Palo Alto Medical Foundation since Jul 2008
Implementation Specialist
Kaiser Permanente 2005 - 2008
Senior Analyst
Education:
California State University-Long Beach - College of Business Administration 2003
BS, Double; Mgmt Info Systems, Marketing
Skills:
Ehr Emr Healthcare Healthcare Information Technology Visio Ambulatory Golive Epic Systems Nextgen Training Hipaa Powerpoint Microsoft Excel Ambulatory Care Informatics Physicians Clinical Research Software Documentation Microsoft Office Cpoe Hl7 Medical Coding Health Information Exchange Software Implementation Healthcare Consulting Healthcare Industry Healthcare Management Hospitals Microsoft Word Visual Basic Revenue Cycle Projects Word Excel
Silicon Valley Bank Jan 2011 - Jun 2012
Relationship Advisor With Entrepreneur Banking Services
Build 2006 - 2011
Mentor
Silicon Valley Bank Jan 2009 - Dec 2010
Relationship Advisor
Silicon Valley Bank Aug 2006 - Dec 2008
Client Service Advisor
Simplyteas.com Aug 2006 - Dec 2008
Business Developer
Education:
San Jose State University
California State University - Sacramento
Bachelors, Bachelor of Science, Business Administration, Marketing
Hieu Van Tran - San Jose CA, US Tam Huu Tran - San Jose CA, US Vishal Sarin - Santa Clara CA, US Anh Ly - San Jose CA, US Niang Hangzo - San Jose CA, US Sang Thanh Nguyen - Union City CA, US
Assignee:
Silicon Storage Technology, Inc. - Sunnyvale CA
International Classification:
G05F001/10
US Classification:
327539
Abstract:
A bandgap reference generator comprises a PMOS transistor and NMOS transistor in a pnp bipolar junction transistor connected in series in a first leg. The bandgap reference generator includes a second leg that includes a PMOS transistor, an NMOS transistor, a resistor and a pnp bipolar junction transistor. A bias circuit provides a bias to a mirror formed by the gates of the PMOS transistors to lower the operating voltage of the bandgap reference generator. A second biasing circuit may provide bias to the mirror formed of the NMOS transistors. A time-based and a DC bias-based start up circuitry and method is provided.
A multi-operational amplifier system comprises a plurality of operational amplifiers and a controller to configure the plurality of operational amplifiers. The operational amplifiers may be selectively configured to operate individually or in combination with other of the operational amplifiers. The operational amplifiers may have different common node inputs. In one aspect, the different inputs may be selected from groups of PMOS, N-type NMOS and NZ NMOS inputs. The operational amplifiers may include the different inputs that are arranged as differential pairs.
A multi-operational amplifier system comprises a plurality of operational amplifiers and a controller to configure the plurality of operational amplifiers. The operational amplifiers may be selectively configured to operate individually or in combination with other of the operational amplifiers. The operational amplifiers may have different common node inputs. In one aspect, the different inputs may be selected from groups of PMOS, N-type NMOS and NZ NMOS inputs. The operational amplifiers may include the different inputs that are arranged as differential pairs.
Test Circuit And Method For Multilevel Cell Flash Memory
Hieu Van Tran - San Jose CA, US Anh Ly - San Jose CA, US Sang Thanh Nguyen - Union City CA, US Vishal Sarin - Cupertino CA, US Hung Q. Nguyen - Fremont CA, US William John Saiki - Mountain View CA, US Loc B. Hoang - San Jose CA, US
Assignee:
Silicon Storage Technology, Inc. - Sunnyvale CA
International Classification:
G11C 29/00
US Classification:
714718
Abstract:
A test circuit is sued to detect voltage, current or signals of a digital multilevel memory cell system or to test operation or performance by applying inputted voltages, currents or signals to the memory cell system.
