Alexei M Marakhtanov

US Patent:

7319316, Jan 15, 2008

Filed:

Jun 29, 2005

Appl. No.:

11/172014

Inventors:

Christopher Kimball - Fremont CA, US
Eric Hudson - Berkeley CA, US
Douglas Keil - Fremont CA, US
Alexei Marakhtanov - Albany CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C02F 1/00

US Classification:

324 7676, 324 7611, 324 7665, 324 7667, 2504922, 356316

Abstract:

A probe apparatus configured to measure a set of electrical characteristics in a plasma processing chamber, the plasma processing chamber including a set of plasma chamber surfaces configured to be exposed to a plasma is disclosed. The probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk structure is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers, wherein the set of electrical characteristics is generated by an ion flux of the plasma. The probe apparatus further includes an insulation barrier configured to substantially electrically separate the collection disk and the conductive path from the set of plasma chamber surfaces.

US Patent:

7479207, Jan 20, 2009

Filed:

Mar 15, 2006

Appl. No.:

11/377074

Inventors:

Christopher Kimball - Fremont CA, US
Eric Hudson - Berkeley CA, US
Douglas Keil - Fremont CA, US
Alexei Marakhtanov - Albany CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C23F 1/02

US Classification:

15634524, 15634526, 15634528, 15634544, 15634547

Abstract:

A plasma probe assembly for use in a plasma processing chamber is provided. A semiconductor probe element with a probe surface at a first end of the semiconductor probe element is provided. An electrical connector is electrically connected to the semiconductor probe element. An electrically insulating sleeve surrounds at least part of the probe element. An adjustment device is connected to the semiconductor probe so that the probe surface is coplanar with an interior chamber surface of the plasma processing chamber.

US Patent:

7578301, Aug 25, 2009

Filed:

Mar 28, 2005

Appl. No.:

11/092737

Inventors:

Eric Hudson - Berkeley CA, US
Douglas Keil - Fremont CA, US
Alexei Marakhtanov - Albany CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H05H 1/24
H05H 1/00
B08B 9/00

US Classification:

134 11, 134 221, 427 8, 427 9, 427569

Abstract:

A method of determining an endpoint of a process by measuring a thickness of a layer, the layer being deposited on the surface by a prior process is disclosed. The method includes providing a sensor that is coplanar with the surface, wherein the sensor is configured to measure the thickness. The method also includes exposing the plasma chamber to a plasma, wherein the thickness is changed by the exposing, and determining the thickness as a function of time. The method further includes ascertaining a steady state condition in the thickness, the steady state condition being characterized by a substantially stable measurement of the thickness, a start of the steady state condition representing the endpoint.

US Patent:

7723994, May 25, 2010

Filed:

Nov 30, 2007

Appl. No.:

11/948926

Inventors:

Christopher Kimball - Fremont CA, US
Eric Hudson - Berkeley CA, US
Douglas Keil - Fremont CA, US
Alexei Marakhtanov - Albany CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

G01N 27/62
H05B 31/26

US Classification:

324464, 31511121

Abstract:

A plasma processing chamber with a probe apparatus configured to measure a set of electrical characteristics in a plasma is disclosed. The plasma processing chamber includes a set of plasma chamber surfaces configured to be exposed to the plasma. The probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk structure is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers.

US Patent:

7758764, Jul 20, 2010

Filed:

Jun 28, 2007

Appl. No.:

11/770637

Inventors:

Rajinder Dhindsa - San Jose CA, US
Alexei Marakhtanov - Albany CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

B44C 1/22
C03C 15/00
C03C 25/68
C23F 1/00

US Classification:

216 71, 216 67, 15634538, 118723 MP

Abstract:

A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by an edge ring. The edge ring is electrically isolated from the chuck. The method includes providing first RF power to the chuck. The method also includes providing an edge ring RF voltage control arrangement. The edge ring RF voltage control arrangement is coupled to the edge ring to provide second RF power to the edge ring resulting in the edge ring having an edge ring potential. The method further includes generating a plasma within the plasma processing chamber to process the substrate. The substrate is being processed while the edge ring RF voltage control arrangement is configured to cause the edge ring potential to be substantially equal to a DC potential of the substrate while processing the substrate.

US Patent:

7837826, Nov 23, 2010

Filed:

Jul 18, 2006

Appl. No.:

11/487999

Inventors:

Alexei Marakhtanov - Albany CA, US
Rajinder Dhindsa - San Jose CA, US
Eric Hudson - Berkeley CA, US
Andreas Fischer - Castro Valley CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C23C 16/00
H01L 21/306

US Classification:

15634548, 118723 I, 118723 AN, 15634549

Abstract:

A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.

US Patent:

7837827, Nov 23, 2010

Filed:

Jun 28, 2007

Appl. No.:

11/770658

Inventors:

Rajinder Dhindsa - San Jose CA, US
Alexei Marakhtanov - Albany CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/3065

US Classification:

15634551, 156915

Abstract:

A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by a first edge ring. The first edge ring is electrically isolated from the chuck. The method includes providing a second edge ring. The second edge ring is disposed below an edge of the substrate. The method also includes providing a coupling ring. The coupling ring is configured to facilitate RF coupling from an ESC (electrostatic chuck) assembly to the first edge ring, thereby causing the first edge ring to have an edge ring potential during substrate processing and causing the RF coupling to be maximized at the first edge ring and minimized at the second edge ring during the substrate processing.

US Patent:

7851368, Dec 14, 2010

Filed:

Jun 28, 2005

Appl. No.:

11/169993

Inventors:

Eric Hudson - Berkeley CA, US
Alexei Marakhtanov - Albany CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/302

US Classification:

438714, 438710, 15634545

Abstract:

In a plasma processing system having a plasma processing chamber, at least one powered electrode and an ignition electrode, a method for igniting a plasma is disclosed. The method includes introducing a substrate into the plasma processing chamber. The method also includes flowing a gas mixture into the plasma processing chamber; energizing the ignition electrode at a strike frequency; and striking a plasma from the gas mixture with the ignition electrode. The method further includes energizing the at least one powered electrode with a target frequency, wherein the strike frequency is greater than the target frequency; and de-energizing the ignition electrode while processing the substrate in the plasma processing chamber.