Kent K. Chang - Cupertino CA Allen U. Huang - San Jose CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
H01L 21336
US Classification:
438258, 438264, 438594, 438770
Abstract:
In one embodiment, the present invention relates to a method of forming a NAND type flash memory device capable of more than about 1Ã10 program/erase cycles without significant read disturb problems involving the steps of growing a first oxide layer over at least a portion of a substrate, the substrate including a flash memory cell area and a select gate area; removing a portion of the first oxide layer in the flash memory cell area of the substrate; growing a second oxide layer over at least a portion of the substrate in the flash memory cell area and over at least a portion of the a first oxide layer in the select gate area; annealing the first oxide layer and the second oxide layer under an inert gas and at least one of N O and NO for a period of time from about 1 minute to about 15 minutes; depositing a first in situ doped amorphous silicon layer over at least a portion of the second oxide layer; depositing a dielectric layer over at least a portion of the first in situ doped amorphous silicon layer; depositing a second doped amorphous silicon layer over at least a portion of the dielectric layer; and forming a flash memory cell in the flash memory cell area of the substrate and a select gate transistor in the select gate area substrate, the flash memory cell comprising the second oxide layer, the first in situ doped amorphous silicon layer, the dielectric layer, and the second doped amorphous silicon layer, and the select gate transistor comprising the first oxide layer, the second oxide layer, the first in situ doped amorphous silicon layer, the dielectric layer, and the second doped amorphous silicon layer.
Method Of Reducing Program Disturbs In Nand Type Flash Memory Devices
Kent Kuohua Chang - Cupertino CA Allen U. Huang - San Jose CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
G11C 1604
US Classification:
36518517, 113 63, 11318533
Abstract:
The present invention makes use of ion bombardment to amorphize the source and drain regions of a short channel FET prior to implanting. The source/drain implants are then localized to a shallow depth by appropriate choice of implanting conditions, typically employing rather low bombardment voltages of approximately 10 KeV. Amorphous source/drain regions substantially hinder the diffusion of source/drain dopants and thereby reduce the possibility of punchthrough and loss of FET function. Such devices are preferably used in NAND type flash memory devices maintaining proper self-boosting voltages and FET functions even when short channel lengths are employed.
Sandy Yu - Sunnyvale CA, US Jeffrey Chao-Nan Chen - Mountain View CA, US Allen Pin-Shiu Huang - Mountain View CA, US Jason Xiaobo Zhao - San Jose CA, US Mark Pearson - Renton WA, US
Media timeline interaction may be provided. An electronic presentation may comprise a media object. A user may select the media object within a presentation application and use an on-object user interface in conjunction with the application's user interface to modify the media object. The user may also display the modified media object within the presentation application.
Jeffrey Liang - Menlo Park CA, US Greg Kaine - Sunnyvale CA, US Eric Debes - Santa Clara CA, US Ramon C. Cancel - Hillsboro OR, US Allen Huang - Beaverton OR, US Patrick K. Leung - Hillsboro OR, US Luis Vargas - Hillsboro OR, US
International Classification:
G06F 13/38
US Classification:
710 62
Abstract:
In one embodiment, a system comprises a portable computing device comprising a first graphics controller and a first communication interface, and a turbo station comprising a second communication interface to manage communication with the portable computing device, and at least one auxiliary computing component coupled to the communication interface and configured to process cooperatively with the first graphics controller in the portable computing device.
Daniel Cheung - Mountain View CA, US Allen Huang - Mountain View CA, US
Assignee:
Microsoft Corporation - Redmond WA
International Classification:
G06F 3/01 G06F 15/16
US Classification:
715731, 715733, 715751
Abstract:
A presentation state that includes a presentation and other information is synchronized between one or more client computers executing a presentation client application. A client computer executing the presentation client application receives the presentation state, including the presentation, and is assigned a role. The client computer then provides a user interface (“UI”) for viewing and interacting with the presentation that is based upon the assigned role. The role might be a projector role, a presenter role, an attendee role, a moderator role, a notetaker role, or another type of role. The UI might also be customized for the particular type of client computer that it is displayed upon.
