Caroline A Ross

US Patent:

6906369, Jun 14, 2005

Filed:

Feb 10, 2004

Appl. No.:

10/775600

Inventors:

Caroline A. Ross - Boston MA, US
Fernando J. Castano - Cambridge MA, US

Assignee:

Massachusetts Institute of Technology - Cambridge MA

International Classification:

H01L029/76

US Classification:

257295, 428692, 428694, 428900, 365129, 365158, 365173

Abstract:

A magnetic-ring structure includes at least two states, and at least one twisted state that includes a 360 domain wall that can exist over a wide range of applied fields.

US Patent:

7006289, Feb 28, 2006

Filed:

Sep 4, 2003

Appl. No.:

10/655378

Inventors:

Caroline A. Ross - Boston MA, US
Tamar Tepper - Haifa, IL
Ytshak Avrahami - Arlington MA, US

Assignee:

Massachuesetts Institute of Technology - Cambridge MA

International Classification:

G02B 27/28
G02B 5/30

US Classification:

359500, 359494, 385 11

Abstract:

An optical isolator is provided. The optical isolator includes a substrate and a thin film is formed comprising of iron oxide or magnetic persovskite-type material having a high Faraday rotation.

US Patent:

7303860, Dec 4, 2007

Filed:

Dec 6, 2002

Appl. No.:

10/313309

Inventors:

Bernhard Vogeli - Boston MA, US
Timothy A. Savas - Cambridge MA, US
Henry I. Smith - Sudbury MA, US
Caroline A. Ross - Boston MA, US

Assignee:

Massachusetts Institute of Technology - Cambridge MA

International Classification:

G03F 7/26

US Classification:

430316, 430313

Abstract:

A micro-fabricated structure and method of forming a micro-fabricated structure are disclosed. The method includes the steps of forming a first pattern in a first photo-resist, transferring the first pattern in the first photo-resist to a mask layer, forming a second pattern in a second photo-resist, and transferring the second pattern in the second photo-resist to the mask layer. In various embodiments, the method may further include the steps of forming a first pattern in a first photo-resist, forming a second pattern in a second photo-resist, and transferring the first and second patterns to a target layer.

US Patent:

7790045, Sep 7, 2010

Filed:

Sep 13, 2007

Appl. No.:

11/854872

Inventors:

Caroline A. Ross - Arlington MA, US

Assignee:

Massachusetts Institute of Technology - Cambridge MA

International Classification:

B44C 1/22
B05D 3/00

US Classification:

216 2, 216 39, 216 41, 216 55, 216 83, 216 67, 216 99, 427256, 427309, 4273722, 977888, 977895, 977900

Abstract:

The present invention relates to the self-assembly of a spherical-morphology block copolymer into V-shaped grooves of a substrate. Although spherical morphology block copolymers typically form a body-centered cubic system (bcc) sphere array in bulk, the V-shaped grooves promote the formation of a face-centered cubic system (fcc) sphere array that is well ordered. In one embodiment, the (111) planes of the fcc sphere array are parallel to the angled side walls of the V-shaped groove. The (100) plane of the fcc sphere array is parallel to the top surface of the substrate, and may show a square symmetry among adjacent spheres. This square symmetry is unlike the hexagonal symmetry seen in monolayers of spherical domains and is a useful geometry for lithography applications, especially those used in semiconductor applications.

US Patent:

8147914, Apr 3, 2012

Filed:

Jun 11, 2008

Appl. No.:

12/137016

Inventors:

Yeon Sik Jung - Cambridge MA, US
Caroline A. Ross - Arlington MA, US

Assignee:

Massachusetts Institute of Technology - Cambridge MA

International Classification:

B05D 3/02

US Classification:

427384, 427256, 4273722, 427553, 427534, 427535, 427536, 216 2, 216 39, 216 58, 216 67, 977888, 977895, 977900

Abstract:

Disclosed is a structure made of a trench patterned substrate having a pre-determined trench period and a pre-determined mesa to trench width ratio, and a block copolymer on top of the trench patterned substrate. The block copolymer has at least an organic block and a silicon-containing block, wherein the block copolymer can have either perpendicular or parallel cylinders. The structure is annealed under a pre-determined vapor pressure for a predetermined annealing time period, wherein the pre-determined trench period, the pre-determined mesa to trench width ratio, the predetermined vapor pressure and the predetermined annealing time period are chosen such that cylinders formed in the block copolymer are either perpendicular or parallel with respect to the trench-patterned substrate. A method is also described to form the above-mentioned structure.

