Allen W Hansen

US Patent:

20060214289, Sep 28, 2006

Filed:

Oct 28, 2005

Appl. No.:

11/261942

Inventors:

Allen Hansen - Cary NC, US

Assignee:

Nitronex Corporation - Raleigh NC

International Classification:

H01L 23/34

US Classification:

257728000

Abstract:

Monolithic microwave integrated circuits are provided. The MMICs include at least one semiconductor material-based device (e.g., a gallium nitride material-based device) and may also include one or more additional circuit elements. The circuit elements may be active circuit elements (e.g., semiconductor material-based devices such as transistors or diodes) or passive circuit elements (e.g., inductors, capacitors, resistors). The MMICs can exhibit excellent electrical properties including high output powers, high power densities, wide bandwidths, high operating voltages, high efficiencies, high gains, as well as the ability to transmit signals at high frequencies (e.g., greater than 2 GHz) and operate at higher temperatures (e.g., greater than or equal to 150 C.), amongst others.