Anand Gawarikar

age ~41

from Hillsboro, OR

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Also known as:
  • Gawarikar Anand
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Anand Gawarikar Phones & Addresses

  • Hillsboro, OR
  • Minneapolis, MN

Work

  • Company:
    University of minnesota
    Sep 2005
  • Position:
    Graduate research assistant

Education

  • Degree:
    PhD
  • School / High School:
    University of Minnesota-Twin Cities
    2007 to 2010
  • Specialities:
    Electrical Engineering

Skills

Characterization • Optics • Microfabrication • Matlab • Semiconductors • Mems • Semiconductor Process Technology • Interferometry

Languages

English • Hindi

Industries

Semiconductors

Resumes

Anand Gawarikar Photo 1

Defect Metrology Engineer At Intel

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Location:
Hillsboro, OR
Industry:
Semiconductors
Work:
University of Minnesota since Sep 2005
Graduate Research Assistant
Intel Dec 2010 - May 2011
Graduate Intern
University of Minnesota Sep 2005 - Jun 2006
Graduate School Fellow
Indian Institute of Technology, Bombay May 2004 - Jul 2004
Summer Intern
Education:
University of Minnesota-Twin Cities 2007 - 2010
PhD, Electrical Engineering University of Minnesota-Twin Cities 2005 - 2007
M.S, Electrical Engineering 2007 Institute of Technology, BHU 2001 - 2005
B. Tech., Electrical Engineering
Skills:
Characterization
Optics
Microfabrication
Matlab
Semiconductors
Mems
Semiconductor Process Technology
Interferometry
Languages:
English
Hindi

Us Patents

  • Detection Beyond The Standard Radiation Noise Limit Using Spectrally Selective Absorption

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  • US Patent:
    20110240860, Oct 6, 2011
  • Filed:
    May 29, 2009
  • Appl. No.:
    12/996704
  • Inventors:
    Joseph J. Talghader - Edina MN, US
    Ryan P. Shea - St. Paul MN, US
    Anand S. Gawarikar - Minneapolis MN, US
  • International Classification:
    G01J 5/20
    G01J 5/02
  • US Classification:
    2503384, 250340
  • Abstract:
    High sensitivity thermal detectors that perform beyond the blackbody radiation noise limit are described. Thermal detectors, as described herein, use spectrally selective materials that absorb strongly in the wavelength region of the desired signal but only weakly or not at all in the primary thermal emission band. Exemplary devices that can be made in accordance with the present invention include microbolometers containing semiconductors that absorb in the MWIR and/or THz range but not the LWIR.
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