Barry C Arkles

US Patent:

6346477, Feb 12, 2002

Filed:

Jan 9, 2001

Appl. No.:

09/757201

Inventors:

Alain E. Kaloyeros - Slingerlands NY
Ana Londergan - Campbell CA
Barry Arkles - Dresher PA

Assignee:

Research Foundation of SUNY - New York - Albany NY

International Classification:

H01L 2144

US Classification:

438680, 438682, 438683

Abstract:

A process for the preparation of cobalt disilicide films comprises chemical vapor deposition (CVD) of cobalt from cobalt tricarbonyl nitrosyl as cobalt source precursor, capping the cobalt layer and annealing to form epitaxial cobalt disilicide on the silicon substrate.

US Patent:

6410770, Jun 25, 2002

Filed:

Feb 7, 2001

Appl. No.:

09/779025

Inventors:

Barry C. Arkles - Dresher PA
Youlin Pan - Langhorne PA
Gerald Larson - Newtown PA

Assignee:

Gelest, Inc. - Tullytown PA

International Classification:

C07F 708

US Classification:

556466, 556478, 556487

Abstract:

This invention includes a process for producing an alkylsilane, comprising reducing an alkoxysilane in the presence of an alkali metal hydride in the presence of a high boiling solvent. The alkylsilane has a boiling point lower than the boiling point of the solvent, which is typically diglyme. This invention also includes a chloride-free alkylsilane formed from the reduction of an alkoxysilane in the presence of an alkali metal hydride. The alkylsilane produced according to the process of the present invention may be useful in microelectronic applications, such as in the production of chloride-free low dielectric constant materials which may be produced by the chemical vapor deposition of such silanes.

US Patent:

6586056, Jul 1, 2003

Filed:

Feb 19, 2002

Appl. No.:

10/079746

Inventors:

Barry C. Arkles - Dresher PA
Alain E. Kaloyeros - Slingerlands NY

Assignee:

Gelest, Inc. - Tullytown PA

International Classification:

C23C 1634

US Classification:

427582, 427583, 42725515, 42725517, 427255393, 427255394, 4272557

Abstract:

A method for near atmospheric pressure chemical vapor deposition of a silicon based film onto a substrate includes introducing into a deposition chamber at about atmospheric pressure: (i) a substrate; (ii) an iodosilane precursor in the vapor state having at least three iodine atoms bound to silicon; and (iii) at least one reactant gas; and maintaining a deposition temperature within the chamber from about 250Â C. to about 650Â C. for a period of time sufficient to deposit a silicon based film on the substrate. Silicon based films formed by near atmospheric pressure chemical vapor deposition using an iodosilane precursor in a vapor state and methods for forming silicon-based films using ultraviolet assisted chemical vapor deposition are also included.

US Patent:

6642403, Nov 4, 2003

Filed:

Nov 6, 2002

Appl. No.:

10/288815

Inventors:

Barry C. Arkles - Dresher PA
Youlin Pan - Langhorne PA
Gerald L. Larson - Newtown PA

Assignee:

Gelest, Inc. - Morrisville PA

International Classification:

C07F 704

US Classification:

556451, 556452, 556453, 556454

Abstract:

This invention relates to a series of fluoroalkylsilane compounds of formula I. These compounds are silylation reagents which enhance the solubility of the silylated products in fluorocarbon solvents for preferred use in fluorous phase synthesis. Use of these compounds protects fragile hydrogen groups and also provides for the straightforward separation of the ultimate reaction products though fluorous phase extraction. This invention also relates to a two-step process for making compounds of formula I. The process comprises reacting an alkyldialkoxysilane with a perfluoroalkyl-substituted silane to produce a perfluoroalkyl-substituted dialkylsiloxyalkylsilane intermediate; and reacting the intermediate with halogen.

