A capacitive electrical energy storage structure is fabricated as a thin-film device comprising electrodes on opposite sides of a dielectric layer. In one approach, a high surface area metallic sponge can be incorporated into the structure. The energy storage structure can comprise either single or multiple layers of capacitors connected in series, parallel, or a combination of such arrangements. The multi-layer capacitor structure can be either applied directly to supporting structures of portable or transportable devices or can be fabricated as a film which is applied as a laminate to such structures. Further, a conformal energy storage structure can be produced which is shaped to fit in voids within devices, which voids would otherwise be little used or unused. A high capacity storage thin-film structure can be fabricated on one surface of a substrate with an immediately adjacent, overlapping power consuming electronic circuit such that power is available at very short distance to support operational circuits which cannot tolerate long conductive power supply lines. Portable consumer devices can be fabricated with the interiors of the housings conformally coated with the capacitive structure for providing energy storage as a replacement to rechargeable or disposable batteries.
An apparatus for absorbing thermal energy has an electronic component, a support structure for the electronic component having a first set of surfaces defining an interior volume containing a plurality of secondary surfaces, and a thermal energy absorbing material integrated within the interior volume, in contact with at least a portion of the secondary surfaces to form a composite structure. The thermal energy absorbing material is in operative thermal communication with the electronic component such that at least a portion of the thermal energy generated by the electronic component flows, via the support structure, into the thermal energy absorbing material. A method for controlling a temperature of an electronic component mounts an electronic component on a support structure in thermal communication with a thermal energy absorbing material integrated into an interior volume of the support structure. At least a portion of a thermal load from the electronic component is transported to the thermal energy absorbing material, and the portion of the thermal load is absorbed with the thermal energy absorbing material while undergoing an endothermic reaction during a phase change of the material, such that a temperature of the electronic component is maintained below a mounting surface temperature.
J. Michael Elias - Orlando FL, US Bruce M. Cepas - Orlando FL, US James A. Korn - Orlando FL, US
Assignee:
Lockheed Martin Corporation - Bethesda MD
International Classification:
H05K 7/20
US Classification:
361700, 361679, 361690, 361708, 16510433, 174 151
Abstract:
An integrated thermal apparatus for improved electronic device performance has an energy storage device coupled with a thermoelectric management device for managing thermal energy generated by the electronic device. The thermoelectric management device can include a semiconductor thermoelectric device and phase change material, which can be integrated into a foam aluminum structure. The energy storage device can be a nanometallic device. The electrical load electrical efficiency is improved by co-locating it with thermoelectric management device directly on a composite substrate foundation to provide enhanced waste heat conversion to electrical energy. The apparatus manages the thermal and power issues at the substrate level in close proximity to the electrical load and incorporates the needed thermal mass into the support structure by way of a phase change material.
Bruce M. Cepas - Little Egg Harbor NJ, US Noel Delgado - Mount Laurel NJ, US Yan Zheng - Philadelphia PA, US
Assignee:
Lockheed Martin Corporation - Bethesda MD
International Classification:
G05F 1/00 H03G 3/00 H03F 3/04 H02M 3/18
US Classification:
330297, 323265, 323271, 330127, 363 60
Abstract:
A switched linear regulator includes a control device with a controlled current path and a control electrode. The current path is connected in series with a source of voltage and a load. An error signal generator compares the load voltage with a reference value to generate a degenerative error signal. The error signal is coupled to the control electrode with a voltage offset. An OFF control signal source includes a transistor which is connected to the control electrode to swamp or overpower the error signal, and render the controlled current path nonconductive. Thus, the same active control element both linearly regulates and provides an ON-OFF function. A speed-up transistor responds to the OFF signal to short the control electrode to a reference voltage to quickly discharge capacitance at the control electrode.