Kent K. Chang - Cupertino CA Allen U. Huang - San Jose CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
H01L 21336
US Classification:
438258, 438264, 438594, 438770
Abstract:
In one embodiment, the present invention relates to a method of forming a NAND type flash memory device capable of more than about 1Ã10 program/erase cycles without significant read disturb problems involving the steps of growing a first oxide layer over at least a portion of a substrate, the substrate including a flash memory cell area and a select gate area; removing a portion of the first oxide layer in the flash memory cell area of the substrate; growing a second oxide layer over at least a portion of the substrate in the flash memory cell area and over at least a portion of the a first oxide layer in the select gate area; annealing the first oxide layer and the second oxide layer under an inert gas and at least one of N O and NO for a period of time from about 1 minute to about 15 minutes; depositing a first in situ doped amorphous silicon layer over at least a portion of the second oxide layer; depositing a dielectric layer over at least a portion of the first in situ doped amorphous silicon layer; depositing a second doped amorphous silicon layer over at least a portion of the dielectric layer; and forming a flash memory cell in the flash memory cell area of the substrate and a select gate transistor in the select gate area substrate, the flash memory cell comprising the second oxide layer, the first in situ doped amorphous silicon layer, the dielectric layer, and the second doped amorphous silicon layer, and the select gate transistor comprising the first oxide layer, the second oxide layer, the first in situ doped amorphous silicon layer, the dielectric layer, and the second doped amorphous silicon layer.
Method Of Reducing Program Disturbs In Nand Type Flash Memory Devices
Kent Kuohua Chang - Cupertino CA Allen U. Huang - San Jose CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
G11C 1604
US Classification:
36518517, 113 63, 11318533
Abstract:
The present invention makes use of ion bombardment to amorphize the source and drain regions of a short channel FET prior to implanting. The source/drain implants are then localized to a shallow depth by appropriate choice of implanting conditions, typically employing rather low bombardment voltages of approximately 10 KeV. Amorphous source/drain regions substantially hinder the diffusion of source/drain dopants and thereby reduce the possibility of punchthrough and loss of FET function. Such devices are preferably used in NAND type flash memory devices maintaining proper self-boosting voltages and FET functions even when short channel lengths are employed.
Sandy Yu - Sunnyvale CA, US Jeffrey Chao-Nan Chen - Mountain View CA, US Allen Pin-Shiu Huang - Mountain View CA, US Jason Xiaobo Zhao - San Jose CA, US Mark Pearson - Renton WA, US
Media timeline interaction may be provided. An electronic presentation may comprise a media object. A user may select the media object within a presentation application and use an on-object user interface in conjunction with the application's user interface to modify the media object. The user may also display the modified media object within the presentation application.
Jeffrey Liang - Menlo Park CA, US Greg Kaine - Sunnyvale CA, US Eric Debes - Santa Clara CA, US Ramon C. Cancel - Hillsboro OR, US Allen Huang - Beaverton OR, US Patrick K. Leung - Hillsboro OR, US Luis Vargas - Hillsboro OR, US
International Classification:
G06F 13/38
US Classification:
710 62
Abstract:
In one embodiment, a system comprises a portable computing device comprising a first graphics controller and a first communication interface, and a turbo station comprising a second communication interface to manage communication with the portable computing device, and at least one auxiliary computing component coupled to the communication interface and configured to process cooperatively with the first graphics controller in the portable computing device.
Daniel Cheung - Mountain View CA, US Allen Huang - Mountain View CA, US
Assignee:
Microsoft Corporation - Redmond WA
International Classification:
G06F 3/01 G06F 15/16
US Classification:
715731, 715733, 715751
Abstract:
A presentation state that includes a presentation and other information is synchronized between one or more client computers executing a presentation client application. A client computer executing the presentation client application receives the presentation state, including the presentation, and is assigned a role. The client computer then provides a user interface (“UI”) for viewing and interacting with the presentation that is based upon the assigned role. The role might be a projector role, a presenter role, an attendee role, a moderator role, a notetaker role, or another type of role. The UI might also be customized for the particular type of client computer that it is displayed upon.
