Andrew C Loyd

US Patent:

20090057906, Mar 5, 2009

Filed:

Aug 29, 2007

Appl. No.:

11/896034

Inventors:

Steven Mark Buchoff - Baltimore MD, US
Andrew Christian Loyd - Monkton MD, US
Robert S. Howell - Silver Spring MD, US

International Classification:

H01L 23/48
H01L 21/477

US Classification:

257754, 438683, 257E2301, 257E21497

Abstract:

A method for producing a silicide contact. The method comprises the steps of depositing a metal on a SiC substrate; forming an encapsulating layer on deposited metal; and annealing said deposited metal to form a suicide contact. The encapsulating layer prevents agglomeration and formation of stringers during the annealing process.

US Patent:

20110287944, Nov 24, 2011

Filed:

May 19, 2010

Appl. No.:

12/783116

Inventors:

Erica Folk - Linthicum Heights MD, US
Patrick B. Shea - Washington DC, US
Andrew C. Loyd - Monkton MD, US

International Classification:

H01L 39/24
H01L 39/22

US Classification:

505329, 505413, 216 13, 216 3

Abstract:

Methods of forming superconducting devices are disclosed. In one embodiment, the method can comprise depositing a protective barrier layer over a superconducting material layer, curing the protective barrier layer, depositing a photoresist material layer over the protective barrier layer and irradiating and developing the photoresist material layer to form an opening pattern in the photoresist material layer. The method can further comprise etching the protective barrier layer to form openings in the protective barrier layer based on the opening pattern, etching the superconductor material layer based on the openings in the protective barrier layer to form openings in the superconductor material layer that define a first set of superconductor material raised portins and stripping the photoresist material layer and the protective barrier layer.