Alexander W Simpson

US Patent:

6827635, Dec 7, 2004

Filed:

Mar 5, 2003

Appl. No.:

10/248949

Inventors:

Peter Lahnor - Dresden, DE
Olaf Kuehn - Dresden, DE
Andreas Roemer - Dresden, DE
Alexander Simpson - Warrenville IL

Assignee:

Infineon Technologies Aktiengesellschaft - Munich

International Classification:

B24B 100

US Classification:

451 57, 451 36, 451 37, 451 41, 451 54, 451305, 451443, 451493

Abstract:

A method and apparatus of planarizing substrates is disclosed. A planarizing web medium is prepared for planarizing substrates to reduce defect generation. The planarizing web has a planarizing region and preparing region defined thereon, wherein at least one portion of the preparing region is outside the planarizing region. The web medium is advanced to move one portion of the web out of the planarizing region and another portion into the planarizing region.

US Patent:

6893968, May 17, 2005

Filed:

Oct 10, 2002

Appl. No.:

10/268148

Inventors:

Peter Lahnor - Dresden, DE
Alexander Simpson - Warrenville IL, US

Assignee:

Infineon Technologies AG - Munich

International Classification:

H01L021/311

US Classification:

438697, 438493, 438496, 438694

Abstract:

A process for planarizing a process layer having structures and has been applied to a working surface of a semiconductor device, includes abrading the process layer down to the working surface using a polishing device. The working surface is planarized, and a defect density in the working surface is minimized and the polishing process is topology-independent.

US Patent:

6899597, May 31, 2005

Filed:

Jan 29, 2003

Appl. No.:

10/353733

Inventors:

Peter Wrschka - Danbury CT, US
Alexander Simpson - Warrenville IL, US

Assignee:

Infineon Technologies AG - Munich

International Classification:

B24B001/00

US Classification:

451 41, 451 60

Abstract:

A semiconductive wafer having a layer of conductive material formed thereon is polished. The semiconductor wafer is rotated against an abrasive polishing pad. A solution is applied to the semiconductor wafer and to the abrasive polishing pad. The solution includes an etchant of the conductive material.

US Patent:

6932674, Aug 23, 2005

Filed:

Mar 5, 2003

Appl. No.:

10/248950

Inventors:

Peter Lahnor - Dresden, DE
Olaf Kuehn - Dresden, DE
Andreas Roemer - Dresden, DE
Alexander Simpson - Warrenville IL, US

Assignee:

Infineon Technologies Aktientgesellschaft - Munich

International Classification:

B24B049/00

US Classification:

451 8, 451 5, 451 6, 451296

Abstract:

A method of determining the endpoint of a planarizing process is disclosed. An endpoint detection signal is selectively sampled from at least one predetermined location within a planarizing region defined on a planarizing web. Planarization is stopped when the endpoint criterion based on the endpoint detection signal is detected.

US Patent:

7247567, Jul 24, 2007

Filed:

Jun 16, 2004

Appl. No.:

10/869397

Inventors:

Robert Vacassy - Aurora IL, US
Dinesh N. Khanna - Naperville IL, US
Alexander Simpson - Warrenville IL, US

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

H01L 21/302
H01L 21/461

US Classification:

438693, 438692

Abstract:

The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom. The invention further provides a chemical-mechanical polishing composition particularly useful in polishing tungsten-containing substrates.

US Patent:

7582127, Sep 1, 2009

Filed:

Feb 1, 2007

Appl. No.:

11/670137

Inventors:

Robert Vacassy - Aurora IL, US
Dinesh N. Khanna - Naperville IL, US
Alexander Simpson - Glen Allen VA, US

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

C09G 1/02
C09G 1/04

US Classification:

51308, 106 3, 438691, 438692, 438693

Abstract:

The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom. The invention further provides a chemical-mechanical polishing composition particularly useful in polishing tungsten-containing substrates.

US Patent:

8439994, May 14, 2013

Filed:

Sep 30, 2010

Appl. No.:

12/895529

Inventors:

William C. Allison - Beaverton OR, US
Diane Scott - Portland OR, US
Ping Huang - Eden Prairie MN, US
Richard Frentzel - Murrieta CA, US
Alexander William Simpson - Hillsboro OR, US

Assignee:

NexPlanar Corporation - Hillsboro OR

International Classification:

B24D 11/00
B24D 3/00
B24D 18/00

US Classification:

51293, 451537

Abstract:

Methods of fabricating polishing pads with end-point detection regions for polishing semiconductor substrates using eddy current end-point detection are described.

US Patent:

8628384, Jan 14, 2014

Filed:

Sep 30, 2010

Appl. No.:

12/895465

Inventors:

William C. Allison - Beaverton OR, US
Diane Scott - Portland OR, US
Ping Huang - Eden Prairie MN, US
Richard Frentzel - Murrieta CA, US
Alexander William Simpson - Hillsboro OR, US

Assignee:

NexPlanar Corporation - Hillsboro OR

International Classification:

B24D 3/28

US Classification:

451526, 451528, 451921, 451 6, 451287

Abstract:

Polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described.