Anthony J Balistreri

US Patent:

20100259321, Oct 14, 2010

Filed:

Apr 14, 2009

Appl. No.:

12/423776

Inventors:

Deep C. Dumka - Richardson TX, US
Martin E. Jones - Plano TX, US
Charles F. Campbell - McKinney TX, US
Anthony M. Balistreri - Plano TX, US

Assignee:

TRIQUINT SEMICONDUCTOR, INC. - Hillsboro OR

International Classification:

H03H 11/00
H01L 29/06
H01L 29/778
H01L 29/78
H01L 29/812

US Classification:

327581, 257488, 257194, 257343, 257280, 257E2901, 257E29246, 257E29261, 257E29317

Abstract:

Embodiments include but are not limited to apparatuses and systems including a field-effect transistor switch. A field-effect transistor switch may include a first field plate coupled with a gate electrode, the first field plate disposed substantially equidistant from a source electrode and a drain electrode. The field-effect transistor switch may also include a second field plate proximately disposed to the first field plate and disposed substantially equidistant from the source electrode and the drain electrode. The first and second field plates may be configured to reduce an electric field between the source electrode and the gate electrode and between the drain electrode and the gate electrode.

US Patent:

60882808, Jul 11, 2000

Filed:

Oct 7, 1999

Appl. No.:

9/413928

Inventors:

Wilbur Christian Vogley - Missouri City TX
Anthony M. Balistreri - Plano TX
Karl M. Guttag - Plano TX
Steven D. Krueger - Dallas TX
Joseph H. Neal - McKinney TX
Kenneth A. Poteet - Houston TX
Joseph P. Hartigan - Stafford TX
Roger D. Norwood - McKinney TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

G11C 700

US Classification:

365221

Abstract:

A synchronous random access memory is arranged to be responsive directly to a system clock signal for operating synchronously with the associated microprocessor. The synchronous random access memory is further arranged to either write-in or read out data in a synchronous burst operation or synchronous wrap operation in addition to synchronous random access operations. The synchronous random access memory device may be fabricated as a dynamic storage device or as a static storage device.