Bruce M Green

Address:

5345 Randolph Rd APT 1, Rockville, MD 20852

Phone:

3014685704

VIN:

4T3ZA3BBXAU036618

Make:

TOYOTA

Model:

VENZA

Year:

2010

US Patent:

7229903, Jun 12, 2007

Filed:

Aug 25, 2004

Appl. No.:

10/925855

Inventors:

Hsin-Hua P. Li - Scottsdale AZ, US
Bruce M. Green - Gilbert AZ, US
Olin L. Hartin - Phoenix AZ, US
Ellen Y. Lan - Chandler AZ, US
Charles E. Weitzel - Mesa AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01L 21/28
H01L 21/44

US Classification:

438571, 438572, 438573, 438574, 438576

Abstract:

A semiconductor structure includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, a third semiconductor layer over the second semiconductor layer, and a fourth semiconductor layer over the third semiconductor layer. A first conductive portion is coupled to the first semiconductor layer, and a second conductive portion is formed over the first semiconductor layer.

US Patent:

8410580, Apr 2, 2013

Filed:

Jan 12, 2011

Appl. No.:

13/005240

Inventors:

Darrell G. Hill - Tempe AZ, US
Bruce M. Green - Gilbert AZ, US

Assignee:

Freescale Semiconductor Inc. - Austin TX

International Classification:

H01L 29/40

US Classification:

257621, 257E23067, 257E23174

Abstract:

An electronic device () having a conductive substrate via () extending between a conductor () on a rear face () and a conductor () over the front surface () of the substrate () includes a multi-layered etch-stop (-) beneath the front surface conductor (). The etch-stop (-) permits use of a single etchant to penetrate both the substrate () and any overlying semiconductor () and/or dielectric () without attacking the overlying front surface conductor (). This is especially important when the semiconductor () and dielectric () are so thin as to preclude changing etchants when these regions are reached during etching. The etch-stop () is preferably a stack () of N≧2 pairs (-) of sub-layers (--) in either order, where a first sub-layer (-) comprises stress relieving and/or adhesion promoting material (e. g. , Ti), and the second sub-layer (-) comprises etch resistant material (e. g. , Ni). In a further embodiment, where the device () includes field effect transistors () having feedback sensitive control gates (), the etch-stop material () is advantageously used to form gate shields ().

US Patent:

8568735, Oct 29, 2013

Filed:

Jun 22, 2010

Appl. No.:

13/379216

Inventors:

Annaliesa Anderson - Upper Saddle River NJ, US
Viliam Pavliak - Montebello NY, US
Kathrin Ute Jansen - Allendale NJ, US
Ingrid Lea Scully - Cornwall NY, US
Steven Morris Baker - Springwater NY, US
Jasdeep Singh Nanra - Suffern NY, US
Ellen Murphy - City Island NY, US
Bruce Arthur Green - New City NY, US
Mark Edward Ruppen - Garnerville NY, US
Yekaterina Timofeyeva - Mahwah NJ, US

Assignee:

Wyeth LLC - Madison NJ

International Classification:

A61K 39/085
A61K 39/40

US Classification:

42419711, 4241651, 4242431

Abstract:

The present invention relates to immunogenic compositions, comprising polypeptides and polysaccharides from. The present invention also relates to immunogenic compositions, comprising capsule polysaccharides conjugated to a carrier protein. In addition, the invention relates to methods of inducing an immune response in subjects against using immunogenic compositions of the polypeptides and capsule polysaccharides.

US Patent:

8609538, Dec 17, 2013

Filed:

Feb 11, 2013

Appl. No.:

13/764398

Inventors:

Darrell G. Hill - Tempe AZ, US
Bruce M. Green - Gilbert AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01L 21/44

US Classification:

438667, 257E21597

Abstract:

An electronic device having a conductive substrate via extending between a conductor on a rear face and a conductor over a front face of the substrate includes a multi-layered etch-stop beneath the front surface conductor. The etch-stop permits use of a single etchant to penetrate both the substrate and any overlying semiconductor and/or dielectric without attacking the overlying front surface conductor. This is especially important when the semiconductor and dielectric are so thin as to preclude changing etchants when these regions are reached during etching. The etch-stop is preferably a stack of N≧2 pairs of sub-layers, where a first sub-layer comprises stress relieving and/or adhesion promoting material (e. g. , Ti), and the second sub-layer comprises etch resistant material (e. g. , Ni). In a further embodiment, where the device includes field effect transistors having feedback sensitive control gates, the etch-stop material is advantageously used to form gate shields.