Process To Reduce Post Cycling Program Vt Dispersion For Nand Flash Memory Devices
Kent K. Chang - Cupertino CA Allen U. Huang - San Jose CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
H01L 218247
US Classification:
438258
Abstract:
In one embodiment, the present invention relates to a method of forming a NAND type flash memory device involving the steps of growing a first oxide layer over at least a portion of a substrate, the substrate including a flash memory cell area and a select gate area; removing a portion of the first oxide layer in the flash memory cell area of the substrate; growing a second oxide layer over at least a portion of the substrate in the flash memory cell area and over at least a portion of the a first oxide layer in the select gate area; annealing the first oxide layer and the second oxide layer under an inert gas and at least one of N. sub. 2 O and NO for a period of time from about 1 minute to about 15 minutes; depositing a first in situ doped amorphous silicon layer over at least a portion of the second oxide layer, the first in situ doped amorphous silicon layer having a thickness from about 400. ANG. to about 1,000. ANG. ; depositing a dielectric layer over at least a portion of the first in situ doped amorphous silicon layer; depositing a second doped amorphous silicon layer over at least a portion of the dielectric layer; and forming a flash memory cell in the flash memory cell area of the substrate and a select gate transistor in the select gate area substrate, the flash memory cell comprising the second oxide layer, the first in situ doped amorphous silicon layer, the dielectric layer, and the second doped amorphous silicon layer, and the select gate transistor comprising the first oxide layer, the second oxide layer, the first in situ doped amorphous silicon layer, the dielectric layer, and the second doped amorphous silicon layer.
Systems And Methods For Skinning An Application With Interactive Content
Mayur Datar - Mountain View CA, US Allen Huang - Mountain View CA, US Siavash Sedigh Nejad - Mountain View CA, US
Assignee:
Google Inc. - Mountain View CA
International Classification:
G06F 3/0484 G06F 17/30
Abstract:
A method of skinning an application with content includes receiving, by a client device from a content provider over a data network, a replacement asset associated with a tag specifying an event type, and displaying, by a graphical user interface of the client device, an initial asset of an application executed by the client device. The method further includes determining, by a hooking component of the client device, that an event corresponding to the event type occurred during execution of the application, and selecting, by the hooking component, the replacement asset associated with the tag specifying the event type, responsive to the determination that the event corresponding to the event type occurred. The method yet further includes replacing, by the client device, the initial asset with the selected replacement asset for display by the graphical user interface, responsive to the determination that the event corresponding to the event type occurred.
Method And System For Customizing Toolbar Buttons Based On Usage
Systems, methods, and machine-readable media for determining a set of toolbar buttons to display on a toolbar is provided. The system may include a monitoring module, a configuration module, and a display module. The monitoring module may be configured to monitor usage of a plurality of features of the toolbar. The configuration module may be configured to determine a number of button positions on an updated toolbar based on the usage of the plurality of features and select a button to display for each button position of the number of button positions based on the usage of the plurality of features. The display module may be configured to display the button in the button position on the updated toolbar.
License Records
Allen C Huang
License #:
E125833 - Active
Category:
Emergency medical services
Issued Date:
Oct 24, 2016
Expiration Date:
Oct 31, 2018
Type:
Los Angeles County EMS Agency
Resumes
Director, Office Of Environmental Health And Safety
Dharma Realm Buddhist University
Director, Office of Environmental Health and Safety
Kittelson & Associates, Inc. Mar 1, 2002 - Dec 31, 2013
Senior Transportation Planner
Dowling Associates Mar 1, 2002 - Jan 31, 2012
Senior Transportation Engineer
Ictpa Northern Ca Chapter Aug 2006 - Dec 2008
Presient
Urs Corporation Jan 1, 2000 - Dec 31, 2002
Transportation Engineer
Education:
New York University 1997 - 1999
Master of Science, Masters, Engineering
Tamkang University 1990 - 1994
Bachelors, Management
辭修 High School
New York University - Polytechnic School of Engineering
Skills:
Transportation Engineering Transportation Planning Transportation Traffic Engineering Road Traffic Highways Urban Planning Gis Public Transport
Languages:
Mandarin English
Certifications:
License 26781 State of California Department of Public Health, License 26781
Dr. Huang graduated from the George Washington University School of Medicine and Health Science in 1991. He works in Owatonna, MN and specializes in Ophthalmology. Dr. Huang is affiliated with Owatonna Hospital.
Casa Colina Centers For RehabCasa Colina Centers For Rehabilitation 255 E Bonita Ave, Pomona, CA 91767 9095967733 (phone), 9095960153 (fax)
Education:
Medical School University of Cincinnati College of Medicine Graduated: 2005
Languages:
English Spanish
Description:
Dr. Huang graduated from the University of Cincinnati College of Medicine in 2005. He works in Pomona, CA and specializes in Physical Medicine & Rehabilitation. Dr. Huang is affiliated with Casa Colina Hospital & Centers For Healthcare.
Allen Huang (1998-2000), Josh Freese (2006-2009), Robin Weidlich (1994-1996), Clara Wong (2001-2004), Matthew Lyngard (1993-1994), Juliet Wolford (2002-2005)