Arvind Shashi Kumar

US Patent:

6668335, Dec 23, 2003

Filed:

Aug 31, 2000

Appl. No.:

09/653643

Inventors:

Scott E. Breach - Sunnyvale CA
John Eble - Worcester MA
Arvind Kumar - Boston MA
Richard E. Kessler - Shrewsbury MA
Darrel Donaldson - Lancaster MA
David W. Hartwell - Bolton MA

Assignee:

Hewlett-Packard Company, L.P. - Houston TX

International Classification:

G06F 104

US Classification:

713600, 709237, 716 13

Abstract:

A system comprising a communications link between processors configured to transmit packets between transmitting and receiving processors. The communications link comprises a conduction path for each bit in the packet and the paths are grouped into separate bundles and routed along different paths. A forwarded clock signal is sent with each bundle. The processors operate with a clock frequency that is roughly three times as fast as the clock frequency of the forwarded clock signal. Data is transmitted on both rising and falling edges of the clock. The receiving processor comprises a recovery circuit to which it pulls the asynchronous data into the processor clock domain. The recovery circuit comprises a delay locked loop circuit configured to create a delayed copy of the clock signal with clock edges that are aligned with the center of the data window for the transmitted data.

US Patent:

20120079160, Mar 29, 2012

Filed:

Sep 24, 2010

Appl. No.:

12/890252

Inventors:

VENKATRAMAN IYER - Austin TX, US
Arvind Kumar - Brookline MA, US
Santanu Chaudhuri - Mountain View CA, US
Darren S. Jue - Sunnyvale CA, US
Dennis R. Halicki - Hillsboro OR, US

International Classification:

G06F 13/36

US Classification:

710311

Abstract:

A method and system to adapt communication links statically and/or dynamically to their individual link conditions on a platform. The communicatively coupled devices have logic to adapt one or more settings of a respective one or more communication links with another device based at least in part on a respective metric of received data patterns from the respective one or more communication links. The communicatively coupled devices in the platform have a back channel to allow feedback or information to be sent from one receiving device to a transmitting device in one embodiment of the invention.

US Patent:

20220417784, Dec 29, 2022

Filed:

Jun 28, 2021

Appl. No.:

17/359760

Inventors:

- Basking Ridge NJ, US
Jaime Lugo - Boca Raton FL, US
Alexander Zerzghi - Branchburg NJ, US
Arvind Kumar - Princeton NJ, US

International Classification:

H04W 28/02
H04W 52/24
H04B 17/391
H04B 17/336
H04W 24/10
H04W 16/32

Abstract:

Systems and methods model earth stations and other captive terrestrial sites as simulated cell sites in a radio access network (RAN) to identify potential cellular network interferers with the earth stations. A computing device selects an earth station within a geographic area of a RAN segment and model the earth station as a cell within the RAN segment, wherein the modeling creates a simulated earth station cell. The computing device obtains sector carrier data for cells in the RAN segment and scores, based on the sector carrier data, neighboring cells to the simulated earth station cell. The scoring indicates a level of potential interference of the neighboring cells with the earth station based on geo-spatial relevance. The computing device identifies projected mobility interference in neighboring cells to the earth station and provides prioritization recommendations for interference mitigation for the earth station based on the scoring and the identifying.

US Patent:

20220285362, Sep 8, 2022

Filed:

Feb 17, 2022

Appl. No.:

17/674353

Inventors:

- Santa Clara CA, US
Arvind KUMAR - Austin TX, US
Sony VARGHESE - Manchester-by-the-Sea MA, US
Chang Seok KANG - Santa Clara CA, US
Sung-Kwan KANG - San Jose CA, US
Tomohiko KITAJIMA - San Jose CA, US

International Classification:

H01L 27/108
G11C 5/10

Abstract:

Methods for forming three-dimensional dynamic random-access memory (3D DRAM) structures that leverage a grid pattern of high aspect ratio holes to form subsequent features of the 3D DRAM. The method may include depositing alternating layers of crystalline silicon (c-Si) and crystalline silicon germanium (c-SiGe) using an heteroepitaxy process onto a substrate and HAR etching of a pattern of holes into the substrate. The holes configured to provide chemistry access to laterally etch or deposit materials to form 3D DRAM features without requiring subsequent HAR etching of holes to form the 3D DRAM features.

