Charles R Turner

age ~76

from Boise, ID

Also known as:
  • Charles Roy Turner
  • Chuck R Turner
  • Corey Turner
  • Katherine Turner
Phone and address:
5124 Grover St, Boise, ID 83705
2083430331

Charles Turner Phones & Addresses

  • 5124 Grover St, Boise, ID 83705 • 2083430331
  • Lowman, ID
  • Meridian, ID

Education

  • School / High School:
    Indiana University School of Law

Ranks

  • Licence:
    New York - Currently registered
  • Date:
    1986

Lawyers & Attorneys

Charles Turner Photo 1

Charles Ignatius Turner - Lawyer

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Licenses:
New York - Currently registered 1986
Education:
Indiana University School of Law
Charles Turner Photo 2

Charles Turner - Lawyer

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ISLN:
1001251680
Admitted:
2022
Charles Turner Photo 3

Charles Turner - Lawyer

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Office:
Alltel Information Services, Inc.
Specialties:
Corporate Law
Intellectual Property
Contracts
ISLN:
913414208
Admitted:
1998
University:
Hendrix College, B.A., 1991
Law School:
University of Arkansas at Little Rock, J.D., 1997
Charles Turner Photo 4

Charles Turner - Lawyer

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Office:
Linklaters
ISLN:
921565787
Charles Turner Photo 5

Charles Turner - Lawyer

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Specialties:
Employment Discrimination
ISLN:
914125134
Admitted:
1997
University:
Temple University, B.A., 1994
Law School:
Temple University School of Law, J.D., 1997
Charles Turner Photo 6

Charles Turner - Lawyer

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ISLN:
903042688
Admitted:
1967
University:
St. Lawrence University, B.A., 1962
Law School:
Georgetown University, J.D., 1967
Name / Title
Company / Classification
Phones & Addresses
Charles Jason Turner
Director
The Bobby and Susan Albert Foundation
Charles Turner
Director
Monster Recovery Inc
Charles H Turner
Treasurer
PIER 1 IMPORTS (U.S.), INC
Charles R. Turner
HITZ 4U LLC
Charles Turner
CENTRAL OIL LLC
Charles Turner
RELY-ASSIST, LLC
Charles K Turner
CHUCK'S CARPET AND FURNITURE CLEANING LLC
Charles K Turner
TURNER REAL ESTATE INVESTMENTS LLC

Real Estate Brokers

Charles Turner Photo 7

Charles Turner, The Plains, VA

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Specialties:
Buyer's Agent
Listing Agent
Work:
The Plains Real Estate
Box K
5402700707 (Office)
Charles Turner Photo 8

Charles Turner, Sanfrancisco, CA

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Specialties:
Buyer's Agent
Listing Agent
Work:
Glenn Realty
1851 Divisadero
4156064135 (Office)

License Records

Charles Turner

License #:
E-7667 - Expired
Category:
Engineering Intern

Charles Robert Turner

License #:
2705104222
Category:
Contractor

Charles J Turner

License #:
25022 - Active
Category:
Tow Truck Operator (Incident Management)
Expiration Date:
Nov 5, 2017

Charles B. Turner

License #:
3849 - Expired
Category:
Architect
Issued Date:
Aug 7, 1969
Expiration Date:
Aug 31, 2015
Organization:
Firm Not Published

Charles B. Turner

License #:
6058 - Expired
Issued Date:
Mar 19, 1993
Expiration Date:
Jun 1, 2006
Organization:
Firm Not Published

Charles A Turner

License #:
AB019965A - Expired
Category:
Real Estate Commission
Type:
Associate Broker (AB)-Standard

Medicine Doctors

Charles Turner Photo 9

Charles A. Turner

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Specialties:
Internal Medicine
Work:
TJ Samson Health Partners Internal Medicine
312 N L Rogers Wl Blvd, Glasgow, KY 42141
2706595870 (phone), 2706595851 (fax)
Education:
Medical School
University of Kentucky College of Medicine
Graduated: 2005
Procedures:
Allergen Immunotherapy
Destruction of Benign/Premalignant Skin Lesions
Electrocardiogram (EKG or ECG)
Skin Tags Removal
Vaccine Administration
Conditions:
Abdominal Hernia
Acne
Acute Bronchitis
Acute Otitis Externa
Acute Pharyngitis
Languages:
English
Description:
Dr. Turner graduated from the University of Kentucky College of Medicine in 2005. He works in Glasgow, KY and specializes in Internal Medicine. Dr. Turner is affiliated with TJ Samson Community Hospital.

