Allen L Hanson

US Patent:

20130126895, May 23, 2013

Filed:

Jan 4, 2013

Appl. No.:

13/734802

Inventors:

International Rectifier Corporation - El Segundo CA, US
Jerry W. Johnson - Raleigh NC, US
Allen W. Hanson - Cary NC, US

Assignee:

International Rectifier Corporation - El Segundo CA

International Classification:

H01L 29/20

US Classification:

257 76

Abstract:

Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an electrically conductive material (e.g., gold) separated from certain other region(s) of the structure (e.g., a silicon substrate) by a barrier material in order to limit, or prevent, undesirable reactions between the electrically conductive material and the other component(s) which can impair device performance. In certain embodiments, the electrically conductive material may be formed in a via. For example, the via can extend from a topside of the device to a backside so that the electrically conductive material connects a topside contact to a backside contact. The structures described herein may form the basis of a number of semiconductor devices including transistors (e.g., FET), Schottky diodes, light-emitting diodes and laser diodes, amongst others.

US Patent:

20130134437, May 30, 2013

Filed:

Dec 28, 2012

Appl. No.:

13/729394

Inventors:

International Rectifier Corporation - El Segundo CA, US
Jerry W. Johnson - Raleigh NC, US
Allen W. Hanson - Cary NC, US

Assignee:

International Rectifier Corporation - El Segundo CA

International Classification:

H01L 29/20
H01L 23/00

US Classification:

257 76, 438478

Abstract:

Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an electrically conductive material (e.g., gold) separated from certain other region(s) of the structure (e.g., a silicon substrate) by a barrier material in order to limit, or prevent, undesirable reactions between the electrically conductive material and the other component(s) which can impair device performance. In certain embodiments, the electrically conductive material may be formed in a via. For example, the via can extend from a topside of the device to a backside so that the electrically conductive material connects a topside contact to a backside contact. The structures described herein may form the basis of a number of semiconductor devices including transistors (e.g., FET), Schottky diodes, light-emitting diodes and laser diodes, amongst others.