US Patent:

20220199627, Jun 23, 2022

Filed:

Dec 15, 2021

Appl. No.:

17/551903

Inventors:

- Santa Clara CA, US
Arvind KUMAR - Santa Clara CA, US
Sony VARGHESE - Manchester MA, US

International Classification:

H01L 27/108

Abstract:

Examples herein relate to three-dimensional (3D) dynamic random access memory (DRAM) devices and replacement channel processes for fabricating 3D DRAM devices. In an example, a gate dielectric layer is formed on a sacrificial material, and a gate electrode is formed on the gate dielectric layer. After the gate electrode is formed, the sacrificial material is removed and replaced by a semiconductor material. A channel region of a device (e.g., a transistor) that includes the gate dielectric layer and gate electrode is formed in the semiconductor material. The channel region can be vertical or horizontal with respect to a main surface of a substrate on which the device is formed. A capacitor can be formed, such as before or after the semiconductor material is formed, and is electrically connected to the semiconductor material. The device and the capacitor together can form at least part of a 3D DRAM cell.

US Patent:

20210312972, Oct 7, 2021

Filed:

Jun 16, 2021

Appl. No.:

17/349854

Inventors:

Arvind A. Kumar - Palo Alto CA, US
James Alexander McCall - Portland OR, US
Bill H. Nale - Livermore CA, US
John R. Goles - Folsom CA, US

International Classification:

G11C 11/4076
G11C 11/4093
G11C 11/4074
G11C 11/4072

Abstract:

A method, apparatus and system. The method includes: performing one or more training iterations to tune a target clock signal frequency to be applied at a memory device, each of the one or more training iterations including: causing a modified clock signal frequency to be applied at the memory device; and decoding a quality feedback message from the memory device including an indication of a performance of the clock signal frequency at the memory device; and in response to a determination that the performance of the clock signal frequency falls within a target performance range of the memory device and that the clock signal frequency is below the target clock signal frequency, performing a subsequent training iteration of the one or more training iterations, and otherwise causing application at the memory device, during a memory operation, of a highest clock signal frequency corresponding to a training iteration for which performance of the clock signal was within the target performance range.

US Patent:

20180095927, Apr 5, 2018

Filed:

Nov 22, 2017

Appl. No.:

15/821401

Inventors:

- Santa Clara CA, US
Darren S. Jue - Sunnyvale CA, US
Rahul C. Shah - San Francisco CA, US
Arvind A. Kumar - Brookline MA, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

G06F 13/42
H04L 12/933
G06F 9/30
G06F 9/445
G06F 9/46
G06F 13/40
H04L 12/46
H04L 12/741

Abstract:

A serial data link is to be adapted during initialization of the link. Adaptation of the link is to include receiving a pseudorandom binary sequence (PRBS) from a remote agent, analyzing the PRBS to identify characteristics of the data link, and generating metric data describing the characteristics.

US Patent:

20170285774, Oct 5, 2017

Filed:

Apr 1, 2016

Appl. No.:

15/089290

Inventors:

Kunjal Parikh - San Jose CA, US
Thomas Agung Nugraha - Tokyo, JP
Arvind Kumar - Beaverton OR, US
Akihiro Takagi - San Mateo CA, US
John F. Jacobs - San Jose CA, US

International Classification:

G06F 3/0354
G06F 3/01
G06F 3/16
G06F 3/038

Abstract:

An active stylus enables an electronic device to provide a user-friendly user input. The active stylus uses various sensors and feedback mechanisms to characterize or simulate the audible and haptic feedback associated with various writing instruments. The sensors capture pressure, speed, vibration, sound, and other characteristics of using a specific writing instrument on a given surface. This enables the active stylus to simulate the writing instrument accurately while avoiding increased haze and optical distortions due to etching or engineered film.