Brian E Greene

US Patent:

7989298, Aug 2, 2011

Filed:

Jan 25, 2010

Appl. No.:

12/692859

Inventors:

Kevin K. Chan - Staten Island NY, US
Brian J. Greene - Wappingers Falls NY, US
Judson R. Holt - Wappingers Falls NY, US
Jeffrey B. Johnson - Essex Junction NY, US
Thomas S. Kanarsky - Hopewell Junction NY, US
Jophy S. Koshy - Wappingers Falls NY, US
Kevin McStay - Hopewell Junction NY, US
Johan W. Weijtmans - Hopewell Junction NY, US
Frank B. Yang - Mahwah NJ, US

Assignee:

International Business Machines Corporation - Armonk NY
Advanced Micro Devices, Inc - Sunnyvale CA

International Classification:

H01L 21/336
H01L 21/76

US Classification:

438300, 438222, 438285, 438429, 257E2143, 257E21409

Abstract:

A semiconductor device and a method of making the device are provided. The method can include forming a gate conductor overlying a major surface of a monocrystalline semiconductor region and forming first spacers on exposed walls of the gate conductor. Using the gate conductor and the first spacers as a mask, at least extension regions are implanted in the semiconductor region and dummy spacers are formed extending outward from the first spacers. Using the dummy spacers as a mask, the semiconductor region is etched to form recesses having at least substantially straight walls extending downward from the major surface to a bottom surface, such that a substantial angle is defined between the bottom surface and the walls. Subsequently, the process is continued by epitaxially growing regions of stressed monocrystalline semiconductor material within the recesses. Then the dummy spacers are removed and the transistor can be completed by forming source/drain regions of the transistor that are at least partially disposed in the stressed semiconductor material regions.

US Patent:

20130099313, Apr 25, 2013

Filed:

Oct 19, 2011

Appl. No.:

13/276395

Inventors:

Eduard A. CARTIER - New York NY, US
Brian J. GREENE - Wappingers Falls NY, US
Dechao GUO - Fishkill NY, US
Gan WANG - Fishkill NY, US
Yanfeng WANG - Fishkill NY, US
Keith Kwong Hon WONG - Wappingers Falls NY, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01L 29/78
H01L 21/28

US Classification:

257347, 438595, 257E29255, 257E21158

Abstract:

FinFET structures and methods of manufacturing the FinFET structures are disclosed. The method includes performing an oxygen anneal process on a gate stack of a FinFET structure to induce Vt shift. The oxygen anneal process is performed after sidewall pull down and post silicide.

US Patent:

20130168804, Jul 4, 2013

Filed:

Feb 27, 2013

Appl. No.:

13/778419

Inventors:

International Business Machines Corporation - Armonk NY, US
Brian J. Greene - Fishkill NY, US
Dureseti Chidambarrao - Weston CT, US
Gregory G. Freeman - Wappinger Falls NY, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01L 29/06
H01L 21/762

US Classification:

257510, 438435

Abstract:

A stack pad layers including a first pad oxide layer, a pad nitride layer, and a second pad oxide layer are formed on a semiconductor-on-insulator (SOI) substrate. A deep trench extending below a top surface or a bottom surface of a buried insulator layer of the SOI substrate and enclosing at least one top semiconductor region is formed by lithographic methods and etching. A stress-generating insulator material is deposited in the deep trench and recessed below a top surface of the SOI substrate to form a stress-generating buried insulator plug in the deep trench. A silicon oxide material is deposited in the deep trench, planarized, and recessed. The stack of pad layer is removed to expose substantially coplanar top surfaces of the top semiconductor layer and of silicon oxide plugs. The stress-generating buried insulator plug encloses, and generates a stress to, the at least one top semiconductor region.

US Patent:

20220296941, Sep 22, 2022

Filed:

Dec 29, 2021

Appl. No.:

17/564619

Inventors:

Brian Greene - Wood Ridge NJ, US

International Classification:

A62B 23/02

Abstract:

The present invention relates to the field of firefighter facial masks. More specifically, the present invention relates to a firefighter respirator mask device that is preferably comprised of a body, a facial covering over an opening of an SCBA mask, a fastening mechanism and a filter. The body of the device preferably resembles an ovular shape, or any shape that sufficiently covers the hole left over the mouth of an SCBA mask when not attached to an oxygenated hose, normally present under hazardous conditions. The device is comprised of color-changing technology that allows the facial mask to turn colors in response to pathogenic exposure, indicating to the user that it is no longer sterile. In this manner, the device can be applied to any firefighter or industrial worker requiring the use of an SCBA without risk of possible pathogenic exposure when not attached to an oxygenated hose.

Address:

1164 Ossipee Rd, West Hempstead, NY 11552

Phone:

5162330891

VIN:

1YVHZ8CB5A5M35776

Make:

MAZDA

Model:

MAZDA6

Year:

2010

Address:

5647 Saint Charles Dr, Woodbridge, VA 22193

Phone:

7035808330

VIN:

JTMZD33V486080609

Make:

TOYOTA

Model:

RAV4

Year:

2008