Wikipedia

Charles Turner (Cricketer)

Charles Turner (cricketer)

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Charles Thomas Biass Turner was a bowler who is regarded as one of the finest ever produced by Australia.

Charles Turner (musician)

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Charles Turner was an American jazz trumpeter. Turner performed with Frank Sinatra for eight years, Ella Fitzgerald, Jimmy Dorsey, Ralph Flanagan, Harry James, Charlie Spivak, Count Basie and many other great musicians of the...

Us Patents

  • Depletion Compensated Polysilicon Electrodes

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  • US Patent:
    6506645, Jan 14, 2003
  • Filed:
    Oct 15, 2001
  • Appl. No.:
    09/978137
  • Inventors:
    Ravi Iyer - Boise ID
    Luan Tran - Meridian ID
    Charles L. Turner - Tempe AZ
  • Assignee:
    Micron Technology, Inc. - Boise ID
  • International Classification:
    H01L 31062
  • US Classification:
    438253, 438255, 438256
  • Abstract:
    A capacitor in a semiconductor integrated circuit is fabricated having a fixed charge density introduced near an electrode/dielectric interface. The fixed charge density compensates for the effects of a depletion layer, which would otherwise lower the effective capacitance. By shifting the undesirable effect of the depletion capacitance outside of the operating voltage range, the capacitor is effectively converted to an accumulation mode. The fixed charge density is preferably introduced by a plasma nitridation process performed prior to formnation of the capacitor dielectric.
  • Method Of Increasing Capacitance Of Polycrystalline Silicon Devices By Surface Roughening And Polycrystalline Silicon Devices

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  • US Patent:
    52084795, May 4, 1993
  • Filed:
    May 15, 1992
  • Appl. No.:
    7/883186
  • Inventors:
    Viju Mathews - Boise ID
    Charles Turner - Boise ID
  • Assignee:
    Micron Technology, Inc. - Boise ID
  • International Classification:
    H01L 2702
    H01L 21203
  • US Classification:
    257534
  • Abstract:
    A method of forming an electrically conductive polysilicon capacitor plate on a semiconductor substrate includes: a) providing a first layer of conductively doped polysilicon atop a semiconductor substrate to a first selected thickness; b) providing a thin layer of oxide atop the first polysilicon layer to a thickness of from about 2 Angstroms to about 30 Angstroms, the thin oxide layer having an outwardly exposed surface; and c) providing a second layer of conductively doped polysilicon having an outer exposed surface over the outwardly exposed thin oxide surface, the first polysilicon layer being electrically conductive with the second polysilicon layer through the thin layer of oxide, the second polysilicon layer having a second thickness from about 500 Angstroms to about 700 Angstroms, the thin oxide layer reducing silicon atom mobility during polysilicon deposition to induce roughness into the outer exposed polysilicon surface. Preferably, the polysilicon deposition, doping, oxide growth, and subsequent polysilicon deposition is all conducted in a single furnace sequence without removing the wafers from the furnace. Such facilitates throughput, and minimizes exposure of the wafer to handling which could lead to fatal damage.
  • Semiconductor Processing Method For Providing Large Grain Polysilicon Films

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  • US Patent:
    54911079, Feb 13, 1996
  • Filed:
    Apr 21, 1995
  • Appl. No.:
    8/426639
  • Inventors:
    Charles L. Turner - Boise ID
    Monte Manning - Boise ID
  • Assignee:
    Micron Technology, Inc. - Boise ID
  • International Classification:
    H01L 2122
  • US Classification:
    437162
  • Abstract:
    A semiconductor processing method of providing a polysilicon layer atop a semiconductor wafer comprises the following sequential steps: a) depositing a first layer of arsenic atop a semiconductor wafer; b) depositing a second layer of silicon over the arsenic layer, the second layer having an outer surface; c) first annealing the wafer at a temperature of at least about 600. degree. C. for a time period sufficient to impart growth of polycrystalline silicon grains in the second layer and providing a predominately polysilicon second layer, the first annealing step imparting diffusion of arsenic within the second layer to promote growth of large polysilicon grains; and d) with the second layer outer surface being outwardly exposed, second annealing the wafer at a temperature effectively higher than the first annealing temperature for a time period sufficient to outgas arsenic from the polysilicon layer. As an alternate consideration, the layer of silicon could be in situ provided with an effective quantity of As during deposition.
  • Method For Depositing Low Bulk Resistivity Doped Films

