Charles D Mckenna

US Patent:

43831770, May 10, 1983

Filed:

Dec 24, 1980

Appl. No.:

6/219652

Inventors:

John H. Keller - Newburgh NY
Charles M. McKenna - Fishkill NY

Assignee:

International Business Machines Corporation - Hopewell Junction NY

International Classification:

H01J 2700

US Classification:

250423R

Abstract:

A plurality of magnetic pole pieces are arranged around the external wall of a high temperature plasma confining structure. The pole pieces are positioned between permanent magnets spaced from one another and the confining structure by distances calculated to produce a minimum field toward the center of the structure with an effective containing field around the periphery of the structure. The magnets and the pole pieces are cooled. An odd number of poles are employed such that the missing pole appears as a virtual pole at the extraction slit used for forming an ion beam for ion implantation. The resulting small package multipole plasma containment functions to provide higher beam current, longer source lifetime, higher voltage stability and reduces maintenance and cleaning operations, with the permanent magnets protected from high temperature and corrosive gases.

US Patent:

41514203, Apr 24, 1979

Filed:

Dec 8, 1977

Appl. No.:

5/858486

Inventors:

John H. Keller - Newburgh NY
Charles M. McKenna - Fishkill NY
James R. Winnard - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

A61K 2702

US Classification:

250492A

Abstract:

An apparatus for depositing a monocrystalline epitaxial layer of semiconductor material, e. g. , silicon containing selected conductivity-determining impurities, on a semiconductor substrate comprising directing a beam of ions of said semiconductor material at the surface of the semiconductor substrate at an energy level below 0. 5 Kev. , and simultaneously directing a beam of the conductivity-determining impurity ions at at least a portion of the substrate surface whereby a layer of semiconductor material containing said conductivity-determining impurities is formed on said surface, and heating said layer to a temperature of at least 550. degree. C. to render said layer monocrystalline. The beams of semiconductor ions and of conductivity-determining impurity ions are preferably maintained at a high current density of at least 1 ma/cm. sup. 2 at the surface of said semiconductor substrate even with a preferable relatively broad beam having diameters of up to 15 cm.

US Patent:

41837800, Jan 15, 1980

Filed:

Aug 21, 1978

Appl. No.:

5/934733

Inventors:

Charles M. McKenna - Fishkill NY
H. Keith Willcox - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21306
C03C 1500
C03C 2506

US Classification:

156643

Abstract:

A method and apparatus for modifying a surface, by either plasma etching the surface or plasma depositing a material thereon, by using vacuum ultraviolet radiation to control the modification of the surface.

US Patent:

41793129, Dec 18, 1979

Filed:

Nov 20, 1978

Appl. No.:

5/962442

Inventors:

John H. Keller - Newburgh NY
Charles M. McKenna - Fishkill NY
James R. Winnard - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21203
H01L 21263

US Classification:

148 15

Abstract:

A method and apparatus for depositing a monocrystalline epitaxial layer of semiconductor material, e. g. , silicon containing selected conductivity-determining impurities, on a semiconductor substrate comprising directing a beam of ions of said semiconductor material at the surface of the semiconductor substrate at an energy level below 0. 5 Kev. , and simultaneously directing a beam of the conductivity-determining impurity ions at at least a portion of the substrate surface whereby a layer of semiconductor material containing said conductivity-determining impurities is formed on said surface, and heating said layer to a temperature of at least 550. degree. C. to render said layer monocrystalline. The beams of semiconductor ions and of conductivity-determining impurity ions are preferably maintained at a high current density of at least 1 ma/cm. sup. 2 at the surface of said semiconductor substrate even with a preferable relatively broad beam having diameters of up to 15 cm.

US Patent:

41585895, Jun 19, 1979

Filed:

Dec 30, 1977

Appl. No.:

5/865811

Inventors:

John H. Keller - Newburgh NY
Charles M. McKenna - Fishkill NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B01K 100
C23F 102

US Classification:

156345

Abstract:

Process and apparatus for use in extracting negative ions from a plasma which is particularly useful in reactive ion etching of metals, silicon and oxides and nitrides of silicon in the manufacture of semiconductor devices. A magnetic field is employed in the apparatus and, herein, is created by a novel grid, through which negative ions pass to a surface, such as one to be etched, while free electrons are prevented from passing through the grid and out of the plasma. The novel process utilizes negative ions which have a large fraction in the atomic state.

US Patent:

41350979, Jan 16, 1979

Filed:

May 5, 1977

Appl. No.:

5/794276

Inventors:

John L. Forneris - Lagrangeville NY
William W. Hicks - Wappingers Falls NY
John H. Keller - Newburgh NY
Charles M. McKenna - Fishkill NY
James A. Seirmarco - Buchanan NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

A61K 2702

US Classification:

250492B

Abstract:

In an ion beam apparatus a structure for controlling the surface potential of the target comprising an electron source adjacent to the beam for providing electrons to the beam and means between the target and source for inhibiting rectilinear radiations, i. e. , electron and other particle and photon radiations between said source and said target. This prevents heating of the target by the electron source and cross-contamination between the source and the target. A further structure is provided for the measurement of the ion beam current while controlling said surface potential of the target which includes: walls adjacent to and electrically insulated from the target and surrounding the beam whereby the walls and target provide a Faraday Cage, means for introducing variable quantities of electrons into the beam within the Faraday Cage, means for measuring the target current, means for combining and measuring the target and wall currents to provide said ion beam current measurement and means for varying the quantities of introduced electrons to control the target current and thereby the target surface potential.

US Patent:

41186303, Oct 3, 1978

Filed:

May 5, 1977

Appl. No.:

5/794275

Inventors:

Charles M. McKenna - Fishkill NY
Wolfgang F. Mueller - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01J 3700

US Classification:

250492A

Abstract:

In an ion beam apparatus a structure for controlling the surface potential of the target comprising an electron source adjacent to the beam for providing electrons to the beam and means between the target and source for inhibiting rectilinear radiations, i. e. , electron and other particle and photon radiations between said source and said target. This prevents heating of the target by the electron source and cross-contamination between the source and the target. The apparatus further includes means for maintaining said shield means at a lower temperature than said target. A further structure is provided for the measurement of the ion beam current while controlling said surface potential of the target which includes: walls adjacent to and electrically insulated from the target and surrounding the beam whereby the walls and target provide a Faraday Cage, means for introducing variable quantities of electrons into the beam within the Faraday Cage, means for measuring the target current, means for combining and measuring the target and wall currents to provide said ion beam current measurement and means for varying the quantities of introduced electrons to control the target current and thereby the target surface potential. Likewise, this apparatus further includes means for maintaining said shielding means at a temperature lower than said target.