Carolynn Boehmler

US Patent:

50471317, Sep 10, 1991

Filed:

Nov 8, 1989

Appl. No.:

7/433690

Inventors:

Jesse D. Wolfe - San Ramon CA
Carolynn Boehmler - Vacaville CA
James J. Hofmann - Northfield MN

Assignee:

The BOC Group, Inc. - Murray Hill NJ

International Classification:

C23C 1414

US Classification:

20419223

Abstract:

A method of depositing thin films of silicon based compounds, particularly silicon dioxide, by cathode reactive sputtering utilizes a rotating cylindrical magnetron driven by a d. c. potential. The result is a technique of forming a uniform film on large substrates with high deposition rates. Arcing normally associated with sputtering troublesome dielectric coatings such as silicon oxides is substantially eliminated.

US Patent:

51085747, Apr 28, 1992

Filed:

Jan 29, 1991

Appl. No.:

7/647391

Inventors:

Milan R. Kirs - Lafayette CA
Abraham I. Belkind - North Plainfield NJ
J. Randall Kurie - Livingston NJ
Zoltan Orban - Franklin Park NJ
Carolynn Boehmler - Vacaville CA

Assignee:

The BOC Group, Inc. - New Providence NJ

International Classification:

C23C 1434

US Classification:

20429822

Abstract:

A rotating cylindrical sputtering target surface as part of a magnetron has cylindrical shields adjacent each end of the target to prevent arcing that undesirably occurs when certain materials are being sputtered, particularly dielectrics. If two or more rotating targets are employed in a single magnetron system, each is similarly shielded. In a preferred form, the target is provided with a single cylindrical shield that is cut away for a significant portion of the distance around the cylinder to provide an opening through which a sputtering region of the target is accessible, while maintaining shielding of the target end regions. This preferred shield is rotatable in order to allow the position of the sputtering activity to be selected.