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  • US Patent:
    53326890, Jul 26, 1994
  • Filed:
    Feb 17, 1993
  • Appl. No.:
    8/018632
  • Inventors:
    Gurtej S. Sandhu - Boise ID
    Charles L. Turner - Boise ID
  • Assignee:
    Micron Technology, Inc. - Boise ID
  • International Classification:
    H01L 2170
  • US Classification:
    437109
  • Abstract:
    An LPCVD deposition process for depositing doped thin films on a substrate is provided. The process may be performed in a LPCVD reaction chamber at elevated temperatures and reduced pressures. The process is especially suited to the deposition and doping of chemically incompatible deposition species and dopants such as polysilicon and arsenic. A deposition gas (e. g. silane) and a dopant gas (e. g. arsine) are thermally decomposed in the reaction chamber. During the deposition process the gas flows are pulsed relative to one another in some manner. This pulsed gas flows form a multi-layer stack which includes alternating deposition layers and doping layers. The dopants in the doping layer are then diffused during a subsequent annealing step (or during subsequent processing) into the deposition layers to form a uniformly doped thin film.
  • Depletion Compensated Polysilicon Electrodes

    view source
  • US Patent:
    63335360, Dec 25, 2001
  • Filed:
    Oct 31, 2000
  • Appl. No.:
    9/702584
  • Inventors:
    Ravi Iyer - Boise ID
    Luan Tran - Meridian ID
    Charles L. Turner - Tempe AZ
  • Assignee:
    Micron Technology, Inc. - Boise ID
  • International Classification:
    H01L 27108
  • US Classification:
    257306
  • Abstract:
    A capacitor in a semiconductor integrated circuit is fabricated having a fixed charge density introduced near an electrode/dielectric interface. The fixed charge density compensates for the effects of a depletion layer, which would otherwise lower the effective capacitance. By shifting the undesirable effect of the depletion capacitance outside of the operating voltage range, the capacitor is effectively converted to an accumulation mode. The fixed charge density is preferably introduced by a plasma nitridation process performed prior to formation of the capacitor dielectric.
  • Method Of Forming A Capacitor

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  • US Patent:
    57535582, May 19, 1998
  • Filed:
    Apr 18, 1997
  • Appl. No.:
    8/844384
  • Inventors:
    Salman Akram - Boise ID
    Charles Turner - Chandler AZ
    Alan Laulusa - Boise ID
  • Assignee:
    Micron Technology, Inc. - Boise ID
  • International Classification:
    H01L 2120
  • US Classification:
    438386
  • Abstract:
    A method of forming a capacitor includes, a) providing a substrate; b) etching into the substrate to provide a depression in the substrate, the depression having a sidewall which is angled from vertical; c) providing a conformal layer of hemispherical grain polysilicon within the depression and over the angled sidewall, the layer of hemispherical grain polysilicon less than completely filling the depression; and d) ion implanting the hemispherical grain polysilicon layer with a conductivity enhancing impurity. Preferred methods of providing the depression where the substrate comprises SiO. sub. 2 include a dry, plasma enhanced, anisotropic spacer etch utilizing reactant gases of CF. sub. 4 and CHF. sub. 3 provided to the substrate at a volumetric ratio of 1:1, and facet sputter etching.
  • Method For Uniformly Doping Hemispherical Grain Polycrystalline Silicon

