Antoine J Kahn

US Patent:

20070295941, Dec 27, 2007

Filed:

Jun 22, 2007

Appl. No.:

11/766904

Inventors:

Antoine Kahn - Princeton NJ, US
Calvin Chan - South Brunswick NJ, US
Stephen Barlow - Atlanta GA, US
Seth Marder - Atlanta GA, US

International Classification:

H01B 1/12

US Classification:

252500000

Abstract:

Electron transport material and methods of N-type doping the same are provided.

US Patent:

20110266529, Nov 3, 2011

Filed:

Apr 26, 2011

Appl. No.:

13/094608

Inventors:

Wei ZHAO - Gainesville FL, US
Yabing QI - Plainsboro NJ, US
Antoine KAHN - Princeton NJ, US
Seth MARDER - Atlanta GA, US
Stephen BARLOW - Atlanta GA, US

Assignee:

THE TRUSTEES OF PRINCETON UNIVERSITY - Princeton NJ
GEORGIA TECH RESEARCH CORPORATION - Atlanta GA

International Classification:

H01L 51/30

US Classification:

257 40, 257E51005

Abstract:

Organic electronic devices comprising “remotely” doped materials comprising a combination of at least three layers. Such devices can include “remotely p-doped” structures comprising: a channel layer comprising at least one organic semiconductor channel material; a dopant layer, which comprises at least one p-dopant material and optionally at least one organic hole transport material; and a spacer layer disposed between and in electrical contact with both the channel layer and the dopant layer, comprising an organic semiconducting spacer material; or alternatively can include “remotely n-doped” structures comprising a combination of at least three layers: a channel layer comprising at least one organic semiconductor channel material; a dopant layer which comprises at least one organic electron transport material doped with an n-dopant material; and a spacer layer disposed between and in electrical contact with the channel layer and the dopant layer, comprising an organic semiconducting spacer material. Such devices include “remotely doped” field effect transistors comprising the doped structures described above.

US Patent:

20140231765, Aug 21, 2014

Filed:

Nov 27, 2013

Appl. No.:

14/092523

Inventors:

- Princeton NJ, US
- Atlanta GA, US
Antoine KAHN - Princeton NJ, US
Seth R. MARDER - Atlanta GA, US
Stephen BARLOW - Atlanta GA, US

Assignee:

The Trustees of Princeton University - Princeton NJ
Georgia Tech Research Corporation - Atlanta GA

International Classification:

H01L 51/00
H01L 51/05

US Classification:

257 40, 438 99

Abstract:

Organic electronic devices comprising “remotely” doped materials comprising a combination of at least three layers. Such devices can include “remotely p-doped” structures comprising: a channel layer comprising at least one organic semiconductor channel material; a dopant layer, which comprises at least one p-dopant material and optionally at least one organic hole transport material; and a spacer layer disposed between and in electrical contact with both the channel layer and the dopant layer, comprising an organic semiconducting spacer material; or alternatively can include “remotely n-doped” structures comprising a combination of at least three layers: a channel layer comprising at least one organic semiconductor channel material; a dopant layer which comprises at least one organic electron transport material doped with an n-dopant material; and a spacer layer disposed between and in electrical contact with the channel layer and the dopant layer, comprising an organic semiconducting spacer material. Such devices include “remotely doped” field effect transistors comprising the doped structures described above.

US Patent:

20140131868, May 15, 2014

Filed:

May 16, 2012

Appl. No.:

14/117965

Inventors:

Bernard Kippelen - Decatur GA, US
Canek Fuentes-Hernandez - Atlanta GA, US
Yinhua Zhou - Atlanta GA, US
Antoine Kahn - Princeton NJ, US
Jens Meyer - Princeton NJ, US
Jae Won Shim - Atlanta GA, US
Seth R. Marder - Atlanta GA, US

Assignee:

PRINCETON UNIVERSITY - Princeton NJ
GEORGIA TECH RESEARCH CORPORATION - Atlanta GA

International Classification:

H01L 29/45
H01L 21/283

US Classification:

257741, 438652

Abstract:

According to an exemplary embodiment of the invention, systems and methods are provided for producing low work function electrodes. According to an exemplary embodiment, a method is provided for reducing a work function of an electrode. The method includes applying, to at least a portion of the electrode, a solution comprising a Lewis basic oligomer or polymer; and based at least in part on applying the solution, forming an ultra-thin layer on a surface of the electrode, wherein the ultra-thin layer reduces the work function associated with the electrode by greater than 0.5 eV. According to another exemplary embodiment of the invention, a device is provided. The device includes a semiconductor; at least one electrode disposed adjacent to the semiconductor and configured to transport electrons in or out of the semiconductor.