Alexander J Simpson

US Patent:

6570256, May 27, 2003

Filed:

Jul 20, 2001

Appl. No.:

09/910380

Inventors:

Richard A. Conti - Mount Kisco NY
Prakash Chimanlal Dev - Plano TX
David M. Dobuzinsky - New Windsor NY
Daniel C. Edelstein - White Plains NY
Gill Y. Lee - Wappingers Falls NY
Padraic C. Shafer - Beacon NY
Alexander Simpson - Wappingers Falls NY
Peter Wrschka - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2348

US Classification:

257761, 257760, 257752, 257 72, 257762, 257767, 438624, 438622

Abstract:

A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3. 3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.

US Patent:

6740539, May 25, 2004

Filed:

Feb 13, 2003

Appl. No.:

10/366149

Inventors:

Richard A. Conti - Mount Kisco NY
Prakash Chimanlal Dev - Plano TX
David M. Dobuzinsky - New Windsor NY
Daniel C. Edelstein - White Plains NY
Gill Y. Lee - Wappingers Falls NY
Padraic C. Shafer - Beacon NY
Alexander Simpson - Wappingers Falls NY
Peter Wrschka - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY
Infineon Technologies A.G.

International Classification:

H01L 5140

US Classification:

438 99, 438624, 438780

Abstract:

A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3. 3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.