Bert L Allen

US Patent:

46185410, Oct 21, 1986

Filed:

Dec 21, 1984

Appl. No.:

6/684516

Inventors:

Abdul R. Forouhi - San Jose CA
Bert L. Allen - Los Altos CA

Assignee:

Advanced Micro Devices, Inc. - Sunnyvale CA

International Classification:

B44C 508

US Classification:

428688

Abstract:

The ratio of silane-to-ammonia in a reaction designed to deposit a silicon nitride thin film affects the refractive index as well as the absorption coefficient of the film. By controlling the influx of these gases such that an essentially small ratio of silane-to-ammonia exists in a reaction chamber, a silicon nitride film 9 is deposited which is transparent to ultraviolet radiation 4. The exact ratio needed is dependent upon the geometry and operating parameters of the reaction chamber system employed in the deposition process. Ultraviolet light transparent silicon nitride film provides a superior passivation layer 9 for erasable programmable read only memory integrated devices 2.

US Patent:

50100246, Apr 23, 1991

Filed:

May 15, 1989

Appl. No.:

7/353169

Inventors:

Bert L. Allen - Los Altos CA
Peter S. Gwozdz - Cupertino CA
Thomas R. Bowers - Austin TX

Assignee:

Advanced Micro Devices, Inc. - Sunnyvale CA

International Classification:

H01L 21425
H01L 21441

US Classification:

437 24

Abstract:

A method is described for producing an integrated circuit structure, including EPROMS, having excellent resistance to penetration by moisture and ion contaminants and a substantial absence of voids in an underlying metal layer in the structure, and, in the case of EPROMS, maintaining sufficient UV light transmissity to permit erasure which comprises stress relieving the underlying metal layer from stresses induced by the compressive stress of a silicon nitride encapsulating layer to inhibit the formation of voids therein by implanting the metal layer with ions to change the grain structure adjacent the surface of the metal layer; forming an insulating intermediate layer between said the layer and the silicon nitride layer selected from the class consisting of an oxide of silicon and silicon oxynitride having a compressive/tensile stress which sufficiently compensates for the compressive stress of the silicon nitride layer; and controlling the compressive stress in the silicon nitride layer to provide resistance to moisture and ion penetration superior to silicon dioxide or silicon oxynitride layers of similar thickness while inhibiting formation of voids in the metal layer.

US Patent:

43476546, Sep 7, 1982

Filed:

Jun 18, 1980

Appl. No.:

6/160513

Inventors:

Bert L. Allen - Cupertino CA
Robert L. Wourms - Santa Clara CA
Daniel C. Hu - Saratoga CA

Assignee:

National Semiconductor Corporation - Santa Clara CA

International Classification:

H01L 21306
H01L 21265

US Classification:

29576B

Abstract:

A method of fabricating a high-frequency bipolar transistor structure wherein the emitter, higher impurity concentration base, and lower impurity concentration base regions are defined in a single masking operation. Permeation etching is used to etch regions of an oxide layer under a layer of resist which defines regions of the higher impurity concentration thereby simultaneously defining the emitter and lower impurity concentration base regions. The higher impurity concentration base regions are formed by ion implantation of impurities through the unetched oxide regions. The resist is then removed and the lower impurity concentration base and emitters are formed through the resulting opening in the oxide. This results in the self-aligning of the emitter regions with respect to the base regions.

US Patent:

46654267, May 12, 1987

Filed:

Feb 1, 1985

Appl. No.:

6/697364

Inventors:

Bert L. Allen - Los Altos CA
A. Rahim Forouhi - San Jose CA

Assignee:

Advanced Micro Devices, Inc. - Sunnyvale CA

International Classification:

H01L 2978
H01L 2906

US Classification:

357 54

Abstract:

An erasable programmable read only memory (EPROM) integrated circuit device 2 having a topside passivation layer 9 of silicon nitride which is transparent to ultraviolet radiation is disclosed. The refractive index of the silicon nitride film is in the range of 1. 93. +-. 03.