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  • US Patent:
    58858695, Mar 23, 1999
  • Filed:
    Sep 14, 1995
  • Appl. No.:
    8/528183
  • Inventors:
    Charles Turner - Boise ID
    Randhir P. S. Thakur - Boise ID
  • Assignee:
    Micron Technology, Inc. - Boise ID
  • International Classification:
    H01L 2120
  • US Classification:
    438261
  • Abstract:
    A method is disclosed for uniformly doping HSG polycrystalline silicon independent of the other layers of the semiconductor substrate. A semiconductor substrate having a silicon dioxide layer formed superjacent a polysilicon layer is provided in a chamber. A doped rough silicon layer is formed in situ superjacent the silicon dioxide layer. This is accomplished by depositing the silicon layer superjacent the silicon dioxide layer and exposing the silicon layer to a source gas, a dopant gas, and energy, preferably in situ to thereby form uniformly doped silicon layer and roughened polysilicon layer using rapid thermal chemical vapor deposition techniques or low pressure chemical vapor deposition. Alternatively, a uniformly doped roughened polysilicon layer is formed superjacent the silicon dioxide layer in situ. This formation is achieved by depositing an amorphous silicon layer superjacent the silicon dioxide layer and roughening the amorphous silicon layer in situ.
  • Depletion Compensated Polysilicon Electrodes

    view source
  • US Patent:
    59172134, Jun 29, 1999
  • Filed:
    Aug 21, 1997
  • Appl. No.:
    8/916024
  • Inventors:
    Ravi Iyer - Boise ID
    Luan Tran - Meridian ID
    Charles L. Turner - Tempe AZ
  • Assignee:
    Micron Technology, Inc. - Boise ID
  • International Classification:
    H01L 27108
  • US Classification:
    257309
  • Abstract:
    A capacitor in a semiconductor integrated circuit is fabricated having a fixed charge density introduced near an electrode/dielectric interface. The fixed charge density compensates for the effects of a depletion layer, which would otherwise lower the effective capacitance. By shifting the undesirable effect of the depletion capacitance outside of the operating voltage range, the capacitor is effectively converted to an accumulation mode. The fixed charge density is preferably introduced by a plasma nitridation process performed prior to formation of the capacitor dielectric.

Isbn (Books And Publications)

The Turtle and the Moon

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Author
Charles Turner

ISBN #
0140558128

The Feast: Reflections on the Bread of Life

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Author
Charles Turner

ISBN #
0060666897

The Shape of the New Europe

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Author
Charles Turner

ISBN #
0521601088

The Shape of the New Europe

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Author
Charles Turner

ISBN #
0521841283

The Turtle and the Moon

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Author
Charles Turner

ISBN #
0525446591

Sometimes It Causes Me to Tremble

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Author
Charles Turner

ISBN #
0745938671

Social Theory after the Holocaust

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Author
Charles Turner

ISBN #
0853239657

Social Theory after the Holocaust

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Author
Charles Turner

ISBN #
0853239754

Googleplus

Charles Turner Photo 10

Charles Turner

Work:
The Halfway House - Dishwasher (2010-2010)
Education:
High Ham Primary School - SATS, Hazlegrove - Stuff, King's College Taunton - GCSE's
About:
I live in Somerset and I blade. Chyeaaaa
Tagline:
I rollerblade
Bragging Rights:
I'm me.
Charles Turner Photo 11

Charles Turner

Work:
Securitas AB - Security Guard (1)
Morgan Stanley - Security Guard (1)
Niketown New York - Stock Associate (9)
Education:
Baruch College, Saint Raymond's HS for Boys - High School
Tagline:
Wave Master
Charles Turner Photo 12

Charles Turner

Work:
True Colors Laundry - Truck Driver (9)
Muslim Chaplain Service of Virginia - Secretary (5)
IQRA Academy - Teacher (7)
Education:
Virginia Commonwealth University - Political Science
Charles Turner Photo 13

Charles Turner

Work:
Kaiser Permanente - AV Engineer (2010)
Education:
Citrus College - Recording Technology
Relationship:
Single
Charles Turner Photo 14

Charles Turner

Education:
Martin Luther King High School - Business Law
Relationship:
Married
Charles Turner Photo 15

Charles Turner

Work:
Charles Turner - Photography (2008)
Tagline:
Life is for Living...
Charles Turner Photo 16

Charles Turner

Education:
New Jersey Institute of Technology - Electrical Engineering
About:
Starcraft? Reddit? Electronic music? Yup. That's me!
Charles Turner Photo 17