US Patent:

8163374, Apr 24, 2012

Filed:

Jun 7, 2010

Appl. No.:

12/795318

Inventors:

Caroline A. Ross - Arlington MA, US

Assignee:

Massachusetts Institute of Technology - Cambridge MA

International Classification:

B32B 3/28
B32B 3/30

US Classification:

428167, 977888, 977895, 977900

Abstract:

The present invention relates to the self-assembly of a spherical-morphology block copolymer into V-shaped grooves of a substrate. Although spherical morphology block copolymers typically form a body-centered cubic system (bcc) sphere array in bulk, the V-shaped grooves promote the formation of a face-centered cubic system (fcc) sphere array that is well ordered. In one embodiment, the (111) planes of the fcc sphere array are parallel to the angled side walls of the V-shaped groove. The (100) plane of the fcc sphere array is parallel to the top surface of the substrate, and may show a square symmetry among adjacent spheres. This square symmetry is unlike the hexagonal symmetry seen in monolayers of spherical domains and is a useful geometry for lithography applications, especially those used in semiconductor applications.

US Patent:

8309278, Nov 13, 2012

Filed:

Sep 17, 2010

Appl. No.:

12/885051

Inventors:

Joel K. W. Yang - Research Link, SG
Karl K. Berggren - Delft, NL
Yeon Sik Jung - Cambridge MA, US
Caroline A. Ross - Arlington MA, US

Assignee:

Massachusetts Institute of Technology - Cambridge MA

International Classification:

G03F 1/50
H01L 21/31
H01L 21/469

US Classification:

430 5, 216 49, 438947

Abstract:

Complex self-assembled patterns can be created using a sparse template and local changes to the shape or distribution of the posts of the template to direct pattern generation of block copolymer. The post spacing in the template is formed commensurate with the equilibrium periodicity of the block copolymer, which controls the orientation of the linear features. Further, the posts can be arranged such that the template occupies only a few percent of the area of the final self-assembled patterns. Local aperiodic features can be introduced by changing the period or motif of the lattice or by adding guiding posts. According to one embodiment, an array of carefully spaced and shaped posts, prepared by electron-beam patterning of an inorganic resist, can be used to template complex patterns in a cylindrical-morphology block copolymer. These complex self-assembled patterns can form a mask used in fabrication processes of arbitrary structures such as interconnect layouts.

US Patent:

8415755, Apr 9, 2013

Filed:

Sep 25, 2007

Appl. No.:

11/860737

Inventors:

Fernando J. Castano - Cambridge MA, US
Caroline A. Ross - Arlington MA, US

Assignee:

Massachusetts Institute of Technology - Cambridge MA

International Classification:

H01L 29/82
H01L 21/02

US Classification:

257421, 257295, 257E29323, 257E21665, 365129, 365145

Abstract:

A magnetoresistive Wheatstone-bridge structure includes a magnetoresistive ring structure. The magnetoresistive ring structure includes a first magnetic layer comprising a ferromagnetic material. A second magnetic layer also includes a ferromagnetic material. A non-magnetic spacer is positioned between the first magnetic layer and the second magnetic layer. A vacant open region is positioned in the center region of the magnetoresistive ring structure. A plurality of magnetic states can exist in either the first magnetic layer or second magnetic layer. Furthermore, the magnetoresistive Wheatstone-bridge structure includes a plurality of voltage and current contacts arranged symmetrically upon the magnetoresistive ring structure. The magnetic state of the ring is detected by measuring its resistance.