Chao-Yang Lu

US Patent:

20130113077, May 9, 2013

Filed:

Dec 28, 2011

Appl. No.:

13/338492

Inventors:

Agnes Neves WOO - Encino CA, US
Pascal Tran - Irvine CA, US
Akira Ito - Irvine CA, US
Chao-Yang Lu - Sunnyvale CA, US
Jung Wang - Laguna Niguel CA, US

Assignee:

Broadcom Corporation - Irvine CA

International Classification:

H01L 29/02

US Classification:

257532, 257E29002

Abstract:

Embodiments described herein provide a structure for finger capacitors, and more specifically metal-oxide-metal (“MOM”) finger capacitors and arrays of finger capacitors. A plurality of Shallow Trench Isolation (STI) formations is associated with every other column of capacitor fingers, with poly fill formations covering the STI formations to provide a more robust and efficient structure.

US Patent:

20130001574, Jan 3, 2013

Filed:

Jun 30, 2011

Appl. No.:

13/174083

Inventors:

Chao-Yang Lu - Sunnyvale CA, US
Akira Ito - Irvine CA, US

Assignee:

Broadcom Corporation - Irvine CA

International Classification:

H01L 29/78
H01L 21/28

US Classification:

257 66, 438586, 257E29255, 257E2119

Abstract:

According to embodiments of the invention, a field transistor structure is provided. The field transistor structure includes a semiconductor substrate, a metal gate, a polycrystalline silicon (polysilicon) layer, and first and second metal portions. The polysilicon layer has first, second, third, and fourth sides and is disposed between the semiconductor substrate on the first side and the metal gate on the second side. The polysilicon layer is also disposed between the first and second metal portions on the third and fourth sides. According to some embodiments of the present invention, the field transistor structure may also include a thin metal layer disposed between the polysilicon layer and the semiconductor substrate. The thin metal layer may be electronically coupled to each of the first and second metal portions.

US Patent:

20150194433, Jul 9, 2015

Filed:

Jan 8, 2014

Appl. No.:

14/150245

Inventors:

- IRVINE CA, US
CHAO-YANG LU - SUNNYVALE CA, US

Assignee:

BROADCOM CORPORATION - IRVINE CA

International Classification:

H01L 27/112
H01L 21/768
H01L 29/78
G11C 17/12

Abstract:

A field-effect transistor (FET) based one-time programmable (OTP) device is discussed. The OTP device includes a fin structure, a gate structure, a first contact region, and a second contact region. The first contact region includes an insulating region and a conductive region and is configured to be electrically isolated from the gate structure. While, the second contact region includes the conductive region and is configured to be electrically coupled to at least a portion of the gate structure. The OTP device is configured to be programmed by disintegration of the insulating region in response to a first voltage being applied to the first contact and a second voltage being applied to the second contact region simultaneously, where the second voltage is higher than the first voltage by a threshold value.