Alexander R Fox

US Patent:

20230038611, Feb 9, 2023

Filed:

Jan 25, 2021

Appl. No.:

17/759072

Inventors:

- Fremont CA, US
Fayaz A. SHAIKH - Lake Oswego OR, US
Kevin M. MCLAUGHLIN - Sherwood OR, US
Alexander Ray FOX - Portland OR, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/02
H01L 21/66
C23C 16/505
C23C 16/34
C23C 16/04

Abstract:

Localized stresses can be modulated in a film deposited on a bowed semiconductor substrate by selectively and locally curing the film by ultraviolet (UV) radiation. A bowed semiconductor substrate can be asymmetrically bowed. A UV-curable film is deposited on the front side or the backside of the bowed semiconductor substrate. A mask is provided between the UV-curable film and a UV source, where openings in the mask are patterned to selectively define exposed regions and non-exposed regions of the UV-curable film. Exposed regions of the UV-curable film modulate localized stresses to mitigate bowing in the bowed semiconductor substrate.

US Patent:

20200102650, Apr 2, 2020

Filed:

Oct 2, 2018

Appl. No.:

16/149948

Inventors:

- Fremont CA, US
Alexander R. Fox - Portland OR, US
Paul C. Lemaire - Raleigh NC, US
David Charles Smith - Lake Oswego OR, US

International Classification:

C23C 16/455
C23C 16/04

Abstract:

A method is provided, including the following operations: simultaneously applying an organosilyl chloride inhibitor and a Lewis base to a surface of a substrate, the organosilyl chloride inhibitor being configured to adsorb onto dielectric regions of the surface of the substrate; performing a plurality of cycles of an ALD process to deposit a metal oxide onto the surface of the substrate; wherein the applying of the organosilyl chloride inhibitor and the Lewis base prevents the ALD process from depositing the metal oxide onto the dielectric regions of the surface of the substrate.

US Patent:

20200040454, Feb 6, 2020

Filed:

Aug 6, 2018

Appl. No.:

16/056301

Inventors:

- Fremont CA, US
Alexander R. FOX - Portland OR, US
Colleen LAWLOR - Oneida NY, US

International Classification:

C23C 16/455

Abstract:

A method of increasing the deposition rate of an atomic layer deposition (ALD) process by co-flowing a volatile base with metal organic, a metal halide, or metal hybride precursor. The base does not react with the precursor with which it is flowed such that the base generates no measurable film on the substrate or particles in the processing chamber during the flow time. The addition of the base catalyst increases the rate of adsorption of the precursor with which it is flowed.

US Patent:

20200043776, Feb 6, 2020

Filed:

Aug 6, 2018

Appl. No.:

16/056260

Inventors:

- Fremont CA, US
Elham MOHIMI - Hillsboro OR, US
Pengyi ZHANG - Tigard OR, US
Paul C. LEMAIRE - Raleigh NC, US
Kashish SHARMA - Fremont CA, US
Alexander R. FOX - Portland OR, US
Nagraj SHANKAR - Tualatin OR, US
Kapu Sirish REDDY - Portland OR, US
David Charles SMITH - Lake Oswego OR, US

International Classification:

H01L 21/768
H01L 21/321
H01L 21/02

Abstract:

A method of improving selectivity of a metal in a selective deposition process. A pre-treatment process for the metal modifies the metal surface, and includes first reducing the metal to remove organic contamination from the metal followed by oxidation of the metal to allow a monolayer of a metal oxide to grow on the surface. This modification of the metal allows inhibitor molecules to adsorb on the metal oxide monolayer to improve selectivity.

