Benjamin Paul Haskell

US Patent:

20140353685, Dec 4, 2014

Filed:

Aug 13, 2014

Appl. No.:

14/459120

Inventors:

- Carlsbad CA, US
Vladimir Ivantsov - Hyattsville MD, US
Benjamin A. Haskell - Carlsbad CA, US
Hussein S. El-Ghoroury - Carlsbad CA, US
Alexander Syrkin - Montgomery Village MD, US

International Classification:

H01L 21/02
H01L 29/167
H01L 29/16
H01L 29/04
H01L 29/20

US Classification:

257 77, 438478, 257 76

Abstract:

A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes.