Charles A Pearce

US Patent:

8288820, Oct 16, 2012

Filed:

Jun 15, 2010

Appl. No.:

12/815766

Inventors:

Christopher Boguslaw Kocon - Mountain Top PA, US
John Manning Savidge Neilson - Norristown PA, US
Simon John Molloy - Allentown PA, US
Haian Lin - Bethlehem PA, US
Charles Walter Pearce - Emmaus PA, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 29/66
H01L 21/336
H01L 25/00

US Classification:

257336, 257E29255, 438286, 327564

Abstract:

A high performance, power integrated circuit composed of two charge balanced, extended drain NMOS transistors (CBDEMOS) formed on an n-substrate. A CBDENMOS transistor with an n-type substrate source. A charge balanced channel diode (CBCD) with an n-type substrate. A process for forming a high performance, power integrated circuit composed of two CBDENMOS transistors formed on an n-substrate. A process for forming a power integrated circuit composed of one CBDENMOS transistor and one CBCD on an n-type substrate.

US Patent:

8294210, Oct 23, 2012

Filed:

Jun 15, 2010

Appl. No.:

12/815877

Inventors:

Christopher Boguslaw Kocon - Mountain Top PA, US
John Manning Savidge Neilson - Norristown PA, US
Simon John Molloy - Allentown PA, US
Haian Lin - Bethlehem PA, US
Charles Walter Pearce - Emmaus PA, US
Gary Eugene Daum - Orwigsburg PA, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 29/66
H01L 21/336

US Classification:

257337, 257E29255, 257E29327, 257E21352, 257E21409, 438268

Abstract:

A channel diode structure having a drift region and method of forming. A charge balanced channel diode structure having an electrode shield and method of forming.