Barry A Miller

US Patent:

7020168, Mar 28, 2006

Filed:

Jul 1, 2003

Appl. No.:

10/611221

Inventors:

Pietro Arturo Giovanni Bernasconi - Eatontown NJ, US
Barry Irwin Miller - Middletown NJ, US
Nicholas J. Sauer - Hamilton Square NJ, US
Lawrence Warren Stulz - Neptune NJ, US
Dries Van Thourhout - Holmdel NJ, US
Weiguo Yang - East Windsor NJ, US
Liming Zhang - Marlboro NJ, US

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

H01S 3/10

US Classification:

372 20, 372 23, 385 43, 385 15, 385 20, 385 21

Abstract:

A high power multi-frequency laser includes a laser cavity defined by reflective elements, a frequency routing device in the cavity comprising a plurality of frequency selective pathways, a first set of optical amplifiers optically coupled to a first end of the frequency routing device, and a second set of optical amplifiers optically coupling a second end of the frequency routing device and a first one of the reflective elements. The high power multi-frequency laser further includes a power combiner. The power combiner is optically coupled to the first set of optical amplifiers and a second one of the reflective elements and combines the outputs of the first set of optical amplifiers such that a common output for the multi-frequency laser is provided. The common output of the present invention provides a single output from the multi-frequency laser having a high output coupling efficiency.

US Patent:

20050126014, Jun 16, 2005

Filed:

Nov 18, 2004

Appl. No.:

10/991761

Inventors:

Mohammed Yamin - Denville NJ, US
Barry Miller - Garden City NY, US

International Classification:

B26B003/06

US Classification:

030254000

Abstract:

The present invention relates generally to the field of cutting devices and specifically relates to cutting tools comprising a locking means in the form of an integral screw. In particular, the invention relates to a cutting device comprising an integral spring, capable of facilitating opening of the blades. According to one embodiment of this invention, the device comprises a locking screw and spring in scissors and nippers. According to an embodiment of this invention, the blades are self-sharpening.

US Patent:

42735947, Jun 16, 1981

Filed:

Oct 5, 1979

Appl. No.:

6/082002

Inventors:

Adam Heller - Bridgewater NJ
Harry J. Leamy - Summit NJ
Barry Miller - New Providence NJ
Ronald J. Nelson - Berkeley Heights NJ
Bruce A. Parkinson - Ames IA

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

H01L 3104
H01L 21306

US Classification:

148 333

Abstract:

Semiconductor devices using chemically treated n-type GaAs have greatly reduced surface recombination velocities. A preferred embodiment uses fractional monolayers of ruthenium on the GaAs surface.

US Patent:

40457257, Aug 30, 1977

Filed:

Mar 8, 1976

Appl. No.:

5/665091

Inventors:

Barry Miller - Murray Hill NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

G01N 2742

US Classification:

324 30B

Abstract:

In an electrochemical cell passing a constant current, an electrode rotating asymmetrically with respect to a fixed electrode produces an ac voltage, having a component at the rotational frequency, between the rotating and fixed electrodes because the interelectrode distance and dc solution resistance between the electrodes vary. When this electrode is used in an operating two electrode cell, e. g. , a plating bath, the ac voltage may be used to map the spatial current distribution. Measurements of solution conductivity may also be made.

US Patent:

40826023, Apr 4, 1978

Filed:

May 2, 1977

Appl. No.:

5/792580

Inventors:

Adam Heller - Bridgewater NJ
Barry Miller - Murray Hill NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

H01L 21306

US Classification:

156627

Abstract:

A quality control technique is based on the observation that trapping centers contribute to inefficient operation of junction devices. Devices are irradiated by a first radiation source of intensity sufficient to populate traps and a second radiation source of varying wavelength. Trapping centers are detected by a deviation from the expected photovoltaic output-incident wavelength relationship. Such "structure" is utilized as the basis for altering production conditions to minimize currents of such centers. While the procedure is of general applicability, it is particularly suitable as applied to photovoltaic cells.

US Patent:

51713730, Dec 15, 1992

Filed:

Jul 30, 1991

Appl. No.:

7/738005

Inventors:

Arthur F. Hebard - Bernardsville NJ
Barry Miller - Murray Hill NJ
Joseph M. Rosamilia - Berkeley Heights NJ
William L. Wilson - Somerville NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 31028

US Classification:

136252

Abstract:

It has been found that fullerenes exhibit photoelectronic behavior such as photoconductivity or photovoltaic properties. Such behavior allows the fabrication of a variety of devices, such as solar cells and the use of various light-induced processes, such as the generation of a current by illumination of appropriate fullerene interfaces.

US Patent:

52981177, Mar 29, 1994

Filed:

Jul 19, 1993

Appl. No.:

8/094650

Inventors:

Karrie J. Hanson - Westfield NJ
Barry Miller - Murray Hill NJ
Barbara J. Sapjeta - Parsippany NJ
Akshay V. Shah - Berkeley Heights NJ
Ken M. Takahashi - Warren NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 2100

US Classification:

156666

Abstract:

The linewidth in patterns produced by etching copper layers is more easily maintained using a specific etching medium. In particular, this medium includes aqueous hydrofluoric acid, copper chloride, and an additional chloride salt. The etching medium is also particularly useful for bilayer metal constructions such as the copper/titanium structure found in many multichip modules.

US Patent:

41599195, Jul 3, 1979

Filed:

Jan 16, 1978

Appl. No.:

5/869779

Inventors:

James H. McFee - Colts Neck NJ
Barry I. Miller - Middletown NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

H01L 21203

US Classification:

148175

Abstract:

An improved method of forming ternary and quaternary epitaxial films by molecular beam epitaxy involves controlling precisely the ratio of concentrations of two alloying elements in the final compound by heating predetermined independently adjustable quantities of two or more alloying elements in the same oven.