Benjamin H M Cook

US Patent:

20120087503, Apr 12, 2012

Filed:

Oct 6, 2011

Appl. No.:

13/267557

Inventors:

Clarke S. Watson - San Carlos CA, US
Benjamin W. Cook - San Francisco CA, US
Axel D. Berny - San Francisco CA, US
Jason A. Trachewsky - Menlo Park CA, US

Assignee:

Passif Semiconductor Corp. - San Mateo CA

International Classification:

H04R 5/02
H04R 5/00

US Classification:

381 23, 381307

Abstract:

A wireless multi-channel audio system including an audio source with a wireless transceiver configured to communicate according to a standard wireless protocol and an audio controller, which are collectively configured to establish wireless communications with multiple audio sinks via a corresponding wireless link, to assign each audio sink a corresponding audio channel, to synchronize timing with each audio sink, and to transmit audio information for each audio channel to a corresponding audio sink via a corresponding wireless link. The audio source may inquire as to supported audio parameters, such as sample rate and audio codec, and selects a commonly supported configuration. The audio source may separate audio information into queues for each audio channel for each audio sink. The audio source transmits frames with timestamps and a common start time for synchronization, and the audio sinks use this information to synchronize timing and remain virtually synchronized with each other.

US Patent:

46150340, Sep 30, 1986

Filed:

Mar 30, 1984

Appl. No.:

6/595296

Inventors:

Marc K. von Gunten - San Jose CA
Benjamin H. Cook - San Jose CA
David C. Gerstenberger - Mountain View CA

Assignee:

Spectra-Physics, Inc. - San Jose CA

International Classification:

H01S 308

US Classification:

372 99

Abstract:

A wavelength selective mirror provides single wavelength operation of a gas laser. In a specific embodiment an output coupler optical interference coating allows oscillation of the 488. 0 nanometer line of the Argon ion laser blue/green spectrum while suppressing all other lines in that spectrum, particularly adjacent lines at 476. 5 nanometers and 496. 5 nanometers.

US Patent:

51174359, May 26, 1992

Filed:

Oct 25, 1990

Appl. No.:

7/603128

Inventors:

Benjamin H. Cook - Livermore CA
William P. Kolb - Redwood City CA

Assignee:

Coherent, Inc. - Palo Alto CA

International Classification:

H01S 322

US Classification:

372 59

Abstract:

A gas laser includes a housing containing a lasing gas. Means are provided for electrically exciting the gas including a cathode mounted at one end of the housing and an anode mounted at the other end. The temperature of the anode is monitored and a control signal is generated which is indicative of the temperature that is measured. An automatic gas supply apparatus is activated to vary the gas pressure in the housing in response to the control signal. Additionally, the temperature that is measured may be normalized to counteract the effects of the ambient temperature of the anode.

US Patent:

51249987, Jun 23, 1992

Filed:

May 21, 1990

Appl. No.:

7/525907

Inventors:

Marco Arrigoni - Sunnyvale CA
Gerald C. Barker - Palo Alto CA
William Kolb - Redwood City CA
Benjamin Cook - Livermore CA
Joseph Fraizer - Mountain View CA

Assignee:

Coherent, Inc. - Palo Alto CA

International Classification:

H01S 303

US Classification:

372 61

Abstract:

A sealed laser plasma tube for use in a gas laser system. A Brewster window seals one end of the tube (the cathode end, in a preferred embodiment), and an end mirror which seals the opposite tube end (the anode end, in a preferred embodiment). In a laser system embodying the invention, a second end mirror is positioned adjacent to, but spaced from, the Brewster window. Intra-cavity elements may conveniently be inserted and replaced in the region between the sealed Brewster window and the second end mirror. The sealed mirror which seals the tube end opposite the window is preferably coated with at least an outermost layer of Hafnium oxide, to protect it from hard UV radiation originating within the plasma tube. The inventors have recognized that the problem of sealed window degradation is substantially less severe at the cathode end of an ion laser plasma tube, and that the sealed window should be attached at the tube end at which the window degradation problem is less severe.

