- GRAND CAYMAN, KY FUAD AL-AMOODY - Rexford NY, US ASLI SIRMAN - Malta NY, US JOSEPH KYALO KASSIM - Rio Rancho NM, US HUI ZANG - Guilderland NY, US BHARAT V. KRISHNAN - Mechanicville NY, US
International Classification:
H01L 23/532 H01L 23/522 H01L 21/768
Abstract:
A semiconductor device structure is provided that includes a dielectric layer and a barrier layer having at least two layers of two dimensional materials on the dielectric layer, wherein each layer is made of a different two dimensional material.
Defect Free Silicon Germanium (Sige) Epitaxy Growth In A Low-K Spacer Cavity And Method For Producing The Same
- Grand Cayman, KY Hamed PARVANEH - Clifton Park NY, US Mira PARK - Clifton Park NY, US Annie LEVESQUE - Saratoga Springs NY, US Yinxiao YANG - Troy NY, US Hongyi MI - Clifton Park NY, US Asli SIRMAN - Malta NY, US
International Classification:
H01L 21/02 H01L 21/768 H01L 21/311
Abstract:
A method of cleaning a low-k spacer cavity by a low energy RF plasma at a specific substrate temperature for a defect free epitaxial growth of Si, SiGe, Ge, III-V and III-N and the resulting device are provided. Embodiments include providing a substrate with a low-k spacer cavity; cleaning the low-k spacer cavity with a low energy RF plasma at a substrate temperature between room temperature to 600 C.; and forming an epitaxy film or a RSD in the low-k spacer cavity subsequent to the low energy RF plasma cleaning.