Hieu Van Tran - San Jose CA, US Anh Ly - San Jose CA, US Sang Thanh Nguyen - Union City CA, US Vishal Sarin - Cupertino CA, US
Assignee:
Silicon Storage Technology, Inc. - Sunnyvale CA
International Classification:
H03F 1/14
US Classification:
330 51, 330124 R, 330253, 330285, 330295
Abstract:
A multi-operational amplifier system comprises a plurality of operational amplifiers and a controller to configure the plurality of operational amplifiers. The operational amplifiers may be selectively configured to operate individually or in combination with other of the operational amplifiers. The operational amplifiers may have different common node inputs. In one aspect, the different inputs may be selected from groups of PMOS, N-type NMOS and NZ NMOS inputs. The operational amplifiers may include the different inputs that are arranged as differential pairs.
Method For Handling A Defective Top Gate Of A Source-Side Injection Flash Memory Array
Hieu Van Tran - San Jose CA, US Hung Quoc Nguyen - Fremont CA, US Anh Ly - San Jose CA, US Sheng-Hsiung Hsueh - San Jose CA, US Sang Thanh Nguyen - Union City CA, US Loc B. Hoang - San Jose CA, US Steve Choi - Irvine CA, US Thuan T. Vu - San Jose CA, US
A memory system includes memory cells arranged in sectors. A decoder corresponding to a sector disables memory cells having a defective top gate. The decoder may include a low voltage or high voltage latch for the disabling. A top gate handling algorithm is included. The memory system may include dynamic top gate coupling. A programming algorithm and waveforms with top gate handling is included.
Flash Memory Array Having Control/Decode Circuitry For Disabling Top Gates Of Defective Memory Cells
Hieu Van Tran - San Jose CA, US Hung Quoc Nguyen - Fremont CA, US Anh Ly - San Jose CA, US Sheng-Hsiung Hsueh - San Jose CA, US Sang Thanh Nguyen - Union City CA, US Loc B. Hoang - San Jose CA, US Steve Choi - Irvine CA, US Thuan T. Vu - San Jose CA, US
A memory system includes memory cells arranged in sectors. A decoder corresponding to a sector disables memory cells having a defective top gate. The decoder may include a low voltage or high voltage latch for the disabling. A top gate handling algorithm is included. The memory system may include dynamic top gate coupling. A programming algorithm and waveforms with top gate handling is included.
Flash Memory Array System Including A Top Gate Memory Cell
Hieu Van Tran - San Jose CA, US Hung Quoc Nguyen - Fremont CA, US Anh Ly - San Jose CA, US Sheng-Hsiung Hsueh - San Jose CA, US Sang Thanh Nguyen - Union City CA, US Loc B. Hoang - San Jose CA, US Steve Choi - Irvine CA, US Thuan T. Vu - San Jose CA, US
Assignee:
Silicon Storage Technology, Inc. - Sunnyvale CA
International Classification:
G11C 16/04
US Classification:
36518515, 36518514, 36518503
Abstract:
A memory system includes memory cells arranged in sectors. A decoder corresponding to a sector disables memory cells having a defective top gate. The decoder may include a low voltage or high voltage latch for the disabling. A top gate handling algorithm is included. The memory system may include dynamic top gate coupling. A programming algorithm and waveforms with top gate handling is included.
I tend to forget to hit reply when responding to a text message.
Anh Ly
Work:
Lop Tieng Anh - Director Hanoi university
Bragging Rights:
Tot nghiep dai hoc bang kha, leu heu the nao lai thanh giang vien. Cong viec cung ok, the la gan doi minh voi ve day hoc, mot cong viec chang co may phu hop voi tinh cach.
Anh Ly
Education:
Golden West College
Anh Ly
About:
Khin khin, xấu mà còn chảnh
Bragging Rights:
Giữ độc thân được tới pi giờ ( hok pit còn zin hem nha! )
Anh Ly
About:
Life is not measured by the number of breaths we take but by the moments that take our breath away