US Patent:

51014157, Mar 31, 1992

Filed:

Sep 14, 1990

Appl. No.:

7/582765

Inventors:

William P. Kolb - Redwood City CA
Benjamin H. Cook - Livermore CA

Assignee:

Coherent, Inc. - Palo Alto CA

International Classification:

H01S 308

US Classification:

372 99

Abstract:

An improved laser mirror (22) is disclosed with wavelength selective coatings on the inner and outer surfaces (32) and (34) thereof. The coating on the inner surface (32) is reflective of light in a first wavelength region (36) and transmissive of light in a second wavelength region (38). The outer surface (34) is reflective of light in the second wavelength region ( 38). In the preferred embodiment, one of the surfaces of the mirror is planar and the other is curved to facilitate alignment. The different curvatures of the inner and outer surfaces allows the diameter of the beam of the two wavelength regions to be independently controlled allowing optimization of the mode generated by the laser (20).

US Patent:

20220406649, Dec 22, 2022

Filed:

Feb 25, 2022

Appl. No.:

17/681029

Inventors:

- Dallas TX, US
Scott Robert SUMMERFELT - Garland TX, US
Benjamin COOK - Los Gatos CA, US

International Classification:

H01L 21/762
H01L 21/768
H01L 21/02
H01L 27/01

Abstract:

An integrated circuit (IC) includes a semiconductor substrate and an interconnect region. The semiconductor substrate has a first surface and a second surface opposite the first surface. The semiconductor substrate has a first region with a passive component. The semiconductor substrate has a second region outside the first region. The resistance of the second region is smaller than the resistance of the first region. The interconnection region is on the second surface of the semiconductor substrate.

US Patent:

20220406738, Dec 22, 2022

Filed:

Apr 29, 2022

Appl. No.:

17/732822

Inventors:

- Dallas TX, US
Adam FRUEHLING - Garland TX, US
Baher HAROUN - Allen TX, US
Scott Robert SUMMERFELT - Garland TX, US
Benjamin Stassen COOK - Los Gatos CA, US

International Classification:

H01L 23/66
H01Q 1/22
H01Q 9/04

Abstract:

An integrated circuit (IC) includes a semiconductor substrate having a first surface and a second surface opposite the first surface. A through wafer trench (TWT) extends from the first surface of the semiconductor substrate to the second surface of the semiconductor substrate. Dielectric material is in the TWT. An interconnect region has layers of dielectric on the first surface of the substrate. The interconnect region has a conductive transmit patch. An antenna is formed, at least in part, by the dielectric material in the TWT and the transmit patch in the interconnect region. The antenna is configured to transmit or receive electromagnetic radiation between the transmit patch and the second surface of the semiconductor substrate through the dielectric material within the trench.

US Patent:

20220406956, Dec 22, 2022

Filed:

Feb 25, 2022

Appl. No.:

17/680981

Inventors:

- Dallas TX, US
Baher HAROUN - Allen TX, US
Gerd SCHUPPENER - Allen TX, US
Scott Robert SUMMERFELT - Garland TX, US
Benjamin COOK - Los Gatos CA, US

International Classification:

H01L 31/173
H01L 49/02

Abstract:

An integrated circuit (IC) includes a substrate having a first surface and a second surface opposite the first surface. The substrate has a first region containing a first circuit and a second region containing a second circuit. The first circuit operates at a first supply voltage. The second circuit operates at a second supply voltage. The second supply voltage is higher than the first supply voltage. The IC includes a through wafer trench (TWT) extending from the first surface of the substrate to the second surface of the semiconductor substrate. The TWT separates the first region from the second region. A dielectric material is in the TWT. An interconnect region has layers of dielectric on the first surface of the substrate. The interconnect region is continuous over the first region, the second region, and the TWT. A non-galvanic communication channel is between the first and second circuits.