Anton K Barty from Berkeley, CA, age 54

Method For The Manufacture Of Phase Shifting Masks For Euv Lithography
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US Patent:

20040062999, Apr 1, 2004
Filed:

Sep 27, 2002
Appl. No.:

10/256454
Inventors:

Daniel Stearns - Los Altos CA, US
Donald Sweeney - San Ramon CA, US
Paul Mirkarimi - Sunol CA, US
Anton Barty - Livermore CA, US
Assignee:

The Regents of the University of California
International Classification:

G03F001/00
US Classification:

430/005000, 430/296000
Abstract:

A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.

Method For Repairing Mask-Blank Defects Using Repair-Zone Compensation
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US Patent:

20060234135, Oct 19, 2006
Filed:

Apr 18, 2005
Appl. No.:

11/109026
Inventors:

Stefan Hau-Riege - Fremont CA, US
Donald Sweeney - San Ramon CA, US
Anton Barty - Livermore CA, US
Paul Mirkarimi - Sunol CA, US
Daniel Stearns - Los Altos Hills CA, US
International Classification:

G03C 5/00
G21K 5/00
G03F 1/00
US Classification:

430005000, 430322000, 378035000
Abstract:

A method for repairing mask-blank defects uses repair-zone compensation. Local disturbances are compensated over the post-defect-repair repair-zone by altering a portion of the absorber pattern on the surface of the mask blank. This enables the fabrication of defect-free (since repaired) X-ray Mo—Si multilayer mirrors. Repairing Mo—Si multilayer-film defects on mask blanks is a key for the commercial success of EUVL. It is known that particles are added to the Mo—Si multilayer film during the fabrication process. There is a large effort to reduce this contamination, but results are not sufficient, and defects continue to be a major mask yield limiter.

Anton K Barty