching structure comprises a metallized layer overlying a major body portion of the impedance matching structure and comprises a passivation layer on the metallized layer. The passivation layer enhances bond strength of a mold compound of the plastic package body to the metallized layer. Portions of the metallized layer are exposed through the passivation layer for enabling electrical interconnects to be formed between the LTCC impedance matching structure and the RF device. Preferably, RF power plastic packages in accordance with embodiments of the disclosures made herein exhibit terminal impedance of at least about twice that of conventional RF power plastic packages.
Alexander J. Elliott - Tempe AZ, US William M. Strom - Chandler AZ, US
Assignee:
Freescale Semiconductor, Inc. - Austin TX
International Classification:
B23P 15/00
US Classification:
29827, 29825, 438123, 257685
Abstract:
method for making a mount for at least two electronic devices forming a first mounting surface () from a material (), and forming a second mounting surface () from the material (). The first mounting surface () is connected to, but spaced from, the second mounting surface () by a mounting surface distance (). The method further comprises reducing the mounting surface distance ().
Miniature Moldlocks For Heatsink Or Flag For An Overmolded Plastic Package
Alexander J. Elliott - Tempe AZ, US L. Mali Mahalingam - Scottsdale AZ, US William M. Strom - Chandler AZ, US
Assignee:
Freescale Semiconductor, Inc. - Austin TX
International Classification:
H01L 23/10 H01L 23/34
US Classification:
257706, 257625
Abstract:
A system of mold locks () is formed on a heatsink () of a packaged semiconductor to prevent/mitigate delamination. The mold locks () anchor a plastic mold compound () that forms the protective cover for the packaged semiconductor die. The mold locks () are miniaturized to allow the positioning of them within the flag portion of the heatsink () and leadframe () such that a semiconductor die can be anchored above the mold locks () formed within the flag portion of the heatsink/lead frame (). The miniaturized size of the said moldlocks ( do not detract from the purpose of the die attach solder ().
Method For Manufacturing Thin Gaas Die With Copper-Back Metal Structures
Alexander J. Elliott - Tempe AZ, US Jeffrey D. Crowder - Phoenix AZ, US Monte G. Miller - Phoenix AZ, US
Assignee:
Freescale Semiconductor, Inc. - Austin TX
International Classification:
G21K 1/12
US Classification:
705 1, 257666, 257473, 257669, 257675, 257700
Abstract:
A thin GaAs Substrate can be provided with a copper back-metal layer to allow the GaAs Substrate to be packaged using conventional plastic packaging technologies. By providing the GaAs Substrate with a copper back-metal layer, the GaAs Substrate can be made thinner than 2 mils (about 50 microns), thereby reducing heat dissipation problems and allowing the semiconductor die to be compatible with soft-solder technologies. By enabling the semiconductor die to be packaged in a plastic package substantial cost savings can be achieved.
Method Of Packaging A Semiconductor Die And Package Thereof
David F. Abdo - Scottsdale AZ, US Alexander J. Elliott - Tempe AZ, US Lakshminarayan Viswanathan - Phoenix AZ, US
Assignee:
Freescale Semiconductor, Inc. - Austin TX
International Classification:
H01L 21/50 H01L 21/48 H01L 21/44
US Classification:
438123
Abstract:
A method of packaging a semiconductor die includes the steps of providing a flange (), coupling one or more active die () to the flange with a lead-free die attach material (), staking a leadframe () to the flange after coupling the one or more active die to the flange, electrically interconnecting the one or more active die and the leadframe with an interconnect structure (), and applying a plastic material () over the flange, the one or more active die, the leadframe, and the interconnect structure.
Alexander J. Elliott - Tempe AZ, US L. M. Mahalingam - Scottsdale AZ, US William M. Strom - Chandler AZ, US
Assignee:
Freescale Semiconductor, Inc. - Austin TX
International Classification:
H01L 23/10 H01L 23/34
US Classification:
257706, 257E23092
Abstract:
A system of mold locks () is formed on a heatsink () of a packaged semiconductor to prevent/mitigate delamination. The mold locks () anchor a plastic mold compound () that forms the protective cover for the packaged semiconductor die. The mold locks () are miniaturized to allow the positioning of them within the flag portion of the heatsink () and leadframe () such that a semiconductor die can be anchored above the mold locks () formed within the flag portion of the heatsink/lead frame (). The miniaturized size of the said moldlocks ( do not detract from the purpose of the die attach solder ().
David F. Abdo - Scottsdale AZ, US Alexander J. Elliott - Tempe AZ, US Lakshminarayan Viswanathan - Phoenix AZ, US
International Classification:
H01L 21/56 H01L 23/495
US Classification:
438112, 257666, 257E21502, 257E23031
Abstract:
A method of packaging a semiconductor die includes the steps of providing a flange (), coupling one or more active die () to the flange with a lead-free die attach material (), staking a leadframe () to the flange after coupling the one or more active die to the flange, electrically interconnecting the one or more active die and the leadframe with an interconnect structure (), and applying a plastic material () over the flange, the one or more active die, the leadframe, and the interconnect structure.