Arthur G Foyt

US Patent:

49260839, May 15, 1990

Filed:

Dec 13, 1988

Appl. No.:

7/283624

Inventors:

Sears W. Merritt - Glastonbury CT
Robert N. Sacks - Glastonbury CT
Arthur G. Foyt - Glastonbury CT

Assignee:

United Technologies Corporation - Hartford CT

International Classification:

H01L 4108

US Classification:

310313R

Abstract:

A novel heterojunction acoustic charge transport device includes a transducer fabricated on a GaAs/AlGaAs heterojunction material that launches surface acoustic waver (SAW) along a transport channel. The device is characterized by a photodiode configured adjacent to the channel on the substrate to receive a modulated optical beam. An electrical signal equivalent is provided to a Schottky electrode at the end of the transport channel modulating the charge propagated by the surface acoustic wave. The modulated signal is output at a distal end of the transport channel.

US Patent:

52455041, Sep 14, 1993

Filed:

Aug 6, 1992

Appl. No.:

7/906598

Inventors:

Robert H. Bullis - Avon CT
Arthur G. Foyt - Glastonbury CT
James L. Swindal - East Hampton CT

Assignee:

United Technologies Corporation - Hartford CT

International Classification:

H01G 700
G01L 912

US Classification:

3612834

Abstract:

Manufacturing hinged diaphragms for semiconductor sensors (e. g. , accelerometers, pressure transducers, etc. ), from a SIMOX wafer (W, FIG. 3 A), in which the internal, insulating, silicon dioxide (SiO. sub. 2) layer (3) is used as an etch stop in removing silicon from the underside of the wafer by etching with an appropriately selective etch, producing the reduced thickness, peripheral "hinge" areas (9; FIG. 3 A to FIG. 3 B), with the exposed part of the silicon dioxide layer being removed in a subsequent etching step (FIG. 3 B to FIG. 3C) using a different, selective etch. This produces a single layer, single-crystal, silicon "hinge" (9'; FIG. 3C) of uniform, continuous material, enhancing the linearity of diaphragm movement during use and the sensor's sensitivity and accuracy. (See FIG. 4 for methodological steps.

US Patent:

49300423, May 29, 1990

Filed:

Feb 28, 1989

Appl. No.:

7/317240

Inventors:

Walter J. Wiegand - Glastonbury CT
James L. Swindal - East Hampton CT
Richard E. Swarts - Simsbury CT
Robert H. Bullis - Avon CT
Mario T. Lopiccolo - Southington CT
Daniel H. Grantham - Glastonbury CT
Arthur G. Foyt - Glastonbury CT

Assignee:

United Technologies - Hartford CT

International Classification:

H01G 700
G01P 1508

US Classification:

361280

Abstract:

A micromachined three-plate capacitive accelerometer incorporates hinges attached to top and bottom surfaces of the proof mass that are symmetric about X and Y axes and also about diagonal axes; passageways for gas film damping in the fixed members that do not affect the capacitance to any significant degree; and provision for independently selecting two of the parameters sensitivity, capacitance and maximum acceleration.

US Patent:

53750349, Dec 20, 1994

Filed:

Dec 2, 1993

Appl. No.:

8/161335

Inventors:

Arthur G. Foyt - Glastonbury CT
Paul L. Provenzano - West Hartford CT
James L. Swindal - Easthampton CT
Robert A. Wagner - Manchester CT

Assignee:

United Technologies Corporation - Hartford CT

International Classification:

H01G 700

US Classification:

3612834

Abstract:

A silicon capacitive pressure sensor is disclosed having a silicon diaphragm and a silicon substrate arranged in parallel and separated by a glass dielectric spacer. The glass is deposited onto a surface of the substrate using an ion milling machine. The sensor further includes a transition piece attached to a second layer of glass insulator disposed between the silicon diaphragm and the transition piece. The transition piece has a throughbore formed therein for applying a fluid to a surface of the silicon diaphragm, the fluid having a pressure desired to be measured by the sensor. The glass disposed between the diaphragm and the transition piece is deposited onto the transition piece using the ion milling process.