Process To Reduce Post Cycling Program Vt Dispersion For Nand Flash Memory Devices
Kent K. Chang - Cupertino CA Allen U. Huang - San Jose CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
H01L 218247
US Classification:
438258
Abstract:
In one embodiment, the present invention relates to a method of forming a NAND type flash memory device involving the steps of growing a first oxide layer over at least a portion of a substrate, the substrate including a flash memory cell area and a select gate area; removing a portion of the first oxide layer in the flash memory cell area of the substrate; growing a second oxide layer over at least a portion of the substrate in the flash memory cell area and over at least a portion of the a first oxide layer in the select gate area; annealing the first oxide layer and the second oxide layer under an inert gas and at least one of N. sub. 2 O and NO for a period of time from about 1 minute to about 15 minutes; depositing a first in situ doped amorphous silicon layer over at least a portion of the second oxide layer, the first in situ doped amorphous silicon layer having a thickness from about 400. ANG. to about 1,000. ANG. ; depositing a dielectric layer over at least a portion of the first in situ doped amorphous silicon layer; depositing a second doped amorphous silicon layer over at least a portion of the dielectric layer; and forming a flash memory cell in the flash memory cell area of the substrate and a select gate transistor in the select gate area substrate, the flash memory cell comprising the second oxide layer, the first in situ doped amorphous silicon layer, the dielectric layer, and the second doped amorphous silicon layer, and the select gate transistor comprising the first oxide layer, the second oxide layer, the first in situ doped amorphous silicon layer, the dielectric layer, and the second doped amorphous silicon layer.
Systems And Methods For Skinning An Application With Interactive Content
Mayur Datar - Mountain View CA, US Allen Huang - Mountain View CA, US Siavash Sedigh Nejad - Mountain View CA, US
Assignee:
Google Inc. - Mountain View CA
International Classification:
G06F 3/0484 G06F 17/30
Abstract:
A method of skinning an application with content includes receiving, by a client device from a content provider over a data network, a replacement asset associated with a tag specifying an event type, and displaying, by a graphical user interface of the client device, an initial asset of an application executed by the client device. The method further includes determining, by a hooking component of the client device, that an event corresponding to the event type occurred during execution of the application, and selecting, by the hooking component, the replacement asset associated with the tag specifying the event type, responsive to the determination that the event corresponding to the event type occurred. The method yet further includes replacing, by the client device, the initial asset with the selected replacement asset for display by the graphical user interface, responsive to the determination that the event corresponding to the event type occurred.
Method And System For Customizing Toolbar Buttons Based On Usage
Systems, methods, and machine-readable media for determining a set of toolbar buttons to display on a toolbar is provided. The system may include a monitoring module, a configuration module, and a display module. The monitoring module may be configured to monitor usage of a plurality of features of the toolbar. The configuration module may be configured to determine a number of button positions on an updated toolbar based on the usage of the plurality of features and select a button to display for each button position of the number of button positions based on the usage of the plurality of features. The display module may be configured to display the button in the button position on the updated toolbar.
