Bryant A. Campbell - Los Gatos CA Dale R. DuBois - Los Gatos CA Ralph F. Manriquez - Saratoga CA Nicholas E. Miller - Cupertino CA
Assignee:
Anicon, Inc. - San Jose CA
International Classification:
C23C 1308
US Classification:
118719
Abstract:
An improved chemical vapor deposition device having heating means substantially surrounding an inner deposition chamber for providing isothermal or precisely controlled gradient temperature conditions therein. The internal components of the chamber are quartz or similar radiant energy transparent material. Also included are special cooling means to protect thermally sensitive seals, structural configurations strengthening areas of glass components subjected to severe stress during operation, and specific designs permitting easy removal and replacement of all glass components exposed to deposition gas.
Bryant A. Campbell - Los Gatos CA Nicholas E. Miller - Cupertino CA
Assignee:
Anicon, Inc. - San Jose CA
International Classification:
C23C 1308
US Classification:
118719
Abstract:
A chemical vapor deposition device having uniformly distributed heating means substantially surrounding an inner deposition reaction chamber for providing isothermal or precisely controlled gradient temperature conditions therein, the reaction chamber being surrounded by the walls of an outer vacuum chamber spaced therefrom.
Substrate Loading Means For A Chemical Vapor Deposition Apparatus
Bryant A. Campbell - Los Gatos CA Dale R. DuBois - Los Gatos CA Ralph F. Manriquez - Saratoga CA Nicholas E. Miller - Cupertino CA
Assignee:
Anicon, Inc. - San Jose CA
International Classification:
C23C 1308
US Classification:
118719
Abstract:
A controlled temperature deposition device comprising an inner reaction chamber having gas distribution means for introducing gas into inner chamber and removing gas therefrom and a vacuum chamber means surrounding the inner deposition chamber and spaced from the walls thereof for maintaining a medium vacuum therein. Associated with the deposition device is a substrate loading and unloading fork which transfers substrates such as wafer boats from outside the device to a position in the inner deposition chamber and removes them from the inner deposition chamber following deposition.
Plasma Sterilizing Process With Pulsed Antimicrobial Agent Treatment
Kern A. Moulton - Livermore CA Bryant A. Campbell - Los Gatos CA Ross A. Caputo - Long Grove IL
Assignee:
Abtox, Inc. - Pleasanton CA
International Classification:
A61L 214 A61L 220
US Classification:
422 22
Abstract:
A process for plasma sterilization comprising exposing an article in a sterilizing chamber to at least one cycle comprising a pulsed treatment with gaseous antimicrobial agent and a plasma treatment. The pulsed treatment comprises at least two pulse-vacuum cycles, each pulse-vacuum cycle comprising the steps of exposing the article to the gaseous antimicrobial agent at a pressure of from 4 to 18 torr and reducing the pressure in the sterilizing chamber to from 0. 1 to 4 torr. The plasma treatment comprising exposing the article to a plasma generated from gases selected from the group consisting essentially of argon, helium, nitrogen, oxygen, hydrogen and mixtures thereof, the exposure to the plasma being carried out at a pressure of from 0. 1 to 10 torr and a temperature of less than 80. degree. C. The antimicrobial agent is selected from the group consisting of hydrogen peroxide, a peracid antimicrobial agent, and mixtures thereof, the peracid antimicrobial agent being selected from the group consisting of saturated and unsaturated peralkanoic acids having from 1 to 8 carbon atoms and halogenated derivatives thereof.
Bryant A. Campbell - Los Gatos CA Nicholas E. Miller - Cupertino CA
Assignee:
Anicon, Inc. - San Jose CA
International Classification:
C23C 1100
US Classification:
4272481
Abstract:
A chemical vapor deposition device having uniformly distributed heating means substantially surrounding an inner deposition reaction chamber for providing isothermal or precisely controlled gradient temperature conditions therein, the reaction chamber being surrounded by the walls of an outer vacuum chamber spaced therefrom.
Plasma Sterilizing With Downstream Oxygen Addition
Phillip A. Martens - Fremont CA Bryant A. Campbell - Los Gatos CA
Assignee:
ABTOX, Inc. - Mundelein IL
International Classification:
A61L 200
US Classification:
422 23
Abstract:
A method for plasma sterilization includes forming a gas plasma from a substantially oxygen-free mixture containing argon or helium and from 1% to 5% (v/v) hydrogen in a plasma generating chamber, and exposing an article to be sterilized in a sterilizing chamber to a non-explosive mixture of the plasma gas and from 1% up to 20% (v/v) oxygen gas. Preferably, the pressure in the sterilizing chamber is from 0. 1 to 10 torr and the chamber temperature is less than 6. degree. C. , the mixture from which the plasma is generated contains from 4% to 5% (v/v) hydrogen, and the article in the sterilizing chamber is exposed to a mixture of plasma gas and from 1% to 10% (v/v) oxygen.
An apparatus for plasma sterilization including a sterilization chamber and at least one microwave plasma generator for producing gas plasma products communicating therewith. The mircowave plasma generator includes a cylindrical metal waveguide and an axially concentric magnetron antenna extending into the waveguide. The plasma generator includes an inner plasma container made of a electromagnetic transparent material.
Kern A. Moulton - Livermore CA Bryant A. Campbell - Los Gatos CA Ross A. Caputo - Long Grove IL
Assignee:
Abtox, Inc. - Pleasanton CA
International Classification:
A61L 200
US Classification:
422 23
Abstract:
A method for plasma sterilization within a controlled temperature range includes exposing an article in a sterilizing chamber to a gas plasma flowing from a plasma generating chamber until the temperature in the sterilizing chamber rises to a preselected maximum temperature. The flow of the plasma gas to the sterilizing chamber is terminated until the temperature in the sterilizing chamber falls to a temperature below the preselected maximum temperature. These steps are repeated until sterilization of the article is effected. The temperature below the preselected maximum temperature when gas plasma flow is again initiated is preferably not more than 3. degree. C. below the preselected maximum temperature. The gas plasma can be generated from a mixture of gases consisting essentially of argon, helium, nitrogen or mixtures thereof; from 1 to 21 (v/v) % oxygen; and from 1 to 20 (v/v) % hydrogen; or a mixture containing from 1 to 10 (v/v) % oxygen and from 3 to 7 (v/v) % hydrogen; or a mixture containing 1 to 10 (v/v) % hydrogen and from 90 to 99 (v/v) % of argon, helium, nitrogen or mixtures thereof. Preferably the pressure in the sterilizing chamber rises to from 0.
Amc Theater 24 Phoenix, AZ May 2014 to Jul 2014 Film Crew MemberRoadLink Workforce Tolleson, AZ Apr 2014 to Present Material HandlerUniversal Protection Services Phoenix, AZ Nov 2012 to Aug 2013 Professional Security OfficerAdecco Group. Phoenix, AZ Jun 2012 to Aug 2012 Usher/tech guard
Education:
Tulsa Welding School Tulsa, OK 2014 to 2015 Professional Welder Cert. in Welding scienceDouglas Adult High School Minden, NV 2001 to 2002 High School Dipolma in General Education
Skills:
Utilized E6061, [] 3/32), E308, E309L, ER4043, ER6061. I've welded structural steel in the following positions; 1F, 2F, 3F, 4F, 1G, 2G, 3G, 4G. All plate and structural steel was welded to ASME Sec IX, DI.I. Aluminum and Stainless Steel in Accordance with Military Standard 1595-A.
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