US Patent:

20120276137, Nov 1, 2012

Filed:

Jun 22, 2010

Appl. No.:

13/379291

Inventors:

Stephen John Freese - Cornwall-on-Hudson NY, US
Annaliesa Anderson - Upper Saddle River NJ, US
Viliam Pavliak - Montebello NY, US
Kathrin Ute Jansen - Allendale NJ, US
Ingrid Lea Scully - Cornwall NY, US
Tracy Dee Scott - Foristell MO, US
Jasdeep Singh Nanra - Suffern NY, US
A. Krishna Prasad - Chapel Hill NC, US
Bruce Arthur Green - New City NY, US

Assignee:

Wyeth LLC - Madison NJ

International Classification:

A61K 39/085
A61P 37/04
A61P 31/04
C07K 14/31

US Classification:

42419711, 530395

Abstract:

The present invention relates to immunogenic conjugates comprising serotype 5 and 8 capsular polysaccharides conjugated to carrier proteins and methods for their preparation and use. Methods for making the immunogenic conjugates of the invention involve covalent conjugation of the capsular polysaccharides with the carrier proteins using conjugation chemistry involving either 1,1-carboyl-di-1,2,4-triazole (CDT) or 3-(2-pyridyldithio)-propionyl hydrazide (PDPH).

US Patent:

42912822, Sep 22, 1981

Filed:

Sep 7, 1979

Appl. No.:

6/073441

Inventors:

Robert R. Alfano - New York NY
Bruce H. Green - Forest Hills NY

Assignee:

The Research Foundation of the City University of New York - New York NY

International Classification:

H01S 313

US Classification:

331 945S

Abstract:

A pulse producing mode-locked laser system with only passive lens and filtering elements and low cost Nd:glass laser material, or an equivalent, is stabilized and made to produce reliably output laser pulses of known characteristics and intensity without critical alignment and operating conditions. This is performed by eliminating response to spurious satellite laser pulses incited when triggering the coherent radiation in the laser materials. Several system components aid in the attainment of the better signal to noise ratio effective in making the laser system produce uniform output pulses from shot to shot, including provision of at least one mirror with a radius of curvature R meeting the criterion 3L>R>L where L is the path length through the laser material between two reflecting mirrors, and a dye mode-locking cell increased in path length by two orders of magnitude to the order of 1 cm. Also the mirrors have a wedge-shaped reflection surface at an angle of. gtoreq. 20' up to 2. degree.

US Patent:

20100221288, Sep 2, 2010

Filed:

May 12, 2010

Appl. No.:

12/778530

Inventors:

ROBERT JOHN ZAGURSKY - NEW YORK NY, US
AMY WADHAMS MASI - CALEDONIA NY, US
BRUCE ARTHUR GREEN - NEW CITY NY, US
DEB NARAYAN CHAKRAVARTI - CLAREMONT CA, US
DAVID PARRISH RUSSELL - CANANDAIGUA NY, US
JOSEPH LAWRENCE WOOTERS - BRIGHTON MA, US

Assignee:

WYETH HOLDINGS CORPORATION - MADISON NJ

International Classification:

A61K 39/02
C12P 21/06
C12N 9/00
C12N 1/21
C12N 15/63
C40B 40/08
C07H 21/04
C07H 21/02

US Classification:

4242341, 435 691, 435183, 4352523, 4353201, 506 17, 536 237, 536 243, 536 2433

Abstract:

The present invention relates to newly identified open reading frames comprised within the genomic nucleotide sequence of , wherein the open reading frames encode polypeptides that are surface localized on . Thus, the invention relates to open reading frames that encode polypeptide antigens, polypeptides, preferably antigenic polypeptides, encoded by the open reading frames, vectors comprising open reading frame sequences and cells or animals transformed with these vectors. The invention relates also to methods of detecting these nucleic acids or polypeptides and kits for diagnosing infection. The invention finally relates to pharmaceutical compositions, in particular immunogenic compositions, for the prevention and/or treatment of bacterial infection, in particular infections with . In particular embodiments, the immunogenic compositions are used for the treatment or prevention of systemic diseases which are induced or exacerbated by . In other embodiments, the immunogenic compositions are used for the treatment or prevention of non-systemic diseases, particularly of the otitis media, which are induced or exacerbated by

US Patent:

20220208975, Jun 30, 2022

Filed:

Dec 31, 2020

Appl. No.:

17/139636

Inventors:

- Eindhoven, NL
Bernhard Grote - Phoenix AZ, US
Humayun Kabir - Gilbert AZ, US
Bruce McRae Green - Gilbert AZ, US

International Classification:

H01L 29/40
H01L 29/20
H01L 29/205
H01L 29/06
H01L 29/66
H01L 29/78

Abstract:

An embodiment of a semiconductor device includes a semiconductor substrate, a first dielectric layer disposed over the upper surface of the semiconductor substrate, and a first current-carrying electrode and a second current-carrying electrode formed over the semiconductor substrate within openings formed in the first dielectric layer. A control electrode is formed over the semiconductor substrate and disposed between the first current-carrying electrode and a second current-carrying electrode and over the first dielectric layer. A first conductive element is formed over the first dielectric layer, adjacent the control electrode and between the control electrode and the second current-carrying electrode. A second dielectric layer is disposed over the control electrode and over the first conductive element. A second conductive element is disposed over the second dielectric layer and over the first conductive element.