Cypress Semiconductor Corporation
Fellow and Senior Manager Fab 25 Films and Polish
Spansion
Spansion Fellow and Six Sigma Black Belt
Amd 1986 - 2004
Senior Member Technical Staff
Education:
St.edward's University 1990 - 1995
Master of Business Administration, Masters
University of Cincinnati 1981 - 1986
Bachelors, Electronics Engineering, Electronics
Skills:
Semiconductors Semiconductor Industry Six Sigma Design of Experiments Failure Analysis Silicon Spc Ic Metrology Cross Functional Team Leadership Thin Films Jmp Cmos Yield Cvd Manufacturing Product Engineering Engineering Management Statistical Process Control Characterization Continuous Improvement Pvd Product Development Soc Engineering Photolithography Product Marketing Analog Asic
Otolaryngology, Plastic Surgery within the Head & Neck
Work:
Sante Community PhysiciansCentral California Ear Nose & Throat Medical Group 1351 E Spruce Ave STE 100, Fresno, CA 93720 5594323303 (phone), 5594321468 (fax)
Education:
Medical School Washington University School of Medicine Graduated: 1986
Procedures:
Rhinoplasty Sinus Surgery Tonsillectomy or Adenoidectomy Hearing Evaluation Inner Ear Tests Thyroid Gland Removal
Dr. Evans graduated from the Washington University School of Medicine in 1986. He works in Fresno, CA and specializes in Otolaryngology and Plastic Surgery within the Head & Neck. Dr. Evans is affiliated with Clovis Community Medical Center and Saint Agnes Medical Center.
Us Patents
Method For Controlling Optical Properties Of Antireflective Coatings
A method is used by a semiconductor processing tool. The method comprises forming a first layer above a substrate layer, and forming an inorganic bottom antireflective coating layer above the first layer by introducing at least two gases at a preselected ratio into the semiconductor processing tools. A signal indicating that the semiconductor processing tool has been serviced is received, and the ratio of the gases is varied in response to receiving the signal to control optical parameters of the bottom antireflective coating layer to enhance subsequent photolithographic processes.
Method And Apparatus For Determining Measurement Frequency Based On Hardware Age And Usage
Bradley M. Davis - Austin TX Allen L. Evans - Austin TX Craig W. Christian - Buda TX
Assignee:
Advanced Micro Devices, Inc. - Austin TX
International Classification:
G01R 2700
US Classification:
324600, 700 31, 700 97, 700109, 700121
Abstract:
A processing line includes a processing tool, a measurement tool, and an automatic process controller. The processing tool is adapted to process articles. The measurement tool is adapted to measure a characteristic of selected articles at a measurement frequency. The automatic process controller is adapted to change the measurement frequency based on a usage characteristic of the processing tool. A method for monitoring a processing tool includes processing a plurality of articles in the processing tool; measuring a characteristic of selected articles at a measurement frequency; and changing the measurement frequency based on a usage characteristic of the processing tool.
Method And Apparatus For Reducing Deposition Variation By Modeling Post-Clean Chamber Performance
Bradley M. Davis - Austin TX Allen L. Evans - Austin TX Craig W. Christian - Buda TX
Assignee:
Advanced Micro Devices, Inc. - Austin TX
International Classification:
G01K 120
US Classification:
702136, 702130, 702 88, 702 99, 702106
Abstract:
A method for reducing deposition thickness variation in a processing tool comprises storing a post-clean performance model of the processing tool; receiving at least one of a showerhead age and a tool idle time associated with the processing tool as an input parameter; determining temperature control parameters based on the input parameter and the post-clean performance model; and modifying an operating recipe of the processing tool based on the temperature control parameters. A processing system includes a processing tool and an automatic process controller. The processing tool is adapted to process wafers in accordance with an operating recipe. The automatic process controller is adapted to store a post-clean performance model of the processing tool, receive at least one of a showerhead age and a tool idle time associated with the processing tool as an input parameter, determine temperature control parameters based on the input parameter and the post-clean performance model, and modify the operating recipe of the processing tool based on the temperature control parameters.
Method Of Reducing Interlayer Dielectric Thickness Variation Feeding Into A Planarization Process
A method is provided that comprises forming a first dielectric layer on a workpiece, measuring a thickness of the first dielectric layer, and forming a second dielectric layer above the first dielectric layer, the second dielectric layer being formed to a thickness that is determined based upon the measured thickness of the first dielectric layer.
