Andrew Robison Tr Robison

US Patent:

8368469, Feb 5, 2013

Filed:

Mar 10, 2011

Appl. No.:

13/044989

Inventors:

Saeed Mohammadi - Zionsville IN, US
Sultan R. Helmi - West Lafayette IN, US
Jing-Hwa Chen - West Lafayette IN, US
Andrew J. Robison - West Lafayette IN, US

Assignee:

Purdue Research Foundation - West Lafayette IN

International Classification:

H03F 3/16

US Classification:

330277, 330311

Abstract:

Illustrative embodiments of a power amplifier are disclosed which include a plurality of amplifier cells, each having an input and an output. The plurality of amplifier cells are formed on a semiconductor substrate such that the outputs of the plurality of amplifier cells are electrically coupled in series. Each of the plurality of amplifier cells may comprise a first transistor that is electrically insulated from the semiconductor substrate and a first feedback resistor configured to dynamically bias the first transistor.

US Patent:

8558619, Oct 15, 2013

Filed:

Jan 4, 2013

Appl. No.:

13/733889

Inventors:

Sultan R. Helmi - West Lafayette IN, US
Jing-Hwa Chen - West Lafayette IN, US
Andrew J. Robison - West Lafayette IN, US

Assignee:

Purdue Research Foundation - West Lafayette IN

International Classification:

H03F 3/16

US Classification:

330277, 330311

Abstract:

Illustrative embodiments of power amplifiers are disclosed. In one embodiment, a power amplifier includes a plurality of transistors formed on a silicon-on-insulator (SOI) substrate such that the plurality of transistors are each electrically isolated from one another within the SOI substrate. The power amplifier also includes a plurality of biasing networks, each biasing network being configured to dynamically bias at least one of the plurality of transistors. The plurality of transistors are electrically coupled in a series stack, with an output of the power amplifier being provided across the series stack.