Anthony Gc Buonassisi from Andover, MA, age 46

Method To Reduce Dislocation Density In Silicon Using Stress
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US Patent:

8389999, Mar 5, 2013
Filed:

Sep 28, 2010
Appl. No.:

12/892370
Inventors:

Anthony Buonassisi - Cambridge MA, US
Mariana Bertoni - Somerville MA, US
Ali Argon - Belmont MA, US
Sergio Castellanos - Sonora, MX
Alexandria Fecych - Somerville MA, US
Douglas Powell - Highland Heights OH, US
Michelle Vogl - Dekalb IL, US
Assignee:

Massachusetts Institute of Technology - Cambridge MA
International Classification:

H01L 29/04
US Classification:

257 75, 257 52, 257 59, 257 72, 438 57, 438 58, 438 97
Abstract:

A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations.

Phonon-Enhanced Crystal Growth And Lattice Healing
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US Patent:

8450704, May 28, 2013
Filed:

Dec 3, 2010
Appl. No.:

12/959795
Inventors:

Anthony Buonassisi - Cambridge MA, US
Mariana Bertoni - Medford MA, US
Bonna Newman - Cambridge MA, US
Assignee:

Massachusetts Institute of Technology - Cambridge MA
International Classification:

A61N 5/00
US Classification:

2504921, 2504922, 438795, 438796
Abstract:

A system for modifying dislocation distributions in semiconductor materials is provided. The system includes one or more vibrational sources for producing at least one excitation of vibrational mode having phonon frequencies so as to enhance dislocation motion through a crystal lattice.

Optoelectric Devices Fabricated With Defect Tolerant Semiconductors
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US Patent:

20160293858, Oct 6, 2016
Filed:

Apr 1, 2016
Appl. No.:

15/089443
Inventors:

- Cambridge MA, US
- Golden CO, US
Anthony Buonassisi - Cambridge MA, US
Vladan Stevanovic - Golden CO, US
David Ginley - Evergreen CO, US
Assignee:

Massachusetts Institute of Technology - Cambridge MA
National Renewable Energy Laboratory - Golden CO
International Classification:

H01L 51/00
H01L 31/032
H01L 51/42
Abstract:

Using fundamental electronic structure properties as an indicative of defect tolerance, a broad class of semiconductors containing partially oxidized cations can be identified, as well as several specific instances that can share these properties. These defect tolerant semiconductors can make a high-performance optoelectric device, for example, photovoltaic cells.

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Anthony Gc Buonassisi