Anthony Mastreani

US Patent:

6358439, Mar 19, 2002

Filed:

Jun 6, 1995

Appl. No.:

08/466562

Inventors:

Farid Youssif Aoude - Wappingers Falls NY
Lawrence Daniel David - Wappingers Falls NY
Renuka Shastri Divakaruni - Ridgefield CT
Shaji Farooq - Hopewell Junction NY
Lester Wynn Herron - Hopewell Junction NY
Hal Mitchell Lasky - Hyde Park NY
Anthony Mastreani - Hopewell Junction NY
Govindarajan Natarajan - Pleasant Valley NY
Vivek Madan Sura - Hopewell Junction NY
Rao Venkateswara Vallabhaneni - Wappingers Falls NY
Donald Rene Wall - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01B 122

US Classification:

252512

Abstract:

A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.

US Patent:

55127118, Apr 30, 1996

Filed:

Jun 10, 1994

Appl. No.:

8/258896

Inventors:

Lawrence D. David - Wappingers Falls NY
Shaji Farooq - Hopewell Junction NY
Anthony Mastreani - Hopewell Junction NY
Srinivasa S-N. Reddy - LaGrangeville NY
Rao V. Vallabhaneni - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H05K 109

US Classification:

174257

Abstract:

A copper-based paste for multilayer ceramic substrate vias and lines including copper particles as the majority constituent of the paste, a refractory metal additive selected from the group consisting of chromium, tantalum, and tungsten, and organic materials. This copper-based paste has particular applicability to the formation of vias and lines in ceramic packages wherein the vias and lines would have a composition principally of copper with additions of the refractory metal.

US Patent:

59254432, Jul 20, 1999

Filed:

Sep 10, 1991

Appl. No.:

7/758991

Inventors:

Farid Youssif Aoude - Wappingers Falls NY
Lawrence Daniel David - Wappingers Falls NY
Renuka Shastri Divakaruni - Ridgefield CT
Shaji Farooq - Hopewell Junction NY
Lester Wynn Herron - Hopewell Junction NY
Hal Mitchell Lasky - Hyde Park NY
Anthony Mastreani - Hopewell Junction NY
Govindarajan Natarajan - Pleasant Valley NY
Vivek Madan Sura - Hopewell Junction NY
Rao Venkateswara Vallabhaneni - Wappingers Falls NY
Donald Rene Wall - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01B 106

US Classification:

428209

Abstract:

A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.

US Patent:

61240419, Sep 26, 2000

Filed:

Mar 11, 1999

Appl. No.:

9/266338

Inventors:

Farid Youssif Aoude - Wappingers Falls NY
Lawrence Daniel David - Wappingers Falls NY
Renuka Shastri Divakaruni - Ridgefield CT
Shaji Farooq - Hopewell Junction NY
Lester Wynn Herron - Hopewell Junction NY
Hal Mitchell Lasky - Hyde Park NY
Anthony Mastreani - Hopewell Junction NY
Govindarajan Natarajan - Pleasant Valley NY
Vivek Madan Sura - Hopewell Junction NY
Rao Venkateswara Vallabhaneni - Wappingers Falls NY
Donald Rene Wall - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01B 106

US Classification:

428472

Abstract:

A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.

US Patent:

52777251, Jan 11, 1994

Filed:

May 11, 1992

Appl. No.:

7/881448

Inventors:

John Acocella - Hopewell Junction NY
Peter A. Agostino - Canaan NY
Arnold I. Baise - Wappingers Falls NY
Richard A. Bates - Wappingers Falls NY
Ray M. Bryant - Poughquag NY
Jon A. Casey - Poughkeepsie NY
David R. Clarke - Katonah NY
George Czornyj - Poughkeepsie NY
Allen J. Dam - Pine Plains NY
Lawrence D. David - Wappingers Falls NY
Renuka S. Divakaruni - Ridgefield CT
Werner E. Dunkel - LaGrangeville NY
Ajay P. Giri - Poughkeepsie NY
James N. Humenik - LaGrangeville NY
Steven M. Kandetzke - Poughkeepsie NY
Daniel P. Kirby - Poughkeepsie NY
John U. Knickerbocker - Hopewell Junction NY
Sarah H. Knickerbocker - Hopewell Junction NY
Anthony Mastreani - Hopewell Junction NY
Amy T. Matts - Poughkeepsie NY
Robert W. Nufer - Hopewell Junction NY
Charles H. Perry - Poughkeepsie NY
Salvatore J. Scilla - Marlboro NY
Mark A. Takacs - Poughkeepsie NY
Lovell B. Wiggins - Hopewell Junction NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C04B 3700
B05D 512

US Classification:

156 89

Abstract:

The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

US Patent:

51398524, Aug 18, 1992

Filed:

Mar 30, 1990

Appl. No.:

7/503492

Inventors:

Arnold I. Baise - Wappingers Falls NY
Ray M. Bryant - Poughquag NY
Jon A. Casey - Poughkeepsie NY
Allen J. Dam - Pine Plains NY
Werner E. Dunkel - LaGrangeville NY
James N. Humenik - LaGrangeville NY
Anthony Mastreani - Hopewell Junction NY
Robert W. Nufer - Hopewell Junction NY
Charles H. Perry - Poughkeepsie NY
Salvatore J. Scilla - Marlboro NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B32B 900

US Classification:

428209

Abstract:

The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

US Patent:

51355957, Aug 4, 1992

Filed:

Mar 30, 1990

Appl. No.:

7/503495

Inventors:

John Acocella - Hopewell Junction NY
Peter A. Agostino - Canaan NY
Arnold I. Baise - Wappingers Falls NY
Richard A. Bates - Wappingers Falls NY
Ray M. Bryant - Poughquag NY
Jon A. Casey - Poughkeepsie NY
David R. Clarke - Katonah NY
George Czornyj - Poughkeepsie NY
Allen J. Dam - Pine Plains NY
Lawrence D. David - Wappingers Falls NY
Renuka S. Divakaruni - Ridgefield CT
Werner E. Dunkel - LaGrangeville NY
Ajay P. Giri - Poughkeepsie NY
James N. Humenik - LaGrangeville NY
Steven M. Kandetzke - Poughkeepsie NY
Daniel P. Kirby - Poughkeepsie NY
John U. Knickerbocker - Hopewell Junction NY
Sarah H. Knickerbocker - Hopewell Junction NY
Anthony Mastreani - Hopewell Junction NY
Amy T. Matts - Poughkeepsie NY
Robert W. Nufer - Hopewell Junction NY
Charles H. Perry - Poughkeepsie NY
Salvatore J. Scilla - Marlboro NY
Mark A. Takacs - Poughkeepsie NY
Lovell B. Wiggins - Hopewell Junction NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C04B 3700

US Classification:

156 89

Abstract:

The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addresssed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

US Patent:

55257615, Jun 11, 1996

Filed:

Jun 6, 1995

Appl. No.:

8/466559

Inventors:

Lawrence D. David - Wappingers Falls NY
Shaji Farooq - Hopewell Junction NY
Anthony Mastreani - Hopewell Junction NY
Srinivasa S-N. Reddy - LaGrangeville NY
Rao V. Vallabhaneni - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H05K 109

US Classification:

174257

Abstract:

A copper-based paste for multilayer ceramic substrate vias and lines including copper particles as the majority constituent of the paste, a refractory metal additive selected from the group consisting of chromium, tantalum, and tungsten, and organic materials. This copper-based paste has particular applicability to the formation of vias and lines in ceramic packages wherein the vias and lines would have a composition principally of copper with additions of the refractory metal.