Charles Turner

Classmates

Charles Turner Photo 18

Charles Turner

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Schools:
Switzerland County High School Vevay IN 2000-2004
Community:
John Weaver
Charles Turner Photo 19

Charles Turner

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Schools:
Warner Robins Junior High School Warner Robins GA 1974-1978
Community:
Sandi Carnot, Bruce Wood
Charles Turner Photo 20

Charles Turner

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Schools:
Indiana Christian Academy Anderson IN 1989-1993
Community:
Angela Alexander, Scott Camp, Mary Closser
Charles Turner Photo 21

Charles Turner

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Schools:
Portland Junior High School Portland IN 1959-1962, North Webster High School North Webster IN 1961-1965
Community:
Mike Mcclure, Susan Shoemaker, Margaret Shoemaker
Charles Turner Photo 22

Charles Turner

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Schools:
Southaven High School Southaven MS 1986-1990
Community:
Les Hooper
Charles Turner Photo 23

Charles Turner

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Schools:
Dudley M. Hughes High School Macon GA 1964-1968
Community:
Bennie Britt, Raymond Kemp, Joanne Kemp, Tony Japuntich, Kenneth Hagood
Charles Turner Photo 24

Charles Turner

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Schools:
Pensacola Technical High School Pensacola FL 1965-1969
Community:
Iris Sollie, Ron Jetton, Winnie Bobe, Bob Wiggins, Isaac Gilmore
Charles Turner Photo 25

Charles Turner

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Schools:
Baltimore Polytechnic Institute 403 Baltimore MD 1971-1975
Community:
Bernard Dobrzykowski, Arthur Demoine

News

What The First Wave Of Roster Cuts Means For The Patriots

What the first wave of roster cuts means for the Patriots

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  • Running back Deshaun Fenwick, wide receiver Kawaan Baker, tight ends LaMichael Pettway and Jacob Warren, offensive linemen Zuri Henry and Charles Turner III, defensive linemen Sam Roberts, Josiah Bronson, William Bradley-King and Christian McCarroll, linebacker Steele Chambers, cornerbacks Azizi Hesigning bonuses fall into that category. In the case of four undrafted rookie, the Patriots might also absorb some previously-guaranteed salaries: TE Jacob Warren ($25,000), OT Zuri Henry ($25,000), OL Charles Turner III ($100,000) and LB Steele Chambers ($75,000) all have partially-guaranteed deals.
  • Date: Aug 27, 2024
  • Category: Sports
  • Source: Google
2022 Sixth-Round Pick Sam Roberts Among 14 Patriots Cuts

2022 sixth-round pick Sam Roberts among 14 Patriots cuts

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  • ucker Addington, wide receiver Kawaan Baker, defensive end William Bradley-King, defensive tackle Josiah Bronson, linebacker Steele Chambers, running back Deshaun Fenwick, cornerback Azizi Hearn, tackle Zuri Henry, defensive end Christian McCarroll, tight end LaMichael Pettway, center Charles Turner,
  • Date: Aug 26, 2024
  • Category: Sports
  • Source: Google
Patriots Announce Additional 6 Departures On Eve Of Nfl’s Cutdown Deadline

Patriots announce additional 6 departures on eve of NFL’s cutdown deadline

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  • The wave of previously unreported departures would include tight end Jacob Warren, center Charles Turner, offensive tackle Zuri Henry, defensive tackle Josiah Bronson, outside linebacker Christian McCarroll and cornerback Mikey Victor.
  • Date: Aug 26, 2024
  • Category: Sports
  • Source: Google
Lawsuit: Indiana Police Used Excessive Force In Traffic Stop

Lawsuit: Indiana Police Used Excessive Force in Traffic Stop

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  • According to the station, Mahone says she admitted not wearing a seat belt and asked to be given a ticket right away so she could get to the hospital to see her dying mother. Instead, she says, Hammond officers Patrick Vicari and Charles Turner demanded to see Jones' identification.
  • Date: Oct 07, 2014
  • Category: U.S.
  • Source: Google
Federal Lawsuit Accuses Hammond Police Of Excessive Force On Traffic Stop

