Anne M Miller

US Patent:

6443814, Sep 3, 2002

Filed:

Sep 24, 2001

Appl. No.:

09/962428

Inventors:

Anne E. Miller - Portland OR
A. Daniel Feller - Portland OR
Kenneth C. Cadien - Portland OR

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L 21302

US Classification:

451 41, 134 3, 134 28, 134902

Abstract:

Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is performed prior to the CMP of the copper. In alternative embodiments, a rinse operation is performed subsequent to the cleaning operation and prior to the CMP. In further alternatives, a post-polish cleaning operation with a chelating agent is performed. In still further alternatives, the pH of a pre-polish cleaner is ramped during the pre-polish cleaning operation to match the pH of the polish slurry which is used, subsequent to the cleaning operation, to remove excess portions of the copper layer to be polished.

US Patent:

6464568, Oct 15, 2002

Filed:

Dec 4, 2000

Appl. No.:

09/729609

Inventors:

Anne E. Miller - Portland OR
A. Daniel Feller - Portland OR
Kenneth C. Cadien - Portland OR

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L 21302

US Classification:

451 41, 134 3, 134 28, 134902

Abstract:

Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is performed prior to the CMP of the copper. In alternative embodiments, a rinse operation is performed subsequent to the cleaning operation and prior to the CMP. In further alternatives, a post-polish cleaning operation with a chelating agent is performed. In still further alternatives, the pH of a pre-polish cleaner is ramped during the pre-polish cleaning operation to match the pH of the polish slurry which is used, subsequent to the cleaning operation, to remove excess portions of the copper layer to be polished.

US Patent:

6596640, Jul 22, 2003

Filed:

Jun 21, 2002

Appl. No.:

10/177539

Inventors:

Paul B. Fishcer - Portland OR
James A. Boardman - Hillsboro OR
Anne E. Miller - Portland OR

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L 21302

US Classification:

438692, 438750, 438754, 438455, 438 7, 438 10, 438 16, 438 17

Abstract:

The present invention includes a method of providing a first substrate; forming an insulator over the first substrate; forming an opening in the insulator; forming a conductor over the insulator and in the opening; removing the conductor over the insulator with a first chemical-mechanical polish process to leave the conductor in the opening; and reducing thickness of the insulator with a second chemical-mechanical process to permit the conductor in the opening to protrude. The present invention further includes a structure having such a conductor that protrudes.

US Patent:

6719614, Apr 13, 2004

Filed:

Jan 9, 2002

Appl. No.:

10/044378

Inventors:

Anne E. Miller - Portland OR
A. Daniel Feller - Portland OR
Kenneth C. Cadien - Portland OR

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

B24B 100

US Classification:

451 41, 451285, 510175, 252 791

Abstract:

Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is performed prior to the CMP of the copper. In alternative embodiments, a rinse operation is performed subsequent to the cleaning operation and prior to the CMP. In further alternatives, a post-polish cleaning operation with a chelating agent is performed. In still further alternatives, the pH of a pre-polish cleaner is ramped during the pre-polish cleaning operation to match the pH of the polish slurry which is used, subsequent to the cleaning operation, to remove excess portions of the copper layer to be polished.

US Patent:

6719920, Apr 13, 2004

Filed:

Nov 30, 2001

Appl. No.:

10/002855

Inventors:

Anne E. Miller - Portland OR

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

C09K 1300

US Classification:

252 791, 252 794, 438692

Abstract:

A slurry is described that comprises a mixture of between about 0. 01 mole and about 0. 1 mole per liter of an organic acid salt, between about 1% to about 20% by volume of an abrasive, and an oxidizer.

US Patent:

6740591, May 25, 2004

Filed:

Nov 16, 2000

Appl. No.:

09/715282

Inventors:

Anne E. Miller - Portland OR
A. Daniel Feller - Portland OR
Kenneth C. Cadien - Portland OR

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L 21302

US Classification:

438692, 438693, 252 791

Abstract:

A copper polish slurry, for chemical mechanical polishing of copper and copper diffusion barriers may be formed by combining a chelating, organic acid buffer system such as citric acid and potassium citrate; and an abrasive, such as for example colloidal silica. Alternative copper polish slurries, in accordance with the present invention, may be formed by further combining an oxidizer, such as hydrogen peroxide, and/or a corrosion inhibitor such as benzotriazole. Advantageous properties of slurries in accordance with the present invention include the enhancement of Cu removal rates to 3000 angstroms per minute. This high polish rate is achieved while maintaining local pH stability and substantially reducing global and local corrosion as compared to prior art copper polish slurries. Local pH stability provides for reduced within-wafer non-uniformity and reduced corrosion defects. Furthermore, copper diffusion barriers such as tantalum or tantalum nitride may also be polished with such slurries wherein the oxidizer is not included.

US Patent:

6752844, Jun 22, 2004

Filed:

Mar 29, 1999

Appl. No.:

09/280268

Inventors:

Anne E. Miller - Portland OR
A. Daniel Feller - Portland OR
Kenneth C. Cadien - Portland OR

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

C09C 168

US Classification:

51307, 51308, 51309, 438691, 438692, 438693

Abstract:

The invention provides a chemical-mechanical polishing slurry comprising a liquid, cerium ions as an oxidizer, an abrasive, and a pH increasing substance. The cerium ions are in the liquid in a quantity equal to the inclusion of at least 0. 02 molar ammonium cerium nitrate in the liquid. The abrasive is also included in the liquid. The liquid, the cerium ions and the abrasive jointly have a first pH value. The pH increasing substance increases the first pH value to a second pH value above 1. 5.

US Patent:

6787061, Sep 7, 2004

Filed:

Nov 16, 2000

Appl. No.:

09/715690

Inventors:

Anne E. Miller - Portland OR

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

C09K 1300

US Classification:

252 791, 252 794, 438692

Abstract:

Slurries for use in the chemical mechanical polishing (CMP) of copper and copper diffusion barriers that reduce pattern sensitive erosion of an underlying dielectric layer include at least one surfactant. Inclusion of surfactants, such as cetyltrimethylammonium bromide in a slurry mixture can reduce pattern sensitive erosion of dielectric materials such as silicon oxide, and fluorinated oxides of silicon that would otherwise occur during CMP of copper and copper diffusion barriers as is typical in the formation of copper interconnect lines in integrated circuits.