Benjamin H Kwan

US Patent:

52964060, Mar 22, 1994

Filed:

Jul 7, 1993

Appl. No.:

8/088928

Inventors:

John E. Readdie - San Jose CA
Benjamin H. Kwan - Pleasanton CA
Jeng Chang - San Jose CA

Assignee:

Linear Technology Corporation - Milpitas CA

International Classification:

H01L 2144

US Classification:

437175

Abstract:

A Schottky diode is presented which has reduced minority carrier injection and reduced diffusion of the metallization into the semiconductor. These improvements are obtained by interposing a layer comprising a mixture of silicon and chromium between the anode metallization layer and the semiconductor in a Schottky diode. The layer including chromium acts an effective barrier against the diffusion of the metallization layer into the semiconductor, and at the same time reduces the amount of minority carrier injection into the substrate. The layer including chromium requires no addition photolithograpic masks because it can be plasma etched using the metallization layer as a mask after that layer has been patterned.

US Patent:

52548694, Oct 19, 1993

Filed:

Jun 28, 1991

Appl. No.:

7/722941

Inventors:

John E. Readdie - San Jose CA
Benjamin H. Kwan - Pleasanton CA
Jeng Chang - San Jose CA

Assignee:

Linear Technology Corporation - Milpitas CA

International Classification:

H01L 2978

US Classification:

257485

Abstract:

A Schottky diode is presented which has reduced minority carrier injection and reduced diffusion of the metallization into the semiconductor. These improvements are obtained by interposing a layer comprising a mixture of silicon and chromium between the anode metallization layer and the semiconductor in a Schottky diode. The layer including chromium acts an effective barrier against the diffusion of the metallization layer into the semiconductor, and at the same time reduces the amount of minority carrier injection into the substrate. The layer including chromium requires no addition photolithograpic masks because it can be plasma etched using the metallization layer as a mask after that layer has been patterned.