Angela Hopson Lee

US Patent:

6338874, Jan 15, 2002

Filed:

Dec 14, 1995

Appl. No.:

08/572385

Inventors:

Kam S. Law - Union City CA
Robert Robertson - Palo Alto CA
Pamela Lou - San Francisco CA
Marc Michael Kollrack - Alameda CA
Angela Lee - Sunnyvale CA
Dan Maydan - Los Altos Hills CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

42725518, 42725519, 42725527, 42725537, 427255394

Abstract:

Multilayer deposition of thin films onto glass substrates to form thin film transistors can be carried out in the same chamber under similar reaction conditions at high deposition rates. We have found that sequential thin layers of silicon nitride and amorphous silicon can be deposited in the same chamber by chemical vapor deposition using pressure of at least 0. 5 Torr and substrate temperatures of about 250-370Â C. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single multichamber vacuum system.

US Patent:

6444277, Sep 3, 2002

Filed:

Sep 9, 1994

Appl. No.:

08/303566

Inventors:

Kam S. Law - Union City CA
Robert Robertson - Palo Alto CA
Pamela Lou - San Francisco CA
Marc Michael Kollrack - Alameda CA
Angela Lee - Sunnyvale CA
Dan Maydan - Los Altos Hills CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B05D 306

US Classification:

427574, 427535, 42725518, 42725528, 4272557, 427573

Abstract:

Amorphous silicon thin films can be deposited onto large area glass substrates at high deposition rates by chemical vapor deposition using pressure of at least 0. 8 Torr and temperatures of about 270-350Â C. and fairly high gas flow rates of silane in a hydrogen carrier gas. The spacing between the inlet gas manifold and the substrate in the CVD chamber is maintained so as to maximize the deposition rate. Improved transistor characteristics are observed when the substrate is either exposed to a hydrogen plasma for a few seconds prior to high rate deposition of the amorphous silicon, or when a first layer of amorphous silicon is deposited using a slow deposition rate process prior to deposition of the high deposition rate amorphous silicon.

US Patent:

7589238, Sep 15, 2009

Filed:

Aug 17, 2006

Appl. No.:

11/465444

Inventors:

Eric Connor - Los Gatos CA, US
Dominique Charmot - Campbell CA, US
Han Ting Chang - Livermore CA, US
Florence Roger - Santa Clara CA, US
Son Hoai Nguyen - San Jose CA, US
Jonathan Mills - San Jose CA, US
Jerry M. Buysse - Los Altos CA, US
Angela Lee - San Jose CA, US
Deidre Madsen - Sunnyvale CA, US
Jun Shao - Fremont CA, US
Michael J. Cope - Berkeley CA, US
John Fordtran - Dallas TX, US

Assignee:

Ilypsa, Inc. - Thousand Oaks CA

International Classification:

C07C 211/11
C08G 2/00

US Classification:

564511, 564512, 5147723, 525526, 521 36

Abstract:

Anion-binding polymers are described. The anion-binding polymers in some cases are low swelling anion-binding polymers. In some cases, the anion-binding polymers have a pore volume distribution such that a fraction of the polymer is not available for non-interacting solutes above a certain percentage of the MW of the target ion for the polymer. In some cases, the anion-binding polymers are characterized by low ion-binding interference, where the interference is measured in, for example, a gastrointestinal simulant, relative to non-interfering buffer. Pharmaceutical composition, methods of use, and kits are also described.

US Patent:

7608674, Oct 27, 2009

Filed:

Nov 3, 2004

Appl. No.:

10/980991

Inventors:

Eric Connor - Los Gatos CA, US
Dominique Charmot - Campbell CA, US
Han-Ting Chang - Livermore CA, US
Florence Roger - Preverenges, CH
Gerrit Klaerner - Los Gatos CA, US
Son Hoai Nguyen - San Jose CA, US
Jonathan Mills - San Jose CA, US
Jerry M. Buysse - Los Altos CA, US
Angela Lee - San Jose CA, US
Deidre Madsen - Sunnyvale CA, US
Jun Shao - Fremont CA, US
Michael J. Cope - Berkeley CA, US
John Fordtran - Dallas TX, US

Assignee:

Ilypsa, Inc. - Thousand Oaks CA

International Classification:

C11D 1/00
C08F 26/06

US Classification:

526310, 526258, 525334, 424 7806, 424 7811, 424 7812, 424 7816

Abstract:

Anion-binding polymers are described. The anion-binding polymers in some cases are low swelling anion-binding polymers. In some cases, the anion-binding polymers have a pore volume distribution such that a fraction of the polymer is not available for non-interacting solutes above a certain percentage of the MW of the target ion for the polymer. In some cases, the anion-binding polymers are characterized by low ion-binding interference, where the interference is measured in, for example, a gastrointestinal simulant, relative to non-interfering buffer. Pharmaceutical composition, methods of use, and kits are also described.

US Patent:

7718746, May 18, 2010

Filed:

May 22, 2009

Appl. No.:

12/471220

Inventors:

Eric Connor - Los Gatos CA, US
Dominique Charmot - Campbell CA, US
Han-Ting Chang - Livermore CA, US
Florence Roger - Preverenges, CH
Gerrit Klaerner - San Jose CA, US
Son Hoai Nguyen - San Jose CA, US
Jonathan Mills - San Jose CA, US
Jerry M. Buysse - Los Altos CA, US
Angela Lee - San Jose CA, US
Deidre Madsen - Sunnyvale CA, US
Jun Shao - Fremont CA, US
Michael J. Cope - Berkeley CA, US
John Fordtran - Dallas TX, US

Assignee:

Ilypsa, Inc. - Thousand Oaks CA

International Classification:

C08F 26/06
C07C 211/11

US Classification:

526310, 526258, 525334, 525374, 525526, 424 7806, 424 7811, 424 7812, 424 7816, 524612, 521 36, 564511, 564512

Abstract:

Anion-binding polymers are described. The anion-binding polymers in some cases are low swelling anion-binding polymers. In some cases, the anion-binding polymers have a pore volume distribution such that a fraction of the polymer is not available for non-interacting solutes above a certain percentage of the MW of the target ion for the polymer. In some cases, the anion-binding polymers are characterized by low ion-binding interference, where the interference is measured in, for example, a gastrointestinal simulant, relative to non-interfering buffer. Pharmaceutical composition, methods of use, and kits are also described.

US Patent:

20130022570, Jan 24, 2013

Filed:

Feb 24, 2011

Appl. No.:

13/581049

Inventors:

Jordan Kopping - Weinheim, DE
Kalpesh Biyani - Fremont CA, US
Eric Connor - Los Gatos CA, US
Scott Hecker - Del Mar CA, US
Inez Lees - Mountain View CA, US
Grace Quaker - San Francisco CA, US
Faleh Salaymeh - Sunnyvale CA, US
Hongmin Zhang - Fremont CA, US
David Bergbreiter - College Station TX, US
Paul Mansky - San Francisco CA, US
YongQi Mu - Los Altos CA, US
Michael James Cope - Berkeley CA, US
Elizabeth Goka - San Jose CA, US
Angela Lee - San Jose CA, US
Deidre Madsen - Los Altos CA, US
Jun Shao - Fremont CA, US

Assignee:

RELYPSA, INC. - Santa Clara CA

International Classification:

C08F 226/02
A61P 3/06
A61K 31/785

US Classification:

424 7835, 526304

Abstract:

The present invention provides a crosslinked amine and amide polymers effective for binding and removing bile salts from the gastrointestinal tract. These bile acid binding polymers or pharmaceutical compositions thereof can be administered to subjects to treat various conditions, including hypercholesteremia, diabetes, pruritis, irritable bowel syndrome-diarrhea (IBS-D), bile acid malabsorption, and the like.

US Patent:

20130189215, Jul 25, 2013

Filed:

Feb 24, 2011

Appl. No.:

13/581102

Inventors:

Inez Lees - Menlo Park CA, US
Kalpesh Biyani - Fremont CA, US
Eric Connor - Los Gatos CA, US
Scott Hecker - Del Mar CA, US
Hongmin Zhang - Fremont CA, US
Michael James Cope - Berkeley CA, US
Elizabeth Goka - San Jose CA, US
Angela Lee - San Jose CA, US
Deidre Madsen - Los Altos CA, US
Jun Shao - Fremont CA, US
Xinnan Zhang - Campbell CA, US

Assignee:

RELYPSA, INC. - Santa Clara CA

International Classification:

C08F 226/06
A61K 45/06
C08G 73/06
A61K 31/787

US Classification:

424 7801, 526258, 528392, 528393

Abstract:

The present invention provides crosslinked amine polymers effective for binding and removing bile salts from the gastrointestinal tract. These bile acid binding polymers or pharmaceutical compositions thereof can be administered to subjects to treat various conditions, including hypercholesteremia, diabetes, pruritus, irritable bowel syndrome-diarrhea (IBS-D), bile acid malabsorption, and the like.

US Patent:

54417686, Aug 15, 1995

Filed:

Feb 8, 1994

Appl. No.:

8/193310

Inventors:

Kam S. Law - Union City CA
Robert Robertson - Palo Alto CA
Michael Kollrack - Alameda CA
Angela T. Lee - Sunnyvale CA
Takako Takehara - Hayward CA
Guofu J. Feng - San Jose CA
Dan Maydan - Los Altos Hills CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1622

US Classification:

4272557

Abstract:

An improved method of depositing films of a gate silicon nitride and an amorphous silicon on a thin film transistor substrate at high deposition rates while maintaining superior film quality is provided. The material near the interface between the amorphous silicon and the nitride are deposited at a low deposition rate which produces superior quality films. The region away from the interface are deposited at a high deposition rate which produces lesser, but still good quality films. By using this method, superior quality thin film transistors can be produced at very high efficiency. The method can be carried out by depositing a high quality g-SiN. sub. x at a low deposition rate on top of an average quality gate nitride deposited at a high deposition rate and then depositing an amorphous silicon layer. It also applies in a process where high quality amorphous silicon is first deposited at a low deposition rate on a gate nitride layer to form an interface, and then average quality amorphous silicon is deposited at a high deposition rate to complete the silicon layer. The unique process can be applied whenever an interface exists with an active semiconductor layer of amorphous silicon.