US Patent:

6770726, Aug 3, 2004

Filed:

Dec 28, 1998

Appl. No.:

09/221554

Inventors:

Barry C. Arkles - Dresher PA
Donald H. Berry - Dresher PA

Assignee:

Gelest, Inc. - Morrisville PA
University of Pennsylvania - Philadelphia PA

International Classification:

C08G 7724

US Classification:

528 42, 528 10, 528 39, 528 32

Abstract:

Silsesquioxane polymers that are useful for preparing SiO -rich ceramic coatings are obtained as the polymeric reaction products from the hydrolysis and condensation of organosilanes having a -substituted alkyl group. A preferred silsesquioxane polymer is the polymeric reaction product obtained from -chloroethyltrichlorosilane. More preferred silsesquioxones are those with non-halogenated alkyl groups, such as the -acetoxyethyl- and -hydroxyethyl-silsesquioxones. Coating compositions containing such silsesquioxane polymers dissolved in organic solvent may be applied to a substrate and converted to SiO -rich ceramic thin layers by evaporating the solvent and heating the coated substrate at moderate temperatures.

US Patent:

6800777, Oct 5, 2004

Filed:

May 3, 2002

Appl. No.:

10/138746

Inventors:

Barry C. Arkles - Dresher PA
Gerald L. Larson - Newtown PA
Youlin Pan - Langhorne PA

Assignee:

Gelest, Inc. - Morrisville PA

International Classification:

C07F 702

US Classification:

556400, 556430, 556450, 556465, 556489

Abstract:

The invention includes a trialkylsilane comprising a hydrocarbon backbone including one to ten carbon atoms; a terminal trialkylsilyl moiety having at least two alkyl groups independently comprising at least six carbon atoms; and a terminal silyl moiety that has at least one hydrolyzable group bound to a silicon of the silyl moiety. At least one of the alkyl groups of the trialkylsilyl moiety may substituted with at least one halogen, and is preferably a perfluoroalkyl group. The invention also provides methods of producing the trialysilane and substrates including the trialkysilane of the invention, as well as columns and substrates for use in chromatographic applications.

US Patent:

6881849, Apr 19, 2005

Filed:

Jul 12, 2002

Appl. No.:

10/193882

Inventors:

Barry C. Arkles - Dresher PA, US
Youlin Pan - Langhorne PA, US

Assignee:

Gelest, Inc. - Morrisville PA

International Classification:

C07F007/02
B01D012/00

US Classification:

549 4, 516200

Abstract:

The invention includes a sulfolane functional silane comprising a sulfolane ring, an alkoxy group, a hydrocarbon backbone, and a silyl moiety. An oxygen atom of the alkoxy group is bound to the sulfolane ring, and the hydrocarbon backbone has one to fifty carbon atoms and is bound by its first terminal carbon atom to a carbon of the alkoxy group and by its second terminal carbon atom to the silicone atom of the silyl moiety. The silyl moiety comprises at least one hydrolyzable group and/or a non-hydrolyzable group that is a substituted or unsubstituted siloxane group. A method to stabilize a silane solution is described and includes adding the sulfolane functional silane of the invention to a solution containing silane hydrosylates.

US Patent:

6884466, Apr 26, 2005

Filed:

Apr 28, 2003

Appl. No.:

10/425823

Inventors:

Alain E. Kaloyeros - Slingerlands NY, US
Barry C. Arkles - Dresher PA, US

Assignee:

Gelest, Inc. - Morrisville PA
The Research Foundation of State University of New York - Albany NY

International Classification:

C23C016/34

US Classification:

427255392, 427255394, 438680, 438685

Abstract:

Processes for producing tungsten nitride and tungsten nitride films are provided in which a tungsten carbonyl compound and a nitrogen-containing reactant gas are reacted at a temperature below about 600 C. Tungsten nitride precursors are also included which comprise a tungsten carbonyl compound capable of forming a tungsten nitride film in the presence of a nitrogen-containing reactant gas at a temperature of less than about 600 C. A process for forming a film by atomic layer deposition is also provided which includes introducing a substrate having a surface into a deposition chamber and heating the substrate to a temperature sufficient to allow adsorption of a tungsten source precursor or an intermediate thereof, and thereafter sequentially introducing by pulsing: a tungsten source precursor which is absorbed as a monolayer, a purging inert gas, a nitrogen-containing gas for reacting with the monolayer to form a first tungsten nitride layer on the substrate surface, and an inert purging gas, and repeating the sequence to form a film of desired thickness.