Federal lawsuit accuses Hammond police of excessive force on traffic stop

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  • The officers, Patrick Vicari and Charles Turner, asked Mahone, who was driving, for her drivers license and told her she was being stopped for a seat-belt violation. Mahone complied, but the lawsuit says the officers then asked for Jones identification. When he said he didnt have any on him, they
  • Date: Oct 07, 2014
  • Category: U.S.
  • Source: Google
Video Shows Hammond Police Accused Of Excessive Force

Video shows Hammond police accused of excessive force

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  • Jamal Jones accuses police officers Patrick Vicari and Charles Turner of excessive force, false arrest, assault and battery and intentional infliction of emotional distress, according to a complaint filed Monday in the U.S. District Court for the Northern District of Indiana.
  • Date: Oct 07, 2014
  • Category: U.S.
  • Source: Google

Pair Alleging Excessive Force by Police During Traffic Stop 'in State of Shock'

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  • Mahone and Jones allege in their complaint that Officers Patrick Vicari and Charles Turner were "highly aggressive" during the traffic stop. They said the officers requested Mahone's identification but also Jones'. Because he did not have a driver's license, according to the complaint, Jones offered
  • Date: Oct 07, 2014
  • Source: Google
The Trip To Bountiful: Theater Review

The Trip to Bountiful: Theater Review

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  • Cast: Cicely Tyson, Cuba Gooding Jr., Vanessa Williams, Condola Rashad, Tom Wopat, Devon Abner, Curtis Billings, Arthur French, Pat Bowie, Leon Addison Brown, Susan Heyward, Linda Powell, Charles Turner
  • Date: Apr 23, 2013
  • Category: Entertainment
  • Source: Google

Facebook

Charles Turner Photo 26

Charles Matthew Turner

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Charles Turner Photo 27

Charles NawdatsChuck Turner

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Charles Turner Photo 28

Charles Djbignikz Turner

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Charles Turner Photo 29

Charles Frederick Turner

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Charles Turner Photo 30

Charles William Turner

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Charles Turner Photo 31

Charles Matthew Turner

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Charles Turner Photo 32

Charles Nawlins Turner

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Charles Turner Photo 33

Charles Patrick Turner

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Plaxo

Charles Turner Photo 34

Charles Turner

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Atlanta, GAFacilities at Inovis
Charles Turner Photo 35

Charles Turner

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Charles Turner Photo 36

Charles Turner

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CSR at Southern Company

Youtube

Bugs Aren't Brainless! | Great Minds: Charles...

At the turn of the 20th century, scientists thought that insects were ...

  • Duration:
    6m 42s

18-Year-Old Tried An Elaborate Scheme To Scam...

Two teenagers in Missouri said Friday they believe they are among the ...

  • Duration:
    4m

Prepare America! - Pastor Charles Turner III ...

Pastor Turner shares a dream that the Lord gave him regarding the stat...

  • Duration:
    21m 21s

Charles Turner & Uptown Swing NPR Tiny Desk C...

NPR Tiny Desk Submission Charles Turner - Vocals Christopher McBride -...

  • Duration:
    5m 50s

Teen cooked up elaborate schemes to steal his...

18-year-old Charles Turner was arrested for trying to defraud the stat...

  • Duration:
    2m 13s

Hallelujah I Love Her So with Charles Turner

Gordon Webster Band, Kind of A Big Deal Weekend, Boston Swing Central,...

  • Duration:
    5m 25s

Myspace

Charles Turner Photo 37

Charles Turner

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Locality:
lawndale / So. Bay, California
Gender:
Male
Birthday:
1934
Charles Turner Photo 38

Charles Turner

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Locality:
RISING SUN, Indiana
Gender:
Male
Birthday:
1944
Charles Turner Photo 39

Charles Turner

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Locality:
Mountlake Terrace, Washington
Gender:
Male
Birthday:
1946
Charles Turner Photo 40

Charles Turner

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Locality:
No I am not, Where I belong
Gender:
Male
Birthday:
1944
Charles Turner Photo 41

charles turner

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Locality:
757, Virginia
Gender:
Male
Birthday:
1947
Charles Turner Photo 42

Charles Turner

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Charles Turner Photo 43

Charles Turner

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Locality:
Port Saint Lucie, Florida
Gender:
Male
Birthday:
1940

Flickr


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