Andrew J Proudman

age ~36

from Stoneham, MA

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Also known as:
  • Andy Proudman
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Andrew Proudman Phones & Addresses

  • Stoneham, MA
  • Ithaca, NY
  • 52 South St, Hanson, MA 02341 • 7812948055

Work

  • Company:
    Cree inc - Durham, NC
    Feb 2012
  • Position:
    Process development engineer - metal organic chemical vapor deposition r&d

Education

  • School / High School:
    Cornell University
    Jan 2012
  • Specialities:
    M.Eng in Engineering, Chemical Engineering /Energy Economics Engineering

Resumes

Andrew Proudman Photo 1

Andrew Proudman North Grafton, MA

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Work:
Cree Inc
Durham, NC
Feb 2012 to Jul 2013
Process Development Engineer - Metal Organic Chemical Vapor Deposition R&D Unilever, Global R&D
Trumbull, CT
Jun 2011 to Aug 2011
Process Development Engineer (Summer Intern) Heat and Mass Transfer
Ithaca, NY
Sep 2010 to Dec 2010
Teaching Assistant Heat and Mass Transfer
Ithaca, NY
Jun 2010 to Aug 2010
Undergraduate researcher, Capillary adhesion laboratory Luminus Devices
Woburn, MA
Jul 2009 to Aug 2009
Semiconductor fabrication engineer (Summer Intern)
Education:
Cornell University
Jan 2012
M.Eng in Engineering, Chemical Engineering /Energy Economics Engineering Cornell University
Ithaca, NY
2007 to 2011
BS in Chemical Engineering

Us Patents

  • Aluminum-Based Gallium Nitride Integrated Circuits

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  • US Patent:
    20210118871, Apr 22, 2021
  • Filed:
    Oct 1, 2020
  • Appl. No.:
    17/061075
  • Inventors:
    - Norwood MA, US
    James G. Fiorenza - Carlisle MA, US
    Puneet Srivastava - Wilmington MA, US
    Andrew Proudman - Medford MA, US
    Kenneth Flanders - Reading MA, US
    Denis Michael Murphy - Concord MA, US
    Leslie P. Green - Framingham MA, US
    Peter A. Stubler - Andover MA, US
  • International Classification:
    H01L 27/06
    H01L 49/02
    H01L 29/20
    H01L 21/285
    H01L 29/66
    H01L 21/8252
    H01L 29/45
    H01L 23/66
    H01L 29/205
    H01L 23/48
    H01L 29/778
  • Abstract:
    Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.
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