Andrew Lee Schmitt

US Patent:

7803707, Sep 28, 2010

Filed:

Aug 17, 2006

Appl. No.:

11/506147

Inventors:

Song Jin - Madison WI, US
Andrew L. Schmitt - Madison WI, US
Yipu Song - Madison WI, US

Assignee:

Wisconsin Alumni Research Foundation - Madison WI

International Classification:

H01L 21/44

US Classification:

438682, 257E21478, 257E21586, 257E21593, 438681

Abstract:

The present invention provides metal silicide nanowires, including metallic, semiconducting, and ferromagnetic semiconducting transition metal silicide nanowires. The nanowires are grown using either chemical vapor deposition (CVD) or chemical vapor transport (CVT) on silicon substrates covered with a thin silicon oxide film, the oxide film desirably having a thickness of no greater than about 5 nm and, desirably, no more than about 2 nm (e. g. , about 1-2 nm). The metal silicide nanowires and heterostructures made from the nanowires are well-suited for use in CMOS compatible wire-like electronic, photonic, and spintronic devices.

US Patent:

8395265, Mar 12, 2013

Filed:

Jul 2, 2010

Appl. No.:

12/829665

Inventors:

Song Jin - Madison WI, US
Andrew L. Schmitt - Madison WI, US
Yipu Song - Madison WI, US

Assignee:

Wisconsin Alumni Research Foundation - Madison WI

International Classification:

H01L 23/52

US Classification:

257757, 257E23072, 257E33063, 977762

Abstract:

The present invention provides metal silicide nanowires, including metallic, semiconducting, and ferromagnetic semiconducting transition metal silicide nanowires. The nanowires are grown using either chemical vapor deposition (CVD) or chemical vapor transport (CVT) on silicon substrates covered with a thin silicon oxide film, the oxide film desirably having a thickness of no greater than about 5 nm and, desirably, no more than about 2 nm (e. g. , about 1-2 nm). The metal silicide nanowires and heterostructures made from the nanowires are well-suited for use in CMOS compatible wire-like electronic, photonic, and spintronic devices.

US Patent:

20130171465, Jul 4, 2013

Filed:

Feb 8, 2013

Appl. No.:

13/763075

Inventors:

Wisconsin Alumni Research Foundation - Madison WI, US
Andrew L. Schmitt - Shorewood WI, US
Yipu Song - Beijing, CN

Assignee:

Wisconsin Alumni Research Foundation - Madison WI

International Classification:

H01L 29/49

US Classification:

428606

Abstract:

The present invention provides metal silicide nanowires, including metallic, semiconducting, and ferromagnetic semiconducting transition metal silicide nanowires. The nanowires are grown using either chemical vapor deposition (CVD) or chemical vapor transport (CVT) on silicon substrates covered with a thin silicon oxide film, the oxide film desirably having a thickness of no greater than about 5 nm and, desirably, no more than about 2 nm (e.g., about 1-2 nm). The metal silicide nanowires and heterostructures made from the nanowires are well-suited for use in CMOS compatible wire-like electronic, photonic, and spintronic devices.

US Patent:

20210358336, Nov 18, 2021

Filed:

May 6, 2021

Appl. No.:

17/313776

Inventors:

- Valencia CA, US
Harry Miesner - Wauwatosa WI, US
Ryan Worm - Port Washington WI, US
Rajesh Guntupalli - Glendale WI, US
Kevin J. Stafeil - Delafield WI, US
Andrew Schmitt - Porter Ranch CA, US
Kyle Beljanski - North Hollywood CA, US

International Classification:

G09F 3/00
C09J 7/29
B32B 7/12

Abstract:

A self-expiring band structure is activated upon the contacting of two chemical constituents together. This contacting may be performed by the attachment action of the band or independently thereof. After a time duration has passed, the coaction of the chemical constituents result in a visually perceptible change can alert others to the fact the band has expired. These bands may be both printable, such as by a printer or other machine printing, as well as time-expiring making them a very versatile product that offer heightened security at the price point closer to that of a disposable item because they do not require complex infrastructure for validation.

US Patent:

20150250432, Sep 10, 2015

Filed:

Mar 5, 2014

Appl. No.:

14/197434

Inventors:

- Milwaukee WI, US
Andrew Schmitt - Shorewood WI, US

Assignee:

Brady Worldwide, Inc. - Milwaukee WI

International Classification:

A61B 6/04
A61B 6/00

Abstract:

A radiography comfort device may be selectively attached to a panel of a medical imaging device. The radiography comfort device includes a woven microfiber fabric and a first adhesive that are both radiolucent. The woven microfiber fabric has a first surface and a second surface on opposing sides of the woven microfiber fabric. The first adhesive is laminated to the second surface of the woven microfiber fabric. When the radiography comfort device is attached to the panel of the medical imaging device using the first adhesive, the first surface of woven microfiber fabric is presented for contact by tissue of an individual being imaged. Further, a pad can be laminated to a portion of the periphery of the fabric to provide an edge cushion when the comfort device is attached to the panel.

US Patent:

20140362156, Dec 11, 2014

Filed:

Jun 6, 2013

Appl. No.:

13/911782

Inventors:

- Milwaukee WI, US
Andrew L. Schmitt - Shorewood WI, US

Assignee:

Brady Worldwide, Inc. - Milwaukee WI

International Classification:

B41J 2/335

US Classification:

347215

Abstract:

Objects of arbitrary shape and size are marked by a method using a thermal transfer ribbon. The method comprises the steps of creating a graphic on a thermal transfer ribbon, joining the graphic-bearing ribbon to a receptor substrate, removing the graphic-bearing ribbon from the receptor substrate, placing the graphic-bearing ribbon on a target object with the graphic in contact with a surface of the target object, applying sufficient heat and pressure to the graphic-bearing ribbon such that the graphic is transferred from the ribbon to the surface of the target object, and removing the ribbon from the surface of the target object.