Arlene Williams " Arlene Williams " is the host of Cornerstone Television's show " At Home With Arlene Williams ".
Skills & Activities:
Achieved status:
Television personality
Name / Title
Company / Classification
Phones & Addresses
Arlene Williams Manager
TECHNOLOGY WITH SILICONES, INC Mfg Industrial Organic Chemicals
Joseph A Valade POB 631 1050 ELIZABETH ST EXT, Mechanicville, NY 12118 PO Box 631, Mechanicville, NY 12118 1050 Elizabeth St Ext, Mechanicville, NY 12118 PO Box 631, Mechanicville, NY 12118 5186646135
Arlene R. Williams Medical Assistant
Lisa Mulligan Medical Doctor's Office
175 1 Pl NW, Bellevue, WA 98027 PO Box 1714, Bellevue, WA 98027
DAVITA DIALYSIS Walnut Creek, CA Jan 2007 to Sep 2009 Group Facility AdministratorDAVITA DIALYSIS, OLYMPIC View Dialysis Center (OVDC) Seattle, WA Sep 2002 to Dec 2007 Facility AdministratorSAN LEANDRO VETERINARY HOSPITAL San Leandro, CA Jan 2000 to Aug 2002 Contractual Consultant/Acting AdministratorGENESIS HEALTH CARE Tacoma, WA Feb 1997 to Jan 2000 Project Management/Staff DeveloperSANTA BARBARA COLLEGE Santa Maria, CA Sep 1990 to Jan 1997 Director of Medical Programs
Education:
Chapman University Orange, CA Jan 1997 to Jan 1998 Master of Arts in Organizational Leadership/BusinessChapman University Orange, CA Jan 1997 to Jan 1998 Graduate Certificate: in Human ResourcesAllan Hancock Community College Santa Maria, CA Jan 1978 to Jan 1979 AA in NursingChapman University Orange, CA Bachelor of Science in Health Management/Administrations
Manjin J. Kim - Schenectady NY Bruce F. Griffing - Schenectady NY Ronald H. Wilson - Schenectady NY Arlene G. Williams - Scotia NY Robert W. Stoll - Schenectady NY
Assignee:
General Electric Company - Schenectady NY
International Classification:
H01L 21283
US Classification:
437228
Abstract:
Molybdenum gate electrode material is provided with an upper layer of molybdenum nitride which acts to prevent deposition of source and drain contact metal by selective chemical vapor deposition (CVD). The nitride layer also provides an improved mask for ion implantation process steps. This results in an FET structure exhibiting a high degree of planarity which is desirable for multilevel device fabrication.
Organoaluminosiloxane Coating Compositions And Coated Substrate
A method is provided for applying an aluminosilicate coating onto a substrate. For example, a superalloy is treated with an organic solvent solution of an aluminosiloxane having an Al/Si ratio having a value of 1 to 5 inclusive which is heated to an elevated temperature.
Organoaluminosiloxane Coating Compositions And Coated Substrate
A method is provided for applying an aluminosilicate coating onto a substrate. For example, a superalloy is treated with an organic solvent solution of an aluminosiloxane having an Al/Si ratio having a value of 1 to 5 inclusive which is heated to an elevated temperature.