Anirudha V Sumant

US Patent:

8354290, Jan 15, 2013

Filed:

Apr 5, 2011

Appl. No.:

13/080255

Inventors:

Anirudha V. Sumant - Argonne IL, US
Orlando H. Auciello - Lemont IL, US
Derrick C. Mancini - Argonne IL, US

Assignee:

UChicago Argonne, LLC - Argonne IL

International Classification:

H01L 27/20

US Classification:

438 53, 438 50, 438 52, 257254, 257E21598, 257E27006

Abstract:

An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.

US Patent:

8525185, Sep 3, 2013

Filed:

Apr 7, 2011

Appl. No.:

13/081683

Inventors:

Charles L. Goldsmith - Plano TX, US
Orlando H. Auciello - Bolingbrook IL, US
John A. Carlisle - Romeoville IL, US
Suresh Sampath - Santa Barbara CA, US
Anirudha V. Sumant - Plainfield IL, US
Robert W. Carpick - Philadelphia PA, US
James Hwang - Bethlehem PA, US
Derrick C. Mancini - Riverside IL, US
Chris Gudeman - Santa Barbara CA, US

Assignee:

UChicago Argonne, LLC - Argonne IL

International Classification:

G01L 9/00

US Classification:

257 77, 257419, 257E27006, 257E29167

Abstract:

A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a “fast discharge diamond dielectric layer” and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

US Patent:

20070220959, Sep 27, 2007

Filed:

Oct 4, 2006

Appl. No.:

11/542812

Inventors:

Anirudha V. Sumant - Downers Grove IL, US
Robert W. Carpick - Madison WI, US
Orlando H. Auciello - Bolingbrook IL, US
John A. Carlisle - Plainfield IL, US

Assignee:

UChicago Argonne LLC - Chicago IL

International Classification:

G01B 5/28

US Classification:

73105

Abstract:

A monolithically integrated 3-D membrane or diaphragm/tip (called 3-D tip) of substantially all UNCD having a tip with a radius of about less than 50 nm capable of measuring forces in all three dimensions or being used as single tips or in large arrays for imprint of data on memory media, fabrication of nanodots of different materials on different substrates and many other uses such as nanolithography production of nanodots of biomaterials on substrates, etc. A method of molding UNCD is disclosed including providing a substrate with a predetermined pattern and depositing an oxide layer prior to depositing a carbide-forming metallic seed layer, followed by seeding with diamond nano or micropowder in solvent suspension, or mechanically polishing with diamond powder, or any other seeding method, followed by UNCD film growth conforming to the predetermined pattern. Thereafter, one or more steps of masking and/or etching and/or coating and/or selective removal and/or patterning and/or electroforming and/or lapping and/or polishing are used in any combination to form the tip or probe.

US Patent:

20080063888, Mar 13, 2008

Filed:

Sep 13, 2006

Appl. No.:

11/520432

Inventors:

Anirudha Vishwanath Sumant - Downers Grove IL, US
Robert William Carpick - Madison WI, US
Frank Ewald Pfefferkorn - Madison WI, US

International Classification:

B22D 7/06

US Classification:

428599, 427180

Abstract:

The present invention provides tungsten carbide-containing surfaces, and particularly tungsten carbide-containing cutting tools, that are at least partially coated with a thin nanocrystalline diamond film. Also provided are methods for producing the nanocrystalline diamond-coated surfaces. The films are desirably continuous and uniform with a thickness of no greater than about 1 micron. The films may be coated onto the cutting edge(s) of a micro-cutting tool to strengthen the tool, thereby extending its lifetime without significantly increasing the diameter or radius of curvature of the cutting surface.

US Patent:

20080142709, Jun 19, 2008

Filed:

Mar 19, 2007

Appl. No.:

11/687996

Inventors:

Anirudha Vishwanath Sumant - Downers Grove IL, US
Robert William Carpick - Philadelphia PA, US

International Classification:

G01N 23/00

US Classification:

250306

Abstract:

Monolithic tetrahedra amorphous carbon (ta-C) nanoprobes and ta-C coated nanoprobes and methods for fabricating such nanoprobes are provided. The nanoprobes provide hard, wear-resistant, low friction, and chemically inert probes for use in such applications as atomic force microscopy, nanolithography and metrology.

US Patent:

20110107473, May 5, 2011

Filed:

Mar 14, 2007

Appl. No.:

11/686046

Inventors:

Robert W. Carpick - Philadelphia PA, US
Kumar Sridharan - Madison WI, US
Anirudha V. Sumant - Downers Grove IL, US

International Classification:

G01Q 70/14
C23C 14/06
C23C 14/48
B82Y 40/00
B82Y 35/00

US Classification:

850 59, 427523, 427527, 977832, 977891

Abstract:

Diamond-like carbon (DLC) coated nanoprobes and methods for fabricating such nanoprobes are provided. The nanoprobes provide hard, wear-resistant, low friction probes for use in such applications as atomic force microscopy, nanomachining, nanotribology, metrology and nanolithography. The diamond-like carbon coatings include a carbon implantation layer which increases adhesion of a deposited DLC layer to an underlying nanoprobe tip.

US Patent:

20130084436, Apr 4, 2013

Filed:

Sep 29, 2011

Appl. No.:

13/248074

Inventors:

Anirudha V. Sumant - Plainfield IL, US

Assignee:

UCHICAGO ARGONNE, LLC - Chicago IL

International Classification:

B32B 3/00
B05D 3/10

US Classification:

4281951, 216 37

Abstract:

A method to fabricate nanoporous diamond membranes and a nanoporous diamond membrane are provided. A silicon substrate is provided and an optical lithography is used to produce metal dots on the silicon substrate with a predefined spacing between the dots. Selective seeding of the silicon wafer with nanodiamond solution in water is performed followed by controlled lateral diamond film growth producing the nanoporous diamond membrane. Back etching of the under laying silicon is performed to open nanopores in the produced nanoporous diamond membrane.

US Patent:

20130273720, Oct 17, 2013

Filed:

Apr 16, 2012

Appl. No.:

13/448068

Inventors:

Anirudha V. SUMANT - Plainfield IL, US
Alexander A. Balandin - Riverside CA, US

International Classification:

H01L 21/20

US Classification:

438478, 257E2109

Abstract:

A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.