US Patent:

20200013615, Jan 9, 2020

Filed:

Sep 18, 2019

Appl. No.:

16/575214

Inventors:

- Fremont CA, US
Alexander R. Fox - Portland OR, US
Colleen Lawlor - Clinton NY, US

International Classification:

H01L 21/02
C23C 16/455
C23C 16/52
C23C 16/40
C23C 16/50

Abstract:

Methods and apparatuses for selectively depositing silicon oxide on surfaces relative to a metal-containing surface such as copper are provided. Methods involve exposing a substrate having hydroxyl-terminated or dielectric surfaces and copper surfaces to a copper-blocking reagent such as an alkyl thiol to selectively adsorb to the copper surface, exposing the substrate to a silicon-containing precursor for depositing silicon oxide, exposing the substrate to a weak oxidant gas and igniting a plasma, or water vapor without plasma, to convert the adsorb silicon-containing precursor to form silicon oxide. Some methods also involve exposing the substrate to a reducing agent to reduce any oxidized copper from exposure to the weak oxidant gas.

US Patent:

20190157076, May 23, 2019

Filed:

Nov 22, 2017

Appl. No.:

15/821590

Inventors:

- Fremont CA, US
Alexander R. Fox - Portland OR, US
Colleen Lawlor - Clinton NY, US

International Classification:

H01L 21/02
C23C 16/50
C23C 16/455
C23C 16/52
C23C 16/40

Abstract:

Methods and apparatuses for selectively depositing silicon oxide on dielectric surfaces relative to a metal-containing surface such as copper are provided. Methods involve exposing a substrate having dielectric and copper surfaces to a copper-blocking reagent such as an alkyl thiol to selectively adsorb to the copper surface, exposing the substrate to a silicon-containing precursor for depositing silicon oxide, exposing the substrate to a weak oxidant gas and igniting a plasma to convert the adsorb silicon-containing precursor to form silicon oxide, and exposing the substrate to a reducing agent to reduce any oxidized copper from exposure to the weak oxidant gas.

US Patent:

20190057858, Feb 21, 2019

Filed:

Aug 18, 2017

Appl. No.:

15/681268

Inventors:

- Fremont CA, US
Alexander R. Fox - Portland OR, US
David Charles Smith - Lake Oswego OR, US
Bart J. van Schravendijk - Palo Alto CA, US

International Classification:

H01L 21/02
H01L 21/311

Abstract:

Provided are methods for the selective deposition of material on a sidewall surface of a patterned feature. In some embodiments, the methods involve providing a substrate having a feature recessed from a surface of the substrate. The feature has a bottom and a sidewall which extends from the bottom. A conformal film is deposited on the feature using an atomic layer deposition (ALD) process. The conformal film deposited on the bottom is modified by exposing the substrate to directional plasma such that the conformal film on the bottom is less dense than the conformal film on the sidewall. The modified conformal film deposited on the bottom of the feature is preferentially etched. Also provided are methods for the selective deposition on a horizontal surface of a patterned feature.

US Patent:

20160258057, Sep 8, 2016

Filed:

Mar 6, 2015

Appl. No.:

14/641179

Inventors:

- Fremont CA, US
George Andrew Antonelli - Portland OR, US
Kevin M. McLaughlin - Sherwood OR, US
Andrew John McKerrow - Lake Oswego OR, US
Curtis Bailey - West Linn OR, US
Alexander R. Fox - Portland OR, US
Stephen Lau - Lake Oswego OR, US
Eugene Smargiassi - Tualatin OR, US
Casey Holder - Tualatin OR, US
Troy Daniel Ribaudo - Portland OR, US
Xiaolan Chen - Tigard OR, US

International Classification:

C23C 16/44
C23C 16/52
C23C 16/48
H01L 21/67

Abstract:

Apparatuses and methods for cleaning a semiconductor processing chamber is provided. The semiconductor processing chamber may include a UV radiation source, a substrate holder, and a UV transmissive window. The UV transmissive window may include one or multiple panes. One or more panes of the UV transmissive window may be non-reactive with fluorine containing chemistries. In multi-pane windows a purge gas flow path may be formed in the gap between windows. A purge gas may be flowed through the purge gas flow path to prevent process gases used in the chamber interior from reaching one or more panes of the UV transmissive window.