Method And System For Controlling The Plasma Treatment Of A Titanium Nitride Layer Formed By A Chemical Vapor Deposition Process
Allen Lewis Evans - Austin TX H. Jim Fulford - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Austin TX
International Classification:
H01L 2166
US Classification:
438 14, 438680, 438648
Abstract:
In general, the present invention is directed to a method of forming titanium nitride layers. In one illustrative embodiment, the method comprises forming a layer of titanium nitride by a chemical vapor deposition process, sensing a thickness of the layer of titanium nitride, and providing the sensed thickness of the layer of titanium nitride to a controller. The method further comprises determining at least one parameter of a plasma process to be performed on the layer of titanium nitride based upon the sensed thickness of the layer of titanium nitride and performing the plasma process comprised of the determined at least one parameter on the layer of titanium nitride.
Method For Preventing Or Reducing Delamination Of Deposited Insulating Layers
Allen Lewis Evans - Dripping Springs TX David E. Brown - Austin TX Michael J. Satterfield - Round Rock TX Arturo N. Morosoff - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Austin TX
International Classification:
H01L 21469
US Classification:
438791, 438761, 438758, 438787, 438681
Abstract:
The method disclosed herein provides a semiconducting substrate, positioning the substrate in a high density plasma process chamber, and forming a layer of silicon-rich silicon dioxide above the substrate using a high density plasma process with an oxygen/silane flowrate ratio that is less than or equal to 0. 625. In another embodiment, the method provides a semiconducting substrate having a partially formed integrated circuit device formed thereabove, the integrated circuit device having a plurality of conductive interconnections, e. g. , conductive lines or conductive plugs, formed thereon, and positioning the substrate in a high density plasma process chamber. The method further includes forming a first layer of silicon dioxide between the plurality of conductive interconnections using a high density plasma process with an oxygen/silane flowrate ratio less than 1. 0, and forming a layer of insulating material above the first layer between the conductive interconnections. In another aspect of the present invention, an integrated circuit device has of a plurality of conductive interconnections, e. g.
Control Mechanism For Matching Process Parameters In A Multi-Chamber Process Tool
Craig W. Christian - Buda TX Bradley M. Davis - Austin TX Allen L. Evans - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Austin TX
International Classification:
G06F 1900
US Classification:
700121, 700110, 700 28
Abstract:
The invention, in its various aspects and embodiments, is a method and apparatus for controlling the operation of a multi-chamber process tool in a semiconductor fabrication process. The method comprises setting a plurality of operation parameters for the conduct of a predetermined operation in each of a plurality of process chambers in a multi-chamber process tool; performing the predetermined operation in each of the process chambers; examining a physical characteristic of a processed wafer from each of the process chambers; determining from the examined physical characteristics whether the operating conditions in each of the process chambers match; and resetting at least one operating parameter so that the operating conditions in each of the process chambers will match. The apparatus comprises a processing tool, a review station, and a tool controller. The processing tool includes a plurality of process chambers and an operation controller.
Bryon K. Hance - Austin TX, US Brian D. White - Kyle TX, US William Brennan - Austin TX, US Joseph W. Wiseman - Austin TX, US Allen Evans - Dripping Springs TX, US
Assignee:
Spansion LLC - Sunnyvale CA
International Classification:
H05K 3/02
US Classification:
29847, 29825, 29846, 438634, 438637
Abstract:
A process of forming an electronic device including forming a first ultraviolet (“UV”) blocking layer over a conductive feature, wherein the first UV blocking layer lies within 90 nm of the conductive structure; forming a first insulating layer over the first UV blocking layer; and patterning the first insulating layer and the first UV blocking layer to form a first opening extending to the conductive feature, wherein during the process, the first UV blocking layer is exposed to UV radiation.
Sunrise Acres Elementary School Las Vegas NV 1971-1972, Roy W. Martin Junior High School Las Vegas NV 1972-1973, Ed Von Tobel Junior High School Las Vegas NV 1973-1974
Community:
Donna Koon, Jennifer Lambert, Tracy Shelton, Karen Scharer, Sabra Michelle