Brian Kevin Reid

US Patent:

8530247, Sep 10, 2013

Filed:

Nov 25, 2008

Appl. No.:

12/323025

Inventors:

Brian Douglas Reid - Plano TX, US
James David Bernstein - Plano TX, US
Hongyu Yue - Plano TX, US
Howie Hui Yang - Carrollton TX, US
Mark Boehm - Wylie TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21/027
H01L 21/66

US Classification:

438 5, 257E21027, 257E2153

Abstract:

A method for semiconductor processing is provided, wherein a semiconductor wafer having undergone polishing is provided. The semiconductor wafer has an active region positioned between one or more moat regions, wherein the one or more moat regions have an oxide disposed therein. A top surface of the active region is recessed from a top surface of the moat region, therein defining a step having a step height associated therewith. A step height is measured, and a photoresist is formed over the semiconductor wafer. A modeled step height is further determined, wherein the modeled step height is based on the measured step height and a desired critical dimension of the photoresist. A dosage of energy is determined for patterning the photoresist, wherein the determination of the dosage of energy is based, at least in part, on the modeled step height. The photoresist is then patterned using the determined dosage of energy.

US Patent:

20080146001, Jun 19, 2008

Filed:

Dec 15, 2006

Appl. No.:

11/639934

Inventors:

Cody Michael Berger - Mckinney TX, US
Brian Douglas Reid - Plano TX, US

International Classification:

H01L 21/762

US Classification:

438424, 257E21546

Abstract:

A method of forming a shallow trench isolation structure is provided, and includes forming a mask structure over active regions of a substrate, thereby defining a trench region therebetween. A descum is then performed to remove any particulate matter that may be in the trench region over the substrate. A trench is then formed in the substrate corresponding to the trench region of the mask structure, followed by a filling of the trench with an electrically insulating material.