The Beverly Hills Pain Institute & Neuorology 415 N Crescent Dr Suite 220, Beverly Hills, CA 90210
Beverly Hills Pain Institute & Neurology 4560 Admiralty Way Suite 255, Marina Del Rey, CA 90292 3108882877 (Phone)
Procedures:
ACL (Anterior Cruciate Ligament) Surgery Ankle Fusion Ankle Ligament Reconstruction Arthrodesis Surgery Arthroscopic Joint Reconstruction Arthroscopic Joint Surgery Arthroscopic Labrum Repair Arthroscopic Meniscus Repair Arthroscopic Microdiscectomy Arthroscopic Rotator Cuff Repair Arthroscopic Shoulder Reconstruction Arthroscopic Surgery Arthroscopic Wrist Surgery Articular Cartilage Repair Artificial Disc Replacement Back Surgery Bone & Joint Repair Bone & Joint Replacement Carpal Tunnel Release Cervical Facet Joint Injection Cervical Injections Cervical Medial Branch Block Chemodenervation Diagnostic Imaging Diagnostic Ultrasound Disability Evaluation Disc Arthroplasty EEG (Electroencephalogram) Elbow Arthroscopy Elbow Ligament Reconstruction Elbow Surgery Electrodiagnostic Medicine Procedures EMG (Electromyography) Employment Physicals Evoked Potential Test Facet Block Facet Joint Injection Hip Fracture & Dislocation Treatment Hip Replacement Hip Replacement Revisions IV Therapy Joint Arthrocentesis Joint Injection Knee Replacement Knee Replacement Revisions Lumbar Facet Joint Injection Lumbar Medial Branch Block Lumbar Selective Nerve Root Block Nerve Blocks Nerve Conduction Studies Nerve Conduction Velocity Neurological Testing Neurolytic Nerve Block Reconstructive Ankle Surgery Rotator Cuff Repair Shoulder Surgery Spinal Injections
Conditions:
AIDS Ankle Disorders Ankle Fracture Ankle Injury Ankylosing Spondylitis Arthritis Arthritis of the Foot Back Disorders Carpal Fractures Carpal Tunnel Syndrome Degenerative Joint Disease in the Knee Degenerative Joint Disease in the Shoulder Degenerative Spinal Disorders Degenerative Spine Diseases Dislocated Joint Elbow Bursitis Elbow Disorders Foot Conditions Foot Fracture Fracture Hand Conditions Hand Fracture (incl. Wrist and Fingers) Head Injuries Headache HIV - Human Immunodeficiency Virus Knee Injuries Lupus Erythematosus Lyme Disease Migraine Muscle Conditions Neck Disorders Nerve Compression Nerve Disorders Neuromuscular Diseases Occupational Injuries Osteoarthritis Osteoporosis Shoulder Dislocation Shoulder Disorders Spinal Cord Injury Spinal Stenosis Spine and Brain Disorders Sports Injuries Sprain Wrist Disorders
Certifications:
Physical Medicine & Rehabilitation, 2010
Awards:
Healthgrades Honor Roll www.beverlydoc.com
Languages:
English Taiwanese
Philosophy:
Dr Huang is dedicated to the accurate diagnosis and effective treatment of pain with the goal of
restoring maximum function lost through injury, illness or disabling conditions. Dr. Huang believes in
treating the whole person, not just the problem area. He will work with you to treat your medical problems and to develop a treatment/prevention plan.
Dr. Huang is available to treat any disability resulting from disease or injury, from sore shoulders to spinal cord injuries. His focus is on the development of a comprehensive program for putting the pieces of a person's life back together after injury or disease without surgery.
Dr. Huang takes the time needed to accurately pinpoint the source of an ailment. They he designs a treatment plan that can be carried out by the patients themselves or with the help of Dr. Huang's medical team.
Education:
Medical School University Of Cincinnati College Of Medicine Graduated: 2005 Medical School University Of Pittsburgh Medical Center Graduated: 2009 Medical School The Ohio State University Graduated: 2000
Dr. Allen Huang, Hacienda Heights CA - DC (Doctor of Chiropractic)
Dr. Huang graduated from the George Washington University School of Medicine and Health Science in 1991. He works in Owatonna, MN and specializes in Ophthalmology. Dr. Huang is affiliated with Owatonna Hospital.
Casa Colina Centers For RehabCasa Colina Centers For Rehabilitation 255 E Bonita Ave, Pomona, CA 91767 9095967733 (phone), 9095960153 (fax)
Education:
Medical School University of Cincinnati College of Medicine Graduated: 2005
Languages:
English Spanish
Description:
Dr. Huang graduated from the University of Cincinnati College of Medicine in 2005. He works in Pomona, CA and specializes in Physical Medicine & Rehabilitation. Dr. Huang is affiliated with Casa Colina Hospital & Centers For Healthcare.
Allen Huang (1998-2000), Josh Freese (2006-2009), Robin Weidlich (1994-1996), Clara Wong (2001-2004), Matthew Lyngard (1993-1994), Juliet Wolford (2002-2005)