Anthony L Chen

US Patent:

6344151, Feb 5, 2002

Filed:

Apr 27, 2000

Appl. No.:

09/559795

Inventors:

Anthony L. Chen - Oakland CA
John Holland - Santa Clara CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

G01N 2100

US Classification:

216 60, 438 7, 438 9, 20419213, 20419233

Abstract:

A gas purged viewport for endpoint detection in a gas phase processing chamber is provided which prevents contamination of an optical monitoring window by use of a purge gas flow. The purge gas purges the viewport and prevents deposition of byproducts and contaminants on the window which will adversely effect endpoint detection. The gas purge viewport includes a prechamber between the optically transparent window and the process chamber. The purge gas is passed through the prechamber and into the processing chamber to purge the window. The gas purge system may also be used to purge other parts such as sensors.

US Patent:

6770214, Aug 3, 2004

Filed:

Mar 30, 2001

Appl. No.:

09/820691

Inventors:

Duane Outka - Fremont CA
Yousun Kim - Santa Clara CA
Anthony Chen - Oakland CA
John Daugherty - Fremont CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C25F 304

US Classification:

216 67, 216 77, 134 11, 134 221

Abstract:

A method of reducing aluminum fluoride deposits in a plasma etch reactor. The deposits can be reduced during a cleaning step wherein the cleaning gas includes BCl energized into a plasma such that dissociated and undissociated BCl are formed and the undissociated BCl reacts with aluminum fluoride deposits and forms volatile products which are removed from the chamber. The introduction of Cl into the cleaning gas allows control of the degree of BCl dissociation. The deposits can also be reduced during etching of an aluminum layer by controlling the amount of fluorocarbon used in the main etch and adding BCl during the overetch. The cleaning step may be performed without a substrate in the chamber and may be followed by a conditioning step.

US Patent:

6777173, Aug 17, 2004

Filed:

Aug 30, 2002

Appl. No.:

10/232635

Inventors:

Anthony Chen - Pleasanton CA
Gladys So-Wan Lo - Fremont CA

Assignee:

LAM Research Corporation - Fremont CA

International Classification:

G03F 740

US Classification:

430329, 134 11, 134 12, 134 13, 216 67

Abstract:

H O vapor is used as a processing gas for stripping photoresist material from a substrate having a patterned photoresist layer previously used as an ion implantation mask, wherein the patterned photoresist layer is defined by a photoresist crust covering a bulk photoresist portion. Broadly speaking, the H O vapor is demonstrated to more efficiently strip the photoresist material having a cross-linked photoresist crust without causing the photoresist crust to pop and without causing the bulk photoresist to be undercut. Thus, H O vapor provides a safe, efficient, and economical processing gas for stripping photoresist material having a photoresist crust resulting from an ion implantation process.

US Patent:

7097744, Aug 29, 2006

Filed:

Jun 12, 2003

Appl. No.:

10/460865

Inventors:

Alan Barry Liu - Mountain View CA, US
Marc O. Schweitzer - San Jose CA, US
James Stephen Van Gogh - Sunnyvale CA, US
Michael Rosenstein - Sunnyvale CA, US
Jennifer L. Watia - Mountain View CA, US
Xinyu Zhang - Fremont CA, US
Yoichiro Tanaka - San Jose CA, US
John C. Forster - San Francisco CA, US
Anthony Chen - Los Altos Hills CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 14/35

US Classification:

20419212, 20429811

Abstract:

In one embodiment, a target alignment surface disposed on a target support mechanically engages a darkspace shield alignment surface disposed on a darkspace shield as the target is lodged into a chamber body. The respective alignment surfaces are shaped and positioned so that the darkspace shield is physically moved to a desired aligned position as the alignment surfaces engage each other. In this manner a darkspace shield may be directly aligned to a target within a semiconductor fabrication chamber to provide a suitable darkspace gap between the target and the darkspace shield.

US Patent:

7138067, Nov 21, 2006

Filed:

Sep 27, 2004

Appl. No.:

10/951552

Inventors:

Vahid Vahedi - Oakland CA, US
John Daugherty - Fremont CA, US
Harmeet Singh - Fremont CA, US
Anthony Chen - Pleasanton CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

B44C 1/22
H01L 21/00

US Classification:

216 67, 216 58, 216 59, 438706, 438710, 15634523

Abstract:

In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.

US Patent:

7578945, Aug 25, 2009

Filed:

Oct 17, 2006

Appl. No.:

11/582730

Inventors:

Vahid Vahedi - Oakland CA, US
John Daugherty - Fremont CA, US
Harmeet Singh - Fremont CA, US
Anthony Chen - Pleasanton CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

B44C 1/22
H01L 21/00

US Classification:

216 67, 216 58, 216 59, 438706, 438710, 15634523

Abstract:

In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.

US Patent:

7811409, Oct 12, 2010

Filed:

Nov 29, 2007

Appl. No.:

11/987419

Inventors:

Fred D. Egley - Sunnyvale CA, US
Michael S. Kang - San Francisco CA, US
Anthony L. Chen - Pleasanton CA, US
Jack Kuo - Pleasanton CA, US
Hong Shih - Walnut CA, US
Duane Outka - Fremont CA, US
Bruno Morel - Santa Clara CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C23C 16/00
C23F 1/00
H01L 21/306

US Classification:

15634534, 15634533, 15634535, 118723 ME

Abstract:

Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.

US Patent:

8290982, Oct 16, 2012

Filed:

Sep 27, 2007

Appl. No.:

11/863204

Inventors:

Ankarino Lara - San Francisco CA, US
Scott Bedard - San Francisco CA, US
Anthony D. Chen - Santa Monica CA, US
Shravan K. Goli - San Jose CA, US
Alexei Stoliartchouk - San Francisco CA, US

Assignee:

Yahoo! Inc. - Sunnyvale CA

International Classification:

G06F 17/30

US Classification:

707785

Abstract:

Computer-implemented methods for defining access to brand related assets are provided. One method includes generating a website that relates to a specific brand, where the specific brand is associated with a plurality of assets that are integrated with the website, and the plurality of assets are obtained from a number of disparate sources. The method also includes assigning each asset an identifier, where the identifier defines a relation of each asset to the specific brand and defining a dashboard access to the specific brand. The dashboard access is configured to identify a user privilege for accessing specific ones of the plurality of assets of the specific brand, the user privilege enabling one or more of viewing details of an existing asset, adding a new asset, and modifying an existing asset. The user privilege for accessing specific assets enables management of plurality of assets that are integrated with the website, and the management of the plurality of assets overriding control of the plurality of